Browsing by Author "Lin, K. C."

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Controlled density growth of carbon nanotubes and its improvement on field emission properties
(2004)
Juan, C. P.
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Tsai, C. C.
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Chen, K. J.
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Hong, W. K.
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Lin, K. C.
The density distribution of the CNTs is one of the crucial parameters for the field emission property of CNTs.We use an inactive thin film layer that was deposited on the catalyst to effectively control the density of the CNTs. The results showed the improved field emission property could be obtained with a thin SiO layer on the catalyst layer as the precursor. For the 3.5 nm Fe and 3.5 nm SiO on 3.5 nm Fe as the catalyst, the turn-on field can be reduced from 3.7 V/ mu m. to 2.2 V/ mu m and the field emission current density increased from 2.6x 10(-8) A/cm(2) to 2.4x 10(-4) A/cm(2) when the applied field was 4 V/mu m. The extremely low turn-on field of 1.3 V/ mu m was also discovered for the CNTs grown with the precursor contained 1.5 nm SiO on 1.5 nm Fe; the extremely high emission current density of 4x 10(-2) A/cm(2) was also achieved under the low electric field of 3.5 V/ mu m.
Exploring the Development and Complements of the Smart Grid Industry between Taiwan and China
(2013)
Wang, J. S.
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Yin, C. Y.
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Lin, K. C.
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Shyu, J. Z.
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科技管理研究所
At present, many countries devote a lot of resources to develop "smart grid", including Taiwan and China. To establish a smart grid industry at the ground of the back-end management system, the most important subsystems are the smart meter, meter data management system, and energy information communication technology. This study mainly applied the industrial portfolio matrix composed with the industry life cycle and the industry value chain (industrial technology capability phase) to analyze the subsystem industries and its positions. Analysis results showed that the two sides have significant development in the smart meter subsystem industry, however, not in the other two, meter data management system and energy information communication technology subsystems. It proves that the two sides are still in the initial stage in the two subsystem industries.
Fluorescence signals of quantum dots influenced by spatially controlled array structures
(2009-10-14)
Chou, J. W.
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Lin, K. C.
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Tang, Y. T.
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Hsueh, F. K.
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Lee, Yao-Jen
Fluorescence signals of quantum dots (QDs) influenced by different array structures of gold-coated silicon nanorods (SiNRs) were investigated via experimental observations and two-dimensional (2D) finite element method (FEM) simulations. On the densest gold-coated SiNRs array structure, the highest QD fluorescence quenching rates were observed and on the sparsest array structure, the highest QD fluorescence enhancement rates were observed. By developing a new technique which obtains the optical image of the array structures without losing information about the QD locations, we were able to further investigate how the QD fluorescence is influenced by spatially controlled array structures.
Growth and Field Emission Characteristics of Pillar-like Carbon Nanotubes Using Co-Ti/Al Co-deposited Catalysts at Low Temperature
(2010)
Chang, C. T.
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Lee, C. Y.
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Lin, K. C.
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Lai, R. L.
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Tsai, Wan-Lin
In this essay, the pillar-like CNT field emission arrays synthesis with co-deposited catalysts at low temperature (550 degrees C) was proposed. Pillar-like CNT has been successfully synthesized by thermal CVD system. The current density of this proposed pillar like CNTs was as high as 1272 mu A/cm(2) at 6 V/mu m and the turn-on field was 3.6 V/mu m. Additionally, the reliability was more stable as lower than 7% degradation of initial current density.
Improved Field Emission Characteristics with different Electrode Materials by forming process in a Quasi-planar Thin Film Field Emission Diode
(2010-01-01)
Chang, C. T.
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Hsu, Y. Y.
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Lin, K. C.
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Tsai, Wan-Lin
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Chien, Yun-Shan
The essay was reported the different electrode materials in a quasi-planar thin film field emission diode by different forming process. The forming process causes an increased surface roughness of emitters or reduced the work function of the emitter and results in a higher field enhancement factor, which shows better field emission characteristics. The turn on voltage could from 15 V to 8 V and 6.5V with Co and Pd electrode at the emission current of 100 nA for samples.
Nanocontact resistance and structural disorder induced resistivity variation in metallic metal-oxide nanowires
(2009-11-11)
Lin, Y. F.
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Wu, Z. Y.
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Lin, K. C.
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Chen, C. C.
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Jian, W. B.
