Browsing by Author "Lin, Kun-Lin"

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A Promising Approach to the Synthesis of 3D Nanoporous Graphitic Carbon as a Unique Electrocatalyst Support for Methanol Oxidation
(2010)
Tiwari, Jitendra N.
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Tiwari, Rajanish N.
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Chang, Yun-Min
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Lin, Kun-Lin
;
材料科學與工程學系
A 3D nanoporous graphitic carbon (g-C) material is synthesized by using an adamantane (C(10)H(16)) flame, and utilized to support a Pt(50)-Ru(50) alloy catalyst. The physico-chemical properties of the Pt(50)-Ru(50)/3D nanoporous g-C electrode are examined by a range of spectroscopy techniques as well as Brunauer-Emmett-Teller surface area analysis. Cyclic voltammetry measurements are used for electrochemical characterization of the Pt(50)-Ru(50)/3D nanoporous g-C electrode. The electrochemical investigations show that the supported Pt(50)-Ru(50) has excellent activity and stability towards methanol electro-oxidation. Good CO tolerance is also shown, and considered to be due to the presence of Ru nanoparticles. It is proposed that Ru is able to promote the oxidation of strongly adsorbed CO on Pt by supplying an oxygen source: RU(OH)(ad). Moreover, the presence of 3D nanopores in the g-C support may also contribute to the observed higher current density by virtue of the easy transport of methanol and the oxidation products through these nanopores.
Amorphous-Layer Regrowth and Activation of P and As Implanted Si by Low-Temperature Microwave Annealing
(2011-07-01)
Hsueh, Fu-Kuo
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Lee, Yao-Jen
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Lin, Kun-Lin
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Current, Michael I.
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Wu, Ching-Yi
Microwave annealing of dopants in Si has been reported to produce highly activated junctions at temperatures far below those needed for comparable results using conventional thermal processes. However, the details of the kinetics and mechanisms for microwave annealing are far from well understood. In this paper, 20-keV arsenic (As) and 15-keV phosphorus (P) implants, in a dose range from 1 to 5 x 10(15) ion/cm(2), were annealed by microwave methods at temperatures below 500 degrees.C. These junctions were characterized by profile studies with secondary ion mass spectrometry and spreading resistance profiling, sheet resistance with four-point probe, and extensive use of cross-sectional transmission electron microscopy to follow the regrowth of the as-implanted amorphous layers created by the implantation. The amorphous-layer regrowth was observed to be uneven in time, with relatively little amorphous/crystalline interface motion for less than 50 s, followed by rapid regrowth for longer times. Sheet resistance values continued to drop for anneal times after the regrowth process was complete, with some evidence of dopant deactivation for anneal times of 600 s.
Diamond-shaped Ge and Ge0.9Si0.1 Gate-All-Around Nanowire FETs with Four {111} Facets by Dry Etch Technology
(2015)
Lee, Yao-Jen
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Hou, Fu-Ju
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Chuang, Shang-Shiun
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Hsueh, Fu-Kuo
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Kao, Kuo-Hsing
We propose a feasible pathway to scale the Ge MOSFET technology by using a novel diamond-shaped Ge and Ge0.9Si0.1 gate-all-around (GAA) nanowire (NW) FETs with four {111} facets. The device fabrication requires only simple top-down dry etching and blanket Ge epitaxy techniques readily available in mass production. The proposed dry etching process involves three isotropic/anisotropic etching steps with different Cl-2/HBr ratios for forming the suspended diamond-shaped channel. Taking advantages of the GAA configuration, favorable carrier mobility of the {111} surface, nearly defect-free suspended channel, and improved dopant activation by incorporating Si, nFET and pFET with excellent performance have been demonstrated, including an I-on/I-off ratio exceeding 10(8), the highest ever reported for Ge-based pFETs.
Direct Synthesis of Vertically Interconnected 3-D Graphitic Nanosheets on Hemispherical Carbon Particles by Microwave Plasma CVD
(2011-03-01)
Tiwari, Jitendra N.
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Tiwari, Rajanish N.
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Singh, Gyan
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Lin, Kun-Lin
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材料科學與工程學系
High-quality, free-standing, and vertically interconnected three-dimensional (3-D) graphitic nanosheets (GNSs) were synthesized over the surface of hemispherical carbon particles/GaN at 700 A degrees C by microwave plasma chemical vapor deposition (CVD) in presence of methane gas, whereas the hemispherical carbon particles have been directly deposited on GaN/sapphire template. The GNSs are similar to 1-5 nm in thickness and have a graphitic flake structure on hemispherical carbon particles. The vertically interconnected 3-D GNSs on hemispherical carbon particles have been characterized by scanning electron microscopy, transmission electron microscopy, selective area electron diffraction pattern, X-ray diffraction, atomic force microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, and nitrogen gas adsorption-Brunauer-Emmet-Teller. The present CVD approach is capable of producing large quantities of GNSs with high purity. Moreover, a high-purity free-standing and vertically interconnected 3-D GNSs on hemispherical carbon particles have an enormous potential for applications in electronic devices, biological sensors, gas uptake and storage, fuel cells, lithium ion batteries, and more.
