Browsing by Author "Lin, J. F."

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Impact of self-heating effect on hot carrier degradation in high-voltage LDMOS
(2007)
Cheng, Chih-Chang
;
Lin, J. F.
;
Wang, Tahui
;
Hsieh, T. H.
;
Tzeng, J. T.
Self-heating induced transient hot carrier effects in high-voltage n-LDMOS are investigated. A novel LDMOS structure incorporating a metal contact in the bird's beak region is fabricated, which allows us to probe an internal voltage transient in hot carrier stress. The AC stress-frequency dependence of device degradation is characterized and evaluated by a two-dimensional numerical simulation. Our result shows that drain current degradation in AC stress is more serious than in DC stress because of the reduction. of self-heating effect.
Physics and characterization of various hot-carrier degradation modes in LDMOS by using a three-region charge-pumping technique
(2006-09-01)
Cheng, Chih-Chang
;
Lin, J. F.
;
Wang, Tahui
;
Hsieh, T. H.
;
Tzeng, J. T.
Degradation of lateral diffused MOS transistors in various hot-carrier stress modes is investigated. A novel three-region charge-pumping technique is proposed to characterize interface trap (Nit) and bulk oxide charge Q(ox) creation in the channel and in the drift regions separately. The growth rates of N-it and Q(ox) are extracted from the proposed method. A two-dimensional numerical device simulation is performed to gain insight into device degradation characteristics in different stress conditions. This paper shows that a maximum I-g stress causes the largest drain current and subthreshold slope degradation because of both N-it generation in the channel and Q(ox) creation in the bird's beak region. The impact of oxide trap property and location on device electrical characteristics is analyzed from measurement and simulation.