Browsing by Author "Lin, Jian-Yang"

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Charge storage characteristics of high density Mo nanocrystal embedded in silicon oxide and silicon nitride
(2010-02-24)
Lin, Chao-Cheng
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Chang, Ting-Chang
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Tu, Chun-Hao
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Chen, Shih-Ching
;
Hu, Chih-Wei
We investigated the formation and charge storage characteristics of Mo nanocrystals in silicon oxide and in silicon nitride by rapid thermal annealing of oxygen- and nitrogen-incorporated Mo and Si mixed layers. A high density of Mo nanocrystal (6 x 10(12) cm(-2)) was formed in the nitrogen-incorporated layer. Electrical analyses indicated that the memory window of the Mo nanocrystal embedded in the nitride is larger than that in the oxide. A reliability test showed that the Mo nanocrystal in the nitride has better reliability than the Mo nanocrystal in the oxide, which was explained by an electrical field simulation.
Charge storage characteristics of Mo nanocrystal dependence on Mo oxide reduction
(2008-12-01)
Lin, Chao-Cheng
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Chang, Ting-
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Tu, Chun-Hao
;
Chen, Wei-Ren
;
Hu, Chih-Wei
An oxygen incorporated Mo silicide was explored to form the Mo nanocrystals after rapid thermal annealing. Transmission electron microscopy showed the nanocrystals embedded in SiO(x). Charge storage characteristics of Mo nanocrystals influenced by the Mo oxide and the surrounding oxide were investigated through x-ray photoelectron spectroscopy and the electrical measurement. X-ray photoelectron spectra analyses revealed the redox reaction in the oxygen incorporated Mo silicide layer after rapid thermal annealing. The memory window and retention were improved due to reduction in Mo oxide.
Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatment
(2009)
Lin, Chao-Cheng
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Chang, Ting-Chang
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Tu, Chun-Hao
;
Chen, Wei-Ren
;
Hu, Chih-Wei
Mo nanocrystal memory was fabricated through annealing the oxygen-incorporated Mo and Si layers. We then investigated the influence an of ammonia plasma treatment on the nonvolatile memory characteristics of a charge storage layer composed of Mo nanocrystal memory embedded in SiO(x). Transmission electron microscopy revealed the nanostructure of the charge storage layer, and X-ray photoelectron spectra analyses revealed that nitrogen was incorporated into the charge storage layer. Electric analyses indicated that the memory window reduced, and both retention and endurance improved after the treatment. The reduction in the memory window was attributed to the decrease in charge trapping centers in the surrounding oxide after the treatment. The improvement of retention was interpreted in terms of the nitrogen passivation of traps in the oxide around the Mo nanocrystals. The robust endurance characteristic was attributed to the improvement of the quality of the surrounding oxide by nitrogen passivation.
Enhancement of the stability of resistive switching characteristics by conduction path reconstruction
(2013-07-22)
Huang, Jheng-Jie
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Chang, Ting-Chang
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Yu, Chih-Cheng
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Huang, Hui-Chun
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Chen, Yu-Ting
In this study, a Pt/BiFeO3/TiN device was fabricated and the resistance switching characteristics were investigated. After the first forming process, the conduction path was formed and exhibited unstable bipolar switching characteristics. Subsequently, the original conduction path was destroyed thoroughly by high negative bias. By reconstructing the conduction path after a second forming process (re-forming process), the device exhibits stable bipolar switching characteristics. Transmission electron microscopy analysis indicates that the stability of switching behavior was enhanced because of the joule heating effect, and is an easy way to improve the resistance switching characteristics. (C) 2013 AIP Publishing LLC.
Improved reliability of Mo nanocrystal memory with ammonia plasma treatment
(2009-02-09)
Lin, Chao-Cheng
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Chang, Ting-Chang
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Tu, Chun-Hao
;
Chen, Wei-Ren
;
Hu, Chih-Wei
We investigated ammonia plasma treatment influence on the nonvolatile memory characteristics of the charge storage layer composed of Mo nanocrystals embedded in nonstoichiometry oxide (SiO(x)). X-ray photoelectron spectra analyses revealed that nitrogen was incorporated into the charge storage layer. Electric analyses indicated that the memory window was reduced and the retention and the endurance improved after the treatment. The reduction in the memory window and the improvement in retention were interpreted in terms of the nitrogen passivation of traps in the oxide around Mo nanocrystals. The robust endurance characteristic was attributed the improvement of the quality of the surrounding oxide by nitrogen passivation.
Improvement of Charge-Storage Characteristics of Mo Nanocrystal Memory by Double-Layer Structure
(2009)
Lin, Chao-Cheng
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Chang, Ting-Chang
;
Tu, Chun-Hao
;
Chen, Wei-Ren
;
Feng, Li-Wen
An oxygen-incorporated Mo silicide layer was explored to form the Mo nanocrystals after rapid thermal annealing. Transmission electron microscopy showed the nanocrystals embedded in SiO(x). Charge-storage characteristics of Mo nanocrystals influenced by Mo oxide and its surrounding oxide were investigated through X-ray photoelectron spectroscopy and electrical measurement. X-ray photoelectron spectral analyses revealed a redox reaction in the oxygen-incorporated Mo silicide layer after rapid thermal annealing at a critical temperature. The memory window and retention were improved because of the reduction of Mo oxide. Furthermore, the double-layer nanocrystal structure was fabricated through the annealed stacked oxygen incorporated Mo silicide layer. A larger memory window and long retention were found for the double-layer nanocrystal structure. We used an energy band diagram to explain the difference in retention characteristics between single- and double-layer structures.
