Browsing by Author "Lin, Hsin-Yi"

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Low-Frequency Noise Characterization of AlGaN & x002F;GaN HEMTs and MIS-HEMTs Under UV Illumination
(2020-01-01)
Nagarajan, Venkatesan
;
Chen, Kun-Ming
;
Lin, Hsin-Yi
;
Hu, Hsin-Hui
;
Huang, Guo-Wei
The low-frequency noise characteristics of AlGaN & x002F;GaN HEMTs and MIS-HEMTs are investigated in the dark condition and under UV illumination. The test devices with a 3-& x03BC;m-thick GaN buffer and a 25-nm-thick Al_0.22Ga_0.78N barrier layer were fabricated on the silicon wafer. For MIS-HEMTs, a 25-nm-thick SiN layer was deposited as a gate dielectric. The measured low-frequency noises show a 1 & x002F;f spectrum and can be described by the carrier number fluctuation model. Different noise responses to the UV light between HEMTs and MIS-HEMTs were observed. By comparing the noise data in dark and under UV illumination, the noise sources under the gate and in the ungated gate-drain access region have been identified. From these results, we can find a design guideline to improve the noise and reliability of GaN-based devices for optoelectronic applications.