Browsing by Author "Lin, I-Feng"

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All-solution-processed blue small molecular organic light-emitting diodes with multilayer device structure
(2009-12-01)
You, Jia-Da
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Tseng, Shin-Rong
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Meng, Hsin-Fei
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Yen, Feng-Wen
;
Lin, I-Feng
All-solution-processed multilayer blue small molecular organic light-emitting diodes are fabricated by blade coating method. Fluorescent blue host, 1-(7 -(9.9'-bianthracen-10-yl)-9,9-dioctyl-9H-fluoren-2-yl)pyrene, and blue dopant, 4,4'-(1E,1'E)-2,2'-(naphthalene-2,6-diyl)bis(ethene-2,1-diyl)bis(N,N-bis(4-hexylphenyl)aniline),are used to achieve good solubility and pinhole-free thin film by solution process. The multilayer device structure with hole/electron transport layer is achieved by blade coating method without the dissolution problem between layers. The efficiency of the all-solution-processed device is 4.8 cd/A at 1200 cd/m(2), close to that by thermal deposition in high vacuum chamber. The device performance is optimized with the annealing temperature of TPBi layer at 50 degrees C. (C) 2009 Elsevier B.V. All rights reserved.
All-Solution-Processed Multilayered Small-Molecule OLEDs with High Device Efficiency
(2009)
Tseng, Hsin-Rong
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Meng, Hsin-Fei
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You, Jia-Da
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Horng, Sheng-Fu
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Yen, Feng-Wen
All-solution-processed multilayer blue small molecular organic light-emitting diodes are fabri-cated by blade coating method. Fluorescent blue host,1-(7-(9,9'-bianthracen-10-yl)- 9,9-dioctyl-9H-fluoren-2-yl)pyrene, and blue dopant, 4,4'-(IE,I'E)-2,2'(naphthalene-2,6-diyl)bis(ethene-2,1-diyl)bis(N,N-bis(4-hexylphenyl)aniline), are synthesized to achieve good solubility and pinhole free thin film by solution process. The multilayer device structure with holelelectron transport layer is achieved by blade coating method without the dissolution problem between layers. The efficiency of the all-solution-processed device is 4.8 cd/A at 1,200 cd/m(2), close to that by thermal deposition in high vacuum chamber.
AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
(2017-04-27)
Tzou, An-Jye
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Chu, Kuo-Hsiung
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Lin, I-Feng
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Ostreng, Erik
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Fang, Yung-Sheng
We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 degrees C. The AlN was grown by N-2-based plasma enhanced atomic layer deposition (PEALD) and shown a refractive index of 1.94 at 633 nm of wavelength. Prior to deposit AlN on III-nitrides, the H-2/NH3 plasma pretreatment led to remove the native gallium oxide. The X-ray photoelectron spectroscopy (XPS) spectroscopy confirmed that the native oxide can be effectively decomposed by hydrogen plasma. Following the in situ ALD-AlN passivation, the surface traps can be eliminated and corresponding to a 22.1% of current collapse with quiescent drain bias (V-DSQ) at 40 V. Furthermore, the high temperature measurement exhibited a shift-free threshold voltage (V-th), corresponding to a 40.2% of current collapse at 150 degrees C. The thermal stable HEMT enabled a breakdown voltage (BV) to 687 V at high temperature, promising a good thermal reliability under high power operation.
Continuous blade coating for multi-layer large-area organic light-emitting diode and solar cell
(2011-11-01)
Chen, Chun-Yu
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Chang, Hao-Wen
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Chang, Yu-Fan
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Chang, Bo-Jie
;
Lin, Yuan-Sheng
A continuous roll-to-roll compatible blade-coating method for multi-layers of general organic semiconductors is developed. Dissolution of the underlying film during coating is prevented by simultaneously applying heating from the bottom and gentle hot wind from the top. The solvent is immediately expelled and reflow inhibited. This method succeeds for polymers and small molecules. Uniformity is within 10% for 5 cm by 5 cm area with a mean value of tens of nanometers for both organic light-emitting diode (OLED) and solar cell structure with little material waste. For phosphorescent OLED 25 cd/A is achieved for green, 15 cd/A for orange, and 8 cd/A for blue. For fluorescent OLED 4.3 cd/A is achieved for blue, 9 cd/A for orange, and 6.9 cd/A for white. For OLED with 2 cm by 3 cm active area, the luminance variation is within 10%. Power conversion efficiency of 4.1% is achieved for polymer solar cell, similar to spin coating using the same materials. Very-low-cost and high-throughput fabrication of efficient organic devices is realized by the continuous blade-only method. (C) 2011 American Institute of Physics. [doi:10.1063/1.3636398]
Highly efficient solution-processed red organic light-emitting diodes with long-side-chained triplet emitter
(2011-01-01)
Chao, Yu-Chiang
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Huang, Sheng-Yang
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Chen, Chun-Yu
;
Chang, Yu-Fan
;
Meng, Hsin-Fei
Newly synthesized red It complexes tris[2-(4-n-hexyl-phenyl)quinoline]iridium(III) and tris[(4-n-hexylphenyl)isoquinoline)]iridium(III) with long alkyl side chains are utilized to demonstrate the high efficiency multi-layer solution-processed red organic light-emitting diodes. Solubilities of these triplet emitters are high which enable them to be uniformly dispersed in the polymer host. Blade coating method is utilized to prepare organic multi-layers without mutual dissolution between different layers. 17 cd/A current efficiency, 10 lm/W power efficiency, and 8.8% external quantum efficiency can be achieved for the device with CsF/Al cathode. 10,000 cd/m(2) is reached at 10 V. Similar quantum efficiency is also achieved with an electron-transport layer and LiF/Al cathode. (C) 2010 Elsevier B.V. All rights reserved.
The development of low-temperature atomic layer deposition of HfO2 for TEM sample preparation on soft photo-resist substrate
(2018-01-01)
Peng, Kang-Ping
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Liu, Ya-Chi
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Lin, I-Feng
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Lin, Chih-Chien
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Huang, Shu-Wei
In this study, the method of low-temperature atomic layer deposition (ALD), which is applied on the soft photo-resist (PR) substrate forming hafnium dioxide (HfO2) at 40 degrees C to 85 degrees C, is reported for the first time. This reveals the potential application in the TEM sample preparation. The thickness, refractive index, band gap, and depth profiling chemical state of the thin film are analyzed by ellipsometry, X-ray diffraction, and photoelectron spectroscopy respectively. Our TEM image shows a clear boundary between the photo-resist and hafnium dioxide deposited on PR, which indicates the low-temperature atomic layer deposition (ALD) may lead a new way for TEM sample preparation in advanced technology node.