Browsing by Author "Lin, J. -H."

Now showing 1 - 3 of 3

Analysis of the Short-Term Response in the Drain Current of a-IGZO TFT to Light Pulses
(2017-07-01)
Liu, H. -W.
;
Chan, P. -C.
;
Lin, J. -H.
;
Chang, C. -Y.
;
Tai, Y. -H.
In this letter, the response in the drain current (I-D) of the amorphous indium-gallium-zinc oxide thin-film transistors under positive-bias illumination stress is measured with respect to time in less than 5 s under light pulseswith altering frequencies and duty ratios. The curves of I-D under the light pulses are affected by the different defect-reacting rates under illumination and in the dark. By taking the derivative of ID, the trend of the change in the number of defects becomes clear. The total behavior of I-D in response to light pulses can be fairly predicted by the integral of the derivative terms with a correction factor of charge trapping.
Q-switched and mode-locked pulses generation in Nd : GdVO4 laser with dual loss-modulation mechanism
(2008-04-01)
Lin, J. -H.
;
Lin, K. -H.
;
Hsu, H. -H.
;
Hsieh, W. -F.
;
光電工程學系
Regular and robust Q-switched and mode-locked (QML) pulses are produced in Nd:GdVO4 laser by the integration of nonlinear mirror and semiconductor saturable absorber mirror. The threshold of QML operation is increased by putting the SESAM in laser cavity with large beam radius. The nonlinear mirror absorber can further increase nonlinear loss modulation of pulses to produce the stable and periodic QML pulses.
Structural Characteristics and Annealing Effect of ZnO Epitaxial Films Grown by Atomic Layer Deposition
(2009-12-01)
Yang, S.
;
Lin, B. H.
;
Liu, W. -R.
;
Lin, J. -H.
;
Chang, C. -S.
Structural characteristics of the ZnO epitaxial films grown on c-plane sapphire by the atomic layer deposition method were thoroughly studied. The in-plane axes of the e-plane oriented ZnO layers are predominantly aligned with that of the sapphire substrate, yielding the relationship of {10 (1) over bar0}(ZnO) parallel to {10 (1) over bar0}(Al2O3). The minor orientation with a 30 degrees in-plane twist configuration, that is, {10 (1) over bar0}(ZnO) parallel to {11 (2) over bar0}(Al2O3),which is more commonly observed in ZnO films grown by metal organic chemical vapor deposition, pulsed laser deposition, and other methods, only amounts to less than 3% and can be eliminated by thermal annealing. The structure of the ZnO, epi-films exhibits significantly improvement upon thermal annealing, and intrinsic types of basal plane stacking faults are the predominant Structural defects in the ZnO after thermal treatment. The effect of post growth thermal treatment is reported in this work.