Browsing by Author "Lin, KM"

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Elastic interaction between screw dislocations and a circular surface crack
(1997-03-31)
Lin, KM
;
Lin, HC
;
Chen, KC
;
Chang, HL
;
材料科學與工程學系
The behaviour of a screw dislocation around a circular surface crack was analyzed using the conformal mapping method. The effects of the crack length l and its radius of curvature R on the shielding effect and the strain energy were discussed in detail. It was found that for a dislocation being fixed at a constant distance from the crack tip and located on a plane tangent to crack surface at the tip, there exists a critical crack length l* corresponding to a maximum shielding effect induced by the dislocation on the circular surface crack. The l* increases with R and approaches infinity as the crack becomes planar (i.e. R --> infinity). The shielding effect vanishes as the crack disappears. It increases rapidly with l if 0 < l much less than l*, regardless of R. After reaching the maximum, it decreases slightly for larger R but significantly for smaller R as the crack becomes longer. The shielding is more pronounced for larger R than that for smaller R, with the difference increasing with crack length. As a result, a surface microcrack propagates initially in a rather brittle manner then becomes more ductile. When the crack gets longer, it still keeps ductile for a less curved or a planar crack but becomes relatively brittle for a severely curved crack. In addition, the strain energy is also significantly influenced by crack length and increases rapidly with l when l is rather small, regardless of R. With increasing l, it becomes less affected by l, and the variation with R is still not obvious, with larger R corresponding to a slightly higher strain energy. (C) 1997 Elsevier Science S.A.
Elastic interaction between screw dislocations and a circular surface crack
(1997-03-31)
Lin, KM
;
Lin, HC
;
Chen, KC
;
Chang, HL
;
材料科學與工程學系
The behaviour of a screw dislocation around a circular surface crack was analyzed using the conformal mapping method. The effects of the crack length l and its radius of curvature R on the shielding effect and the strain energy were discussed in detail. It was found that for a dislocation being fixed at a constant distance from the crack tip and located on a plane tangent to crack surface at the tip, there exists a critical crack length l* corresponding to a maximum shielding effect induced by the dislocation on the circular surface crack. The l* increases with R and approaches infinity as the crack becomes planar (i.e. R --> infinity). The shielding effect vanishes as the crack disappears. It increases rapidly with l if 0 < l much less than l*, regardless of R. After reaching the maximum, it decreases slightly for larger R but significantly for smaller R as the crack becomes longer. The shielding is more pronounced for larger R than that for smaller R, with the difference increasing with crack length. As a result, a surface microcrack propagates initially in a rather brittle manner then becomes more ductile. When the crack gets longer, it still keeps ductile for a less curved or a planar crack but becomes relatively brittle for a severely curved crack. In addition, the strain energy is also significantly influenced by crack length and increases rapidly with l when l is rather small, regardless of R. With increasing l, it becomes less affected by l, and the variation with R is still not obvious, with larger R corresponding to a slightly higher strain energy. (C) 1997 Elsevier Science S.A.
Electrical properties of diamond films grown at low temperature
(1995-12-01)
Chen, CF
;
Chen, SH
;
Lin, KM
;
交大名義發表
;
材料科學與工程學系
The unique electronic properties of diamond, associated with the emergence of chemical vapour deposition (CVD) methods for the growth of thin films on non-diamond substrates, have led to considerable interest in electronic devices fabricated from this material. In our previous work, we found that polycrystalline diamond films can be deposited at 250 degrees C using CH4-CO2 gas mixtures. Studying the electrical properties and the upcoming problems of applications of low-temperature diamond films are relevant concerns. In this work, the electrical properties of diamond films grown at low temperatures were studied and compared with those of conventional diamond films. Platinum was used as the upper electrode. The resistivity of low-temperature diamond was around three orders of magnititude lower than that of conventional diamond. However, both the low temperature and conventional growth diamond exihibited rectifying behavior when platinum was used as the upper electrode.