Nitric Acid Oxidation of Si for the Tunneling Oxide Application on CoSi(2) Nanocrystals Nonvolatile Memory
(2010-01-01)
Hu, Chih-Wei
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Chang, Ting-Chang
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Tu, Chun-Hao
;
Chen, Yang-Dong
;
Lin, Chao-Cheng
In this work, nitric acid oxidation was studied to fabricate the tunneling oxide of nanocrystal memory devices. SiO(2) about 4 nm thick was formed through oxidizing the sputtered Si film by immersing in nitric acid solution (HNO(3):H(2)O=1:10) for 60 s. After oxide formation, a rapid thermal annealing process set at 700 degrees C for 30 s was used to improve oxide quality. In addition, the formed SiO(2) film was analyzed by X-ray photoelectron, capacitance-voltage, and current density-voltage measurements to study the process of the nitric acid oxidation. After the investigation of the nitric acid oxidized SiO(2), a 6 nm thick cobalt silicide thin film was deposited and aggregated on the formed SiO(2) layer as the charge-trapping layer. The cobalt silicide nanocrystal memory device showed an obvious memory effect and good reliability, which confirms that the nitric acid oxidation method has potential for memory application.
Nitric Acid Oxidation of Si for the Tunneling Oxide Application on CoSi2 Nanocrystals Nonvolatile Memory
(2010-01-01)
Hu, Chih-Wei
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Chang, Ting-Chang
;
Tu, Chun-Hao
;
Chen, Yang-Dong
;
Lin, Chao-Cheng
In this work, nitric acid oxidation was studied to fabricate the tunneling oxide of nanocrystal memory devices. SiO2 about 4 nm thick was formed through oxidizing the sputtered Si film by immersing in nitric acid solution (HNO3:H2O=1:10) for 60 s. After oxide formation, a rapid thermal annealing process set at 700 degrees C for 30 s was used to improve oxide quality. In addition, the formed SiO2 film was analyzed by X-ray photoelectron, capacitance-voltage, and current density-voltage measurements to study the process of the nitric acid oxidation. After the investigation of the nitric acid oxidized SiO2, a 6 nm thick cobalt silicide thin film was deposited and aggregated on the formed SiO2 layer as the charge-trapping layer. The cobalt silicide nanocrystal memory device showed an obvious memory effect and good reliability, which confirms that the nitric acid oxidation method has potential for memory application.
Nitric Acid Oxidized ZrO(2) as the Tunneling Oxide of Cobalt Silicide Nanocrystal Memory Devices
(2011-09-01)
Hu, Chih-Wei
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Chang, Ting-Chang
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Tu, Chun-Hao
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Chen, Yang-Dong
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Lin, Chao-Cheng
In this study, ZrO(2) formed by the nitric acid oxidation method is proposed to be the tunneling oxide for nonvolatile memory device applications. The sputtered Zr thin film was oxidized by immersing in the nitric acid solution (HNO(3):H(2)O = 1:10) for 60 s at room temperature. The quality of the formed ZrO(2) was also extracted by the capacitance-voltage and current density-voltage measurements. Then, X-ray photoelectron spectroscopy has been used to confirm that the deposited Zr can be oxidized completely after the oxidation process. Moreover, a CoSi(2) thin film was deposited on the nitric acid oxidized ZrO(2) as the self-assembled layer of the memory device. After the device fabrication, the electrical and material characteristics of the CoSi(2) nanocrystal memory devices have also been demonstrated and discussed.
Nitric Acid Oxidized ZrO2 as the Tunneling Oxide of Cobalt Silicide Nanocrystal Memory Devices
(2011-09-01)
Hu, Chih-Wei
;
Chang, Ting-Chang
;
Tu, Chun-Hao
;
Chen, Yang-Dong
;
Lin, Chao-Cheng
In this study, ZrO2 formed by the nitric acid oxidation method is proposed to be the tunneling oxide for nonvolatile memory device applications. The sputtered Zr thin film was oxidized by immersing in the nitric acid solution (HNO3:H2O = 1:10) for 60 s at room temperature. The quality of the formed ZrO2 was also extracted by the capacitance-voltage and current density-voltage measurements. Then, X-ray photoelectron spectroscopy has been used to confirm that the deposited Zr can be oxidized completely after the oxidation process. Moreover, a CoSi2 thin film was deposited on the nitric acid oxidized ZrO2 as the self-assembled layer of the memory device. After the device fabrication, the electrical and material characteristics of the CoSi2 nanocrystal memory devices have also been demonstrated and discussed.