Browsing by Author "Lin, Kuan-Heng"

Now showing 1 - 4 of 4

Stable and Efficient Organic Light Emitting Diodes Based on a Single Host of p-doped and n-doped Layers
(2009)
Ho, Meng-Huan
;
Hsieh, Ming-Ta
;
Chen, Jenn-Fang
;
Lin, Kuan-Heng
;
Chen, Chin H.
A power-efficient and stable organic light emitting diode with a simplified structure based on 2-methyl-9, 10-di(2-naphthyl)anthracene (MADN) has been developed. The incorporation of 10% tungsten oxide (WO(3)) into MADN and 15% cesium carbonate (Cs2CO(3)) into MADN has been found to improve the hole and electron injection, respectively. Based on this work, it is anticipated that p-i-n OLEDs fabrication process can be considerably simplified and the bill of materials cost can reduced by using one ambipolar host for both the p- and n-doped carrier transport layers.
Study of efficient and stable organic light-emitting diodes with 2-methyl-9,10-di(2-naphthyl)anthracene as hole-transport material by admittance spectroscopy
(2009-01-12)
Ho, Meng-Huan
;
Hsieh, Ming-Ta
;
Lin, Kuan-Heng
;
Chen, Teng-Ming
;
Chen, Jenn-Fang
An organic light-emitting device with enhanced efficiency sby employing 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) as hole-transport material (HTM) has been developed. The admittance spectroscopy studies indicate that using MADN as HTM can reduce the amount of hole carriers injected into the device leading to a well-balanced carrier recombination. The green fluorescent 10-(2-benzothiazolyl)-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H,11H-benzo[l]pyrano-[6,7,8-ij]quinolizin-11-one doped tris(8-quinolinolato)aluminum device achieved a current efficiency of 21.8 cd/A and a power efficiency of 10.4 lm/W at 20 mA/cm(2) that are 65% higher than those of the control device. The green-doped device also achieved a long half-decay lifetime of 22 000 h at an initial brightness of 500 cd/m(2).
Study of electric characteristics and diffusion effects of 2-methyl-9,10-di(2-naphthyl)anthracene doped with cesium fluoride by admittance spectroscopy
(2010-03-29)
Hsieh, Ming-Ta
;
Ho, Meng-Huan
;
Lin, Kuan-Heng
;
Chen, Jenn-Fang
;
Chen, Teng-Ming
In this work, the admittance spectroscopy studies show that doping cesium fluoride (CsF) into 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) can greatly decrease the resistance of MADN and raises the Fermi level from deep level to only 0.1 eV below the lowest unoccupied molecular orbital, resulting in enhancing the electron injection. In addition, the diffusion width of CsF from doped MADN layer into tris(8-quinolinolato)aluminium is clearly observed by capacitance-frequency measurement and is about 9.4 nm. Moreover, the diffusion width is significant to be affected by external thermal.
Study of electrical characterization of 2-methyl-9, 10-di(2-naphthyl)anthracene doped with tungsten oxide as hole-transport layer
(2009-07-20)
Hsieh, Ming-Ta
;
Ho, Meng-Huan
;
Lin, Kuan-Heng
;
Chen, Jenn-Fang
;
Chen, Teng-Ming
An efficient p-doped transport layer composed of an ambipolar material, 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) and tungsten oxide (WO(3)) has been developed. The admittance spectroscopy studies show that the incorporation of WO(3) into MADN can greatly improve the hole injection and the conductivity of the device. Moreover, when this p-doped layer was incorporated in the tris(8-quinolinolato)aluminum-based device, it achieved a current efficiency of 4.0 cd/A and a power efficiency of 2.4 lm/W at 20 mA/cm(2). This work paves the way to simplify the fabrication of future p-i-n organic light-emitting devices with a single common ambipolar MADN material.