Browsing by Author "Lin, Jauyn Grace"

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Current Developments for Taiwanese Women in Physics
(2015)
Hsu, Shih-Ying
;
Ho, Mon-Shu
;
Lin, Jauyn Grace
;
Hu, Shu-Fen
;
Chiu, Ya-Ping
Statistics for 2002 to 2012 show that the percentage of women among graduates in physics and astronomy has not changed much in the Republic of China in Taiwan. Women comprise about 15% of graduates with bachelor\'s degrees in physics and astronomy, 17% of those with master\'s degrees, and 12% of doctorates. The number of female faculty members has increased slightly during this time frame but overall has stayed at approximately 11%.
Large Photoresponsivity in the Amorphous-TiO2/SrRuO(3)Heterostructure
(1970-01-01)
Liu, Heng-Jui
;
Huang, Chin-Han
;
Chen, Cheng-Ying
;
Hsiao, Sheng-Wei
;
Chen, You-Sheng
Thin-film heterostructures are effective in enhancing the performance or triggering novel physical phenomena of optoelectronic applications. For example, the epitaxial heterostructures of ultraviolet-light-sensitive TiO(2)with metallic SrRuO(3)can acquire visible-light functionalities using the hot carrier injection mechanism. Therefore, the TiO2/SrRuO(3)heterostructure system has recently attracted increasing interest. Herein, the amorphous-TiO2/SrRuO(3)heterostructure is fabricated and compared to the epitaxial TiO2/SrRuO3. As opposed to the occurrence of the visible-light photovoltaic effect in the epitaxial TiO2/SrRuO3, the amorphous-TiO2/SrRuO(3)heterostructure herein exhibits different optoelectronic functionality, specifically the photoresistor behavior. The amorphous-TiO2/SrRuO(3)heterostructure achieves a photoresponsivity of 6.56 A W(-1)at 1 V. Such a performance is hardly obtained in typical oxide-based photoresistors. The analyses of the crystalline and electronic structures show that it is due to the defect-induced high electron doping in the amorphous TiO(2)with hot carrier injection mechanism. This study discusses the correlation between the hot carrier injection and band diagram, which provides more degrees of freedom in designing potential optoelectronic devices.