Several systems of metallic metal-oxide nanowires (NWs), including pure RuO(2) and as-implanted and annealed Ru(0.98)Cu(0.02)O(2) and Ru(0.93)Cu(0.07)O(2) NWs, have been employed in two-probe electrical characterizations by using a transmission electron microscope-scanning tunneling microscope technique with a gold tip. Thermal, mechanical, and electron beam exposing treatments are consecutively applied to reduce the electrical contact resistance, generated from the interface between the NW and the gold tip, so as to evaluate the intrinsic NW resistance. It is found that the residual contact resistance cannot be entirely removed. For each system of metallic metal-oxide NWs, several tens of NWs are applied to electrical characterizations and the total resistances unveil a linear dependence on the ratio of the length to the area of the NWs. As a result, the average resistivity and the contact resistance of the metallic metal-oxide NWs could be evaluated at room temperatures. The average resistivities of pure RuO(2) NWs agree well with the results obtained from standard two- and four-probe electrical-transport measurements. In addition, the as-implanted Cu-RuO(2) NWs reveal disordered crystalline structures in high-resolution TEM images and give higher resistivities in comparison with that of pure RuO(2) NWs. The residual contact resistances of all kinds of metallic metal-oxide NWs unveil, more surprisingly, an approximation value of several kilohms, even though the average resistivities of these NWs change by more than one order of magnitude. It is argued that the ductile gold tip makes one or more soft contacts on the stiff metal-oxide NWs with nanometer roughness and the nanocontacts on the NWs contribute to the electrical contact resistance.
Seismic analysis of underground tunnels by the 2.5D finite/infinite element approach
(2016-06)
Lin, K. C.
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Hung, H. H.
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Yang, Judy P.
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Yang, Y. B.
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土木工程學系
A procedure for the seismic analysis of underground tunnels using recorded free-field earthquakes based on the 2.5D finite/infinite element approach is presented. The near and far fields of the half space are modeled by finite and infinite elements, respectively. Using the 1D wave theory, the nodal force and displacement on the near-field boundary are computed for each spectral frequency of the earthquake. Then, equivalent seismic forces are computed for the near-field boundary for the earthquake spectrum. By assuming the soil-tunnel system to be uniform along the tunnel axis, the 2.5D approach can account for the wave transmission along the tunnel axis, which reduces to the 2D case for infinite transmission velocity. The horizontal and vertical components of the 1999 Chi-Chi Earthquake (TCU068) are adopted as the free-field motions in the numerical analysis. The maximal stresses and distribution patterns of the tunnel section under the P- and SV-waves are thoroughly studied by the 2.5D and 2D approaches, which should prove useful to the design of underground tunnels. (C) 2016 Elsevier Ltd. All rights reserved.
Trapping and de-trapping characteristics in PBTI and dynamic PBTI between HfO2 and HfSiON gate dielectrics
(2008)
Lin, We-Liang
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Lee, Yao-Jen
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Lo, Wen-Cheng
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Chen, King-Sheng
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Hou, Y. T.
PBTI degradation for HfO2 and HfSiON NMOSFETs has been demonstrated. The generated oxide trap dominated the PBTI characteristics for Hf-based gate dielectrics. In addition, the reduction of Delta V-TH and oxide trap generation under PBTI indicates that the HfSiON is better than HfO2. On the other hand, the electron trapping/de-trapping effect has been investigated. As compared to HfO2 dielectrics, the HfSiON has shallower charge trapping level due to elimination of deep dielectric vacancies, and the temperature effects are quite different between the HfSiON and HfO2 gate dielectrics.
UV photodetectors with lateral self-assembled ZnO nanowires grown at low temperature
(2009)
Yang, P. Y.
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Lee, I. C.
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Chang, C. T.
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Lin, K. C.
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Wang, J. L.
In this paper, a self-assembled lateral growth of ZnO nanowire (NW) photodetector has been successfully synthesized by an aqueous solution method at low temperature (85 degrees C). The growth of ZnO NWs on a silicon substrate with a ZnO seeding layer exhibits single-phase wurtzite ZnO crystal structure, and grows along the c-axis direction. Furthermore, we have demonstrated the current-voltage characteristics and photoresponse of the ZnO NWs with and without UV (325 nm) illumination. Therefore, this low-temperature and simple fabrication process is a viable processing technique to selectively grow lateral ZnO NWs on a flat substrate of any material, with potential applications in flexible NW devices.