Browsing by Author "Lin, Hui-Ni"

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An Organic Hole Transport Layer Enhances the Performance of Colloidal PbSe Quantum Dot Photovoltaic Devices
(2010-10-22)
Kuo, Chih-Yin
;
Su, Ming-Shin
;
Hsu, Yu-Chien
;
Lin, Hui-Ni
;
Wei, Kung-Hwa
A thin poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) hole transport layer enhances the AM1.5 power conversion efficiency of a PbSe quantum dot (QD)-containing photovoltaic device to 2.4%, from 1.5% for a standard PbSe QD device, a relative increase of 60%. Synchrotron X-ray reflectivity measurements reveal that the roughness of the interfaces between the various layers decreases dramatically in the presence of the PEDOT: PSS layer. In addition, the device life time under continuous simulated AM1.5 irradiation (100 mW cm(-2)), measured in terms of the time required to reach 80% of the normalized efficiency, for the PbSe QD device incorporating the PEDOT:PSS hole transport layer is six times longer than that of the standard PbSe QD device.
An Organic Hole Transport Layer Enhances the Performance of Colloidal PbSe Quantum Dot Photovoltaic Devices
(2010-10-22)
Kuo, Chih-Yin
;
Su, Ming-Shin
;
Hsu, Yu-Chien
;
Lin, Hui-Ni
;
Wei, Kung-Hwa
A thin poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) hole transport layer enhances the AM1.5 power conversion efficiency of a PbSe quantum dot (QD)-containing photovoltaic device to 2.4%, from 1.5% for a standard PbSe QD device, a relative increase of 60%. Synchrotron X-ray reflectivity measurements reveal that the roughness of the interfaces between the various layers decreases dramatically in the presence of the PEDOT: PSS layer. In addition, the device life time under continuous simulated AM1.5 irradiation (100 mW cm(-2)), measured in terms of the time required to reach 80% of the normalized efficiency, for the PbSe QD device incorporating the PEDOT:PSS hole transport layer is six times longer than that of the standard PbSe QD device.