Browsing by Author "Lin, Huang-Kai"
Now showing 1 - 16 of 16
- Results Per Page
- Sort Options
Item type:Item, (110)-Exposed Gold Nanocoral Electrode as Low Onset Potential Selective Glucose Sensor(2010-10-01) ;Cheng, Ta-Ming ;Huang, Ting-Kai ;Lin, Huang-Kai ;Tung, Sze-PingChen, Yu-LiangA straightforward electrochemical deposition process was developed to grow gold nanostructures, including nanocoral, nanothorn, branched belt, and nanoparticle, on carbon electrodes by reducing HAuCl(4) under constant potentials in mixtures containing CTAC and/or NaNO(3). Among the nanostructures, the quasi-one-dimensional nanocoral electrode showed the highest surface area. Because of this, it provided excellent electrochemical performances in cyclic voltammetric (CV) studies for kinetic-controlled enzyme-free glucose oxidation reactions. In amperometric studies carried out at 0.200 V in PBS (pH 7.40, 0.100 M), the nanocoral electrode showed the highest anodic current response. It also offered the greatest sensitivity, 22.6 mu AmM(-1)cm(-2), an extended linear range, 5.00 x 10(-2) mM to 3.00 x 10(1) mM, and a low detection limit, 1.00 x 10(1) mu m among the electrodes investigated in this study. In addition, the glucose oxidation by the nanocoral electrode started at -0.280 V. more negative than the one of using a commercial Au electrode as the working electrode. This is attributed to the presence of exposed Au (110) surfaces on the electrode. The feature was applied to oxidize glucose selectively in the presence of ascorbic acid (AA) and uric acid (UA), common interferences found in physiological analytes. With an applied voltage at -0.100 V. the AA oxidation (started at -0.080 V) can be avoided while the glucose oxidation still provides a significant response.Item type:Item, (110)-Exposed Gold Nanocoral Electrode as Low Onset Potential Selective Glucose Sensor(2010-10-01) ;Cheng, Ta-Ming ;Huang, Ting-Kai ;Lin, Huang-Kai ;Tung, Sze-PingChen, Yu-LiangA straightforward electrochemical deposition process was developed to grow gold nanostructures, including nanocoral, nanothorn, branched belt, and nanoparticle, on carbon electrodes by reducing HAuCl(4) under constant potentials in mixtures containing CTAC and/or NaNO(3). Among the nanostructures, the quasi-one-dimensional nanocoral electrode showed the highest surface area. Because of this, it provided excellent electrochemical performances in cyclic voltammetric (CV) studies for kinetic-controlled enzyme-free glucose oxidation reactions. In amperometric studies carried out at 0.200 V in PBS (pH 7.40, 0.100 M), the nanocoral electrode showed the highest anodic current response. It also offered the greatest sensitivity, 22.6 mu AmM(-1)cm(-2), an extended linear range, 5.00 x 10(-2) mM to 3.00 x 10(1) mM, and a low detection limit, 1.00 x 10(1) mu m among the electrodes investigated in this study. In addition, the glucose oxidation by the nanocoral electrode started at -0.280 V. more negative than the one of using a commercial Au electrode as the working electrode. This is attributed to the presence of exposed Au (110) surfaces on the electrode. The feature was applied to oxidize glucose selectively in the presence of ascorbic acid (AA) and uric acid (UA), common interferences found in physiological analytes. With an applied voltage at -0.100 V. the AA oxidation (started at -0.080 V) can be avoided while the glucose oxidation still provides a significant response.Item type:Item, Chemical Vapor Deposition of TiSi Nanowires on C54 TiSi(2) Thin Film: An Amorphous Titanium Silicide Interlayer Assisted Nanowire Growth(2009-11-24) ;Lin, Huang-Kai ;Cheng, Hsin-An ;Lee, Chi-Young ;Chiu, Hsin-Tien應用化學系A C54-TiSi(2) film was grown on a Si substrate at 1073 K by low pressure chemical vapor deposition (LPCVD) employing titanium subchlorides TiCl(x)((g)), generated by reacting between TiCl(4(g)) and Ti((s)) at 1173 K, as the Ti source. Growth of