Browsing by Author "Lin, Huan-Min"

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Superior bipolar resistive switching characteristics of Cu-TiO2 based RRAM cells
(2014)
Huang, Yu-Chih
;
Lin, Huan-Min
;
Cheng, Huang-Chung
;
電機學院
;
電子工程學系及電子研究所
Resistive random access memory (RRAM) cells with Cu-doped TiO2 film between two Pt inert electrodes are produced in this work, and these achieve a lower required programming voltage of -0.7 V and higher endurance of about 1000 cycles at the programming/erasing voltage of -5 V/+ 3 V for the pulse width of 1 mu s, compared with the conventional Pt/TiO2/Cu ones. It is conjectured that the distribution of Cu sources in the Cu-doped TiO2 (TiO2 : Cu) resistive switching film facilitates the formation of sharp and narrow conductive filaments, attributed to the Cu sources near the negative biased Pt electrode were oxidised more easily to become the Cu cations than those in other regions. The proposed Pt/TiO2 : Cu/Pt sample can thus achieve a lower DC programming voltage than the conventional one. Moreover, it is conjectured that the better endurance of the Pt/TiO2 : Cu/Pt sample is due to the lower amount of residual Cu atoms in the TiO2 layer from the ruptured filaments during the erasing process. This is because the increase in the amount of Cu atoms is limited by the inert Pt electrode when there are uniformly distributed Cu sources and there is no Cu electrode.
Superior Resistive Switching Characteristics of Cu-TiO2 Based RRAM Cell
(2013)
Huang, Yu-Chih
;
Lin, Huan-Min
;
Cheng, Huang-Chung
;
電機學院
;
電子工程學系及電子研究所
The random access memory (RRAM) cells consisted with the Cu doped TiO2 film and both Pt inert electrodes has been purposed. Compared with the common conductive-bridging mode sample structure which have a Cu active electrode, a non-doped TiO2 film and a Pt inert electrode. "The Cu doped film with both inert electrodes sample exhibited the endurance of 1000 cycles more than the common ones of 400 cycles under the same operating conditions. Furthermore, the doped sample required lower setting voltage of -0.7V than the common ones of -1.5V. The differences in resistance resistive switching characteristics were possible caused by the amounts of Cu ions distribution and the forming of the conductive filaments in the TiO2 layers, according the results of the electrical characteristics measurements and the material analysis.