Browsing by Author "Lin, Huang-Shen"

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Low refractive index Si nanopillars on Si substrate
(2007-04-30)
Lin, Gong-Ru
;
Chang, Ya-Chung
;
Liu, En-Shao
;
Kuo, Hao-Chung
;
Lin, Huang-Shen
Low refractive index of a stalagmitelike high-aspect-ratio Si nanopillar array on Si dry etched using a self-aggregated Ni nanodot mask is demonstrated, which exhibits two minimum reflectances of 1.23 and 1.4 with corresponding refractive indices of 1.25 and 1.48 at 400 and 1200 nm, respectively. Angular dependency of the transverse electrical mode reflectance at 632.8 nm of the surface roughened Si nanopillar array is released, and the Brewster angle of 63 degrees with equivalent refractive index of 1.5 is determined. (C) 2007 American Institute of Physics.
Rapid self-assembly of Ni nanodots on Si substrate covered by a less-adhesive and heat-accumulated SiO2 layers
(2006-08-14)
Lin, Gong-Ru
;
Kuo, Hao-Chung
;
Lin, Huang-Shen
;
Kao, Chih-Chiang
;
光電工程學系
Rapid self-aggregation of Ni nanodots on Si substrate covered with a thin SiO2 buffered layer is investigated. The Ni nanodots can hardly self-aggregate on highly heat-dissipated Si substrate with a thermal conductivity of 148 W/m K. Adding a 200-A-thick SiO2 buffer with an ultralow thermal conductivity of 1.35 W/m K prevents the formation of NiSi2 compounds, enhances the heat accumulation, and releases the adhesion at Ni/Si interface, which greatly accelerates the self-assembly of Ni nanodots. Dense Ni nanodots with size and density of 30 nm and 7x10(10) cm(-2), respectively, can be formatted after rapid thermal annealing at 850 degrees C for 22 s. (c) 2006 American Institute of Physics.
Self-assembled Ni nanodot on SiO(2) film-a novel reactive ion etching mask for Si nanopillar formation on Si substrate
(2006-01-01)
Lin, Huang-Shen
;
Kao, Chih-Chiang
;
Kuo, Hao-Chung
;
Wang, Shing-Chung
;
Lin, Gong-Ru
By rapid thermal annealing the Ni film evaporated on thin SiO(2) layer covered Si substrate, we have successfully demonstrated the self-aggregation of two-dimensional randomized Ni nano-dots on Si wafer. The thin oxide layer prevents the formation of NiSi(2) compounds and facilitates the self-assembly of Ni nanodots from retaining the thermal power on SiO(2) layer. This greatly shrinks the annealing time required for metallic nanodot formation from > 10 min to < 30 sec. With the advantage of the self-assemble Ni/SiO(2) nano-dots based nano-mask, a large-area Si nano-pillar array with rod size of < 50 nm can be formatted on Si substrate through the induced coupled plasma reactive ion etching (ICPRIE) procedure. After removing Ni dots and the SiO(2) film on the Si substrate, both the visible and near infrared photoluminescence from the Si nano-pillar sample were observed and analyzed.
Self-assembled Ni nanodot on SiO2 film-a novel reactive ion etching mask for Si nanopillar formation on Si substrate
(2006-01-01)
Lin, Huang-Shen
;
Kao, Chih-Chiang
;
Kuo, Hao-Chung
;
Wang, Shing-Chung
;
Lin, Gong-Ru
By rapid thermal annealing the Ni film evaporated on thin SiO2 layer covered Si substrate, we have successfully demonstrated the self-aggregation of two-dimensional randomized Ni nano-dots on Si wafer. The thin oxide layer prevents the formation of NiSi2 compounds and facilitates the self-assembly of Ni nanodots from retaining the thermal power on SiO2 layer. This greatly shrinks the annealing time required for metallic nanodot formation from > 10 min to < 30 sec. With the advantage of the self-assemble Ni/SiO2 nano-dots based nano-mask, a large-area Si nano-pillar array with rod size of < 50 nm can be formatted on Si substrate through the induced coupled plasma reactive ion etching (ICPRIE) procedure. After removing Ni dots and the SiO2 film on the Si substrate, both the visible and near infrared photoluminescence from the Si nano-pillar sample were observed and analyzed.