titanium silicide (TiSi) nanowires (NWs; diameter 30-80 rim, length several micrometers) on a C54-TiSi(2) film was observed. Growth direction of the NWs was determined to be along the [010] axis. An amorphous titanium silicide interlayer was observed between the NWs and the C54-TiSi(2) film. This interlayer, probably existing as a quasi-liquid thin film during the growth, appears to be the key factor to assist the NW development. Field emission properties, turn-on field E(o) and field enhancement factor beta, of the vertically grown TiSi NWs were determined to be 5.25 V mu m(-1) and 876, respectively.Item type:Item, Chemical Vapor Deposition of TiSi Nanowires on C54 TiSi2 Thin Film: An Amorphous Titanium Silicide Interlayer Assisted Nanowire Growth(2009-11-24) ;Lin, Huang-Kai ;Cheng, Hsin-An ;Lee, Chi-Young ;Chiu, Hsin-Tien應用化學系A C54-TiSi2 film was grown on a Si substrate at 1073 K by low pressure chemical vapor deposition (LPCVD) employing titanium subchlorides TiClx((g)), generated by reacting between TiCl4(g) and Ti-(s) at 1173 K, as the Ti source. Growth of titanium silicide (TiSi) nanowires (NWs; diameter 30-80 rim, length several micrometers) on a C54-TiSi2 film was observed. Growth direction of the NWs was determined to be along the [010] axis. An amorphous titanium silicide interlayer was observed between the NWs and the C54-TiSi2 film. This interlayer, probably existing as a quasi-liquid thin film during the growth, appears to be the key factor to assist the NW development. Field emission properties, turn-on field E-o and field enhancement factor beta, of the vertically grown TiSi NWs were determined to be 5.25 V mu m(-1) and 876, respectively.Item type:Item, Conversion oil Potassium Titanate Nanowires into Titanium Oxynitride Nanotubes(2011-10-01) ;Wei, Yen-Ju ;Peng, Chih-Wei ;Cheng, Ta-Ming ;Lin, Huang-KaiChen, Yu-LiangTunnel-structured potassium titanate with a K(3)Ti(8)O(17) phase was synthesized by direct oxidation of titanium powder mixed with KF(aq) in water vapor at 923 K. The reaction conditions were adjusted so that uniform single crystalline potassium titanate nanowires with [010] growth direction (length: 5-30 mu m, diameter: 80-100 nm) were obtained. Nitridation of the nanowires by NH(3)(g) at 973-1073 K converted the titartate nanowires into rock-salt structured cubic phase single crystalline titanium oxynitride TiN(x)O(y) nanotubes (x = 0.88, y = 0.12, length = 1-10 mu m, diameter = 150-250 nm, wall thickness = 30 - 50 nm) and nanorods (x = 0.5, y = 0.5, length 1-5 mu m, diameter = 100-200 nm) with rough surfaces and [200] growth direction. The overall conversion of the titanate nanowires into the nanotubes and the nanorods can be rationalized by Ostwald ripening mechanism. We fabricated an electrode by adhering TiN(x)O(y) nanotubes (0.2 mg) on a screen-printed carbon electrode (geometric area: 0.2 cm(2)). Electrochemical impedance spectroscopy demonstrated its charge transfer resistance to be 20 Omega. The electrochemical surface area of the nanotubes on the electrode was characterized by cyclic voltammetry to be 0.32 cm(2). This property suggests that the TiN(x)O(y) nanostructures can be employed as potential electrode materials for electrochemical applications.Item type:Item, Growth of Carbon Nanocoils from K and Ag Cooperative Bicatalyst Assisted Thermal Decomposition of Acetylene(2010-07-01) ;Liu, Wen-Chih ;Lin, Huang-Kai ;Chen, Yu-Liang ;Lee, Chi-YoungChiu, Hsin-TienGrowth of amorphous carbon nanocoil (CNC) from acetylene on Si substrates was achieved by using nanosized Ag and K as the catalysts. The deposition of CNC was carried out inside a hot-wall reactor at 723 K using H(2) as the carrier gas. Based on the observed results, we propose a cooperative bimetal catalyst enhanced vapor-liquid-solid (VLS) growth mechanism to rationalize the CNC growth. In the reaction, the liquid phase metallic K dehydrogenated acetylene into the