Direct-bonded Al/Al2O3 using a transient eutectic liquid phase
(1970-01-01)
Cheng, Yun-Hsiang
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Lin, Chien-Cheng
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Lin, Kun-Lin
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材料科學與工程學系
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Department of Materials Science and Engineering
Directed bonding with Al and Al2O3 was achieved using a transient liquid phase (TLP) method after annealing at the low melting point of Al, which deposited Ni, Cu, Ge, and Si on the Al2O3 substrate. Al/Al2O3 microstructures were evaluated using a scanning electron microscopy and transmission electron microscopy. A reaction layer was absent at the Al/Al2O3 interface, and all deposited metal films dissolved into the Al foil and reacted with Al to form an eutectic liquid phase near the interface to wet and join with the Al2O3. Al9Fe2 and Al3Fe intermetallic compounds were formed in the Al substrate because of Fe precipitation, which is an impurity of Al foil, and the reaction with Al at the grain boundaries of Al. The bonding area percentage, shear strength, and thermal conductivity for Al and Al2O3 were assessed using scanning acoustic tomography (SAT), the ISO 13 124 shear strength test, and the laser flash method, respectively. The Al/Al2O3 specimen deposited with the Ni film had the highest shear strength (33.74 MPa), thermal conductivity (42.3 W/mK), and bonding area percentage (96.78%). The Al/Al2O3 specimens deposited with Ge and Si exhibited relatively poor bonding because of the oxidation of Ge and Si at the surface of Al2O3 before bonding with Al.
Effect of yttria on interfacial reactions between titanium melt and hot-pressed yttria/zirconia composites at 1700 degrees C
(2008-07-01)
Lin, Chien-Cheng
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Chang, Yao-Wen
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Lin, Kun-Lin
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Lin, Kun-Fung
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材料科學與工程學系
Various Y(2)O(3)/ZrO(2) samples were fabricated by hot pressing, whereby Y(2)O(3) was mutually dissolved or reacted with ZrO(2) as a solid solution or Zr(3)Y(4)O(12). Hot-pressed samples were allowed to react with Ti melt at 1700 degrees C for 10 min in argon. Microstructural characterization was conducted using X-ray diffraction and analytical electron microscopy. The Y(2)O(3)/ZrO(2) samples became more stable with increasing Y(2)O(3) because Y(2)O(3) was hardly reacted and dissolved with Ti melt. The incorporation of more than 30 vol% Y(2)O(3) could effectively suppress the reactions in the Ti side, where only a very small amount of alpha-Ti and beta'-Ti was found. When ZrO(2) was dissolved into Ti on the zirconia side near the original interfaces, Y(2)O(3) reprecipitated in the samples containing 30%-70 vol% Y(2)O(3), because the solubility of Y(2)O(3) in Ti was very low. In the region far from the original interface, alpha-Zr, Y(2)O(3), and/or residual Zr(3)Y(4)O(12) were found in the samples containing more than 50 vol% Y(2)O(3) and the amount of alpha-Zr decreased with increasing Y(2)O(3).
Effects of annealing temperature on microstructural development at the interface between zirconia and titanium
(2007-03-01)
Lin, Kun-Lin
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Lin, Chien-Cheng
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材料科學與工程學系
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Department of Materials Science and Engineering
The interfacial reaction layers in the Ti/ZrO2 diffusion couples, isothermally annealed in argon at temperatures ranging from 1100 degrees to 1550 degrees C for 6 h, were characterized using scanning electron microscopy and transmission electron microscopy, both attached with an energy-dispersive spectrometer. Very limited reaction occurred between Ti and ZrO2 at 1100 degrees C. A beta'-Ti(Zr, O) layer and a two-phase alpha-Ti(O)+beta'-Ti(Zr, O) layer were found in the titanium side after annealing at T >= 1300 degrees C and T >= 1400 degrees C, respectively. A three-phase layer, consisting of Ti2ZrO+alpha-Ti(O, Zr)+beta'-Ti (O, Zr), was formed after annealing at 1550 degrees C. In the zirconia side near the original interface, beta'-Ti coexisted with fine spherical c-ZrO2-x, which dissolved a significant amount of Y2O3 in solid solution at T >= 1300 degrees C. Further into the ceramic side, the alpha-Zr was formed due to the exsolution of Zr out of the metastable ZrO2-x after annealing at T >= 1300 degrees C: the alpha-Zr was very fine and dense at 1300 degrees C, continuously distributed along grain boundaries at 1400 degrees C, and became coarsened at 1550 degrees C. Zirconia grains grew significantly at T >= 1400 degrees C, with the lenticular t-ZrO2-x being precipitated in c-ZrO2-x. Finally, the microstructural development and diffusion paths in the Ti/ZrO2 diffusion couples annealed at various temperatures were also described with the aid of the Ti-Zr-O ternary phase diagram.