solid-state carbon, while the Ag nanoparticle assisted the extension of carbon one-dimensionally (1-D) via a tip-growth mechanism. Due to the adhesive force between the K liquid and the carbon, the 1-D solid curled along the C K interface into the nanocoil shape. Some CNC samples were further heat-treated at 1423 K and showed very good field emission properties. They emitted electrons (10 mu A/cm(2)) at a turn-on field E(10) of 2.51 V/mu m, while J(max) reached 17.71 mA/cm(2) at 5.64 V/mu m. The field enhancement factor beta was calculated to be 2124, comparable to other carbon nanotube (CNT) and CNC based emitters. The CNC was also characterized by using the electrochemical behavior of K(3)[Fe(CN)(6)] via cyclic voltammetry (CV). The electrochemical surface area of a CNC electrode (geometric surface area 0.078 cm(2)) was calculated to be 0.143 cm(2). These properties suggest that the CNC electrodes may have potential applications in field emission and electrochemical devices.Item type:Item, Growth of high-aspect-ratio gold nanowires on silicon by surfactant-assisted galvanic reductions(2008-06-03) ;Huang, Ting-Kai ;Chen, Ying-Chieh ;Ko, Hsin-Chun ;Huang, Hsin-WeiWang, Chia-HsinA simple galvanic reduction for direct growth of An nanowires on silicon wafers is developed. The nanowires were prepared by reacting HAuCl4(aq) with Sn-(s) in the presence of CTAC((aq)) (cetyltrimethylammonium chloride) and NaNO3(aq), which were important to the product morphology development. The nanowire diameter was 50-100 nm, and the length was more than 20 mu m.Item type:Item, Growth of Pagoda-Topped Tetragonal Copper Nanopillar Arrays(2009-07-01) ;Chang, I-Chun ;Huang, Ting-Kai ;Lin, Huang-Kai ;Tzeng, Yu-FengPeng, Chih-WeiGrowth of arrays of pagoda-topped tetragonal Cu nanopillar (length 1 - 6 mu m; width 150 +/- 25 nm) with {100) side races on Au/glass is achieved by,a simple electrochemical reduction of CuCl(2)(aq) by Al(s) in aqueous dodecyltrimethylammonium chloride. Field-emission measurement shows that the Cu nanopillars can emit electrons (10 mu A cm(-2)) at a turn-on field or 12.4 V mu m(-1) with a calculated held enhancement factor of 713.Item type:Item, Growth of polycrystalline tubular silicon carbide Yajima-type reaction at the vapor-solid interface(2007-08-07) ;Wang, Chia-Hsin ;Lin, Huang-Kai ;Ke, Tsung-Ying ;Palathinkal, Thomas-JosephTai, Nyan-HwaPolycrystalline tubular SiC on Si is prepared by reacting MeSiHCl2 vapor and Ca thin film on Si at 773-923 K followed by heat treatment at 1273 K. The reaction is a solvent-free Yajima-type process taking place at the vapor-solid interface. The products phase-segregate into a cable-like radial heterostructure composed of a core of CaCl2 and a shell of SiCxHy. After removal of the CaCl2 core, the layer of polycrystalline SiC tubes on Si can emit electrons at a low applied field of 2.5 V/mu m with a current of 10 mu A/cm(2).Item type:Item, Hierarchical Architecture for Network-on-Chip Platform(2009) ;Lin, Liang-Yu ;Lin, Huang-Kai ;Wang, Cheng-Yeh ;Van, Lan-DaJou, Jing-YangIn this paper, we propose one hierarchical 2-D mesh Network-on-Chip (NoC) platform to support applications with the complexity of several hundreds of tasks or with huge amount of transmission data. Moreover, applying the task binding method by considering communication amount, communication data contention and bandwidth penalty to enhance the system overall performance of the new architecture. Modeling the NoC system data transmission behavior at system level is applied to predict system overall performance and an automatic NoC system performance simulation too] is also built. Therefore, architecture and designer.,; can predict the system performance and obtain all parameters of the designed platform at system abstraction level. The experimental results show that the overall system throughput, the latency, and the saving of redundant transactions are improved by 27%. 14.4% and 21.8% respectively under the communication dominated situation.Item type:Item, Metallic conduction and large electron-phonon-impurity interference effect in single TiSi nanowires(2012-09-05) ;Hsu, Wei-Che ;Chen, Chao-Chun ;Lin, Yong-Han ;Lin, Huang-KaiChiu, Hsin-TienWe report on the first electrical characterizations of single-crystalline TiSi nanowires (NWs) synthesized by chemical vapor deposition reactions. By utilizing the focused-ion-beam-induced deposition technique, we have delicately made four-probe contacts onto individual NWs. The NW resistivities have been measured between 2 and 300 K, which reveal overall metallic conduction with small residual resistivity ratios in the NWs. Surprisingly, we find that the effect due to the interference processes between the elastic electron scattering and the electron-phonon scattering largely dominates over the usual Boltzmann transport even at room temperature. Such prominent electron-phonon-impurity interference effect is ascribed to the presence of large amounts of disorder and high Debye temperatures in TiSi NWs.Item type:Item, Phase segregation assisted morphology sculpting: Growth of graphite and silicon crystals via vapor-solid reactions(2007-03-22) ;Huang, Chih-Hao ;Chang, Yu-Hsu ;Lin, Huang-Kai ;Peng, Chih-WeiChung, Wen-ShengCrystalline graphite and Si showing fertile morphologies are prepared via vapor-solid reaction growth (VSRG). By reacting CaC2 with vapors of CxCly (CxCly: CCl4, C2Cl4, C4Cl6, and C5Cl6), porous, fibrous, and planar graphite were obtained at 973-1023, 1073-1123, and 1123-1223 K, respectively. Employing SiCl4 to react with MxSiy (MxSiy: Mg2Si and CaSi2) generated many Si structures. These include clustered-particle and porous, wirelike, corallike, and planar or platelike at 1023, 1073, 1123, and 1223 K, respectively. The reaction products, the network solids (graphite and Si) and the ionic solids MCl2, phase-segregated into self-templating molds and casts and develop cooperatively into various three-dimensional structures. Final morphology of the network solids depends not only on the reaction temperature but their molar volume ratio to the MCl2 salt products.Item type:Item, Preparation of Mo2C@a-C core-shell powders via carburization of Mo particles by 1-chlorobutane and hexachlorobenzene(2007-07-01) ;Chien, Chun-Hsiung ;Sheng, Pei-Sun ;Wang, Chia-Hsin ;Huang, Chih-HaoLin, Huang-KaiMo2C@a-C core-shell powders were prepared by reacting Mo powders with gaseous 1-chlorobutane or hexachlorobenzene at 1173 K. The chlorinated reactants acted as the source of carbon for the carburization of Mo and the source of chlorine, which assists the etching of Mo to reduced particle sizes. (C) 2006 Elsevier B.V. All rights reserved.Item type:Item, Preparation of titanium oxynitride nanotubes(2011-03-27) ;Wei, Yen-Ju ;Peng, Chih-Wei ;Lin, Huang-Kai ;Lee, Chi-YoungChiu, Hsin-TienItem type:Item, Synthesis of carbon hollow spheres and particles from CCl4 and Mo(2008-03-31) ;Chien, Chun-Hsiung ;Sheng, Pei-Sun ;Wang, Chia-Hsi ;Huang, Chi-HaoLin, Huang-KaiCarbon materials with different morphology were prepared by reacting CCl4 and Mo at 873-1173 K. At 873-973 K, hollow spheres (diameter: 1-3 mu m, shell thickness: 50 nm) were obtained. At 1073 K, particles (diameter: 50-100 nm) encapsulated in spherical shells (diameter: 1-5 mu m) were collected. At H 73 K, formation of particles (diameter: 200-300 nm) was observed. Mo acted as a reagent to remove chlorine atoms from the carbon source and a template for the formation of the spherical structures. We propose that reaction temperature and polymerization of chlorinated species formed from the pyrolysis of CCl4 affect the morphology of carbon products greatly. (C) 2007 Elsevier B.V. All rights reserved.Item type:Item, Ti5Si3 nanowire and its field emission property(2008-04-08) ;Lin, Huang-Kai ;Tzeng, Yu-Fen ;Wang, Chia-Hsin ;Tai, Nyan-HwaLin, I-Nan