Effects of partial pressure of oxygen on sintering of a ZrO2-30 mol% Ti powder mixture
(2017-07-01)
Lin, Kun-Lin
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Lin, Chien-Cheng
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材料科學與工程學系
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Department of Materials Science and Engineering
A powder mixture of ZrO2-30 mol% Ti was sintered at 1500 degrees C/h under various controlled partial pressures of oxygen (PaO2). The microstructure of each sintered sample was characterized using x-ray diffractometry and analytical transmission electron microscopy/energy-dispersive spectroscopy. TiO and highly oxygen-deficient zirconia were found after sintering at PaO2 similar to 2.1 x10(-4) atm, which implies that the oxidation reduction reaction is a controlling mechanism when there is a trace of residual oxygen. When the PaO2 was increased to 1.05x10(-1) atm, the dissolution of residual oxygen and nitrogen in the chamber into the titanium led to the formation of TiO(N) with nitrogen in solid solution. It was inferred that the oxygen in TiO(N) was also supplied by zirconia since the zirconia became oxygen-deficient in the sintered composites. After sintering in air (PaO2 similar to 2.1x10(-1) atm), TiO2 and TiN were formed along with nearly stoichiometric zirconia, indicating that oxygen and nitrogen in air played a major role in the oxidation and nitridization reaction of titanium. The degree of oxygen deficiency x in ZrO2-x decreased with increasing oxygen partial pressure, which led to an increased volume fraction of the monoclinic phase.
Electrocatalytic activity of Pt nanoparticles electrodeposited on amorphous carbon-coated silicon nanocones
(2010-02-01)
Tiwari, Jitendra N.
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Pan, Fu-Ming
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Chen, Te-Ming
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Tiwari, Rajanish N.
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Lin, Kun-Lin
This study pulse-electrodeposits Pt nanoparticles on amorphous carbon-coated silicon nanocones (ACNCs) and explores them as the electrocatalyst for methanol oxidation reaction (MOR) and oxygen reduction reaction (ORR) for direct methanol fuel cell applications. The work prepares silicon nanocones on the Si wafer using porous anodic aluminum oxide as the template and then deposits the amorphous carbon layer on the nanocones by microwave plasma chemical vapor deposition. According to Raman scattering and X-ray photoelectron spectroscopies (XPS), the surface of the ACNC support is composed of a nanocrystalline graphitic structure. and rich in oxygen-containing adspecies. The Pt nanoparticles pulse-electrodeposited on the highly ordered ACNC support disperses well with a large electrocatalytic surface area. The Pt/ACNC electrode exhibits excellent electrocatalytic activity and stability toward both MOR and ORR. This study suggests the abundant oxygen-containing surface species and the nanometer size of the Pt catalyst as the two major factors enhancing electrocatalytic performance of Pt/ACNC electrode. The XPS Study suggests the occurrence of charge transfer from pi-sites of the graphitic Structure to the Pt nanoparticle, thereby improving the electrochemical stability of the electrode. (C) 2009 Elsevier B.V. All rights reserved.
Facile approach to the synthesis of 3D platinum nanoflowers and their electrochemical characteristics
(2009)
Tiwari, Jitendra N.
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Pan, Fu-Ming
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Lin, Kun-Lin
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材料科學與工程學系
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Department of Materials Science and Engineering
Three-dimensional (3D) platinum nanoflowers have been successfully synthesized by potentiostatic pulse plating method on a silicon substrate, and electrochemical study shows that the nanostructured Pt catalyst has an excellent electrocatalytic activity toward methanol and CO oxidation due to preferential (100) and (110) surface orientations on the Pt nanoflowers.
Growth of GaN on Patterned Sapphire Substrate with High-Index Facets
(2015-01-01)
Chang, Sheng-Chieh
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Chen, Chien-Chih
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Chang, Tsu-Chi
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Lin, Kun-Lin
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Lu, Tien-Chang
Periodic pyramidal array patterned sapphire substrate (PSS) with various inclined facets was fabricated by wet etching. It was found that {3 (4) over bar 17}, {4 (1) over bar(3) over bar 18}, and {12 (3) over bar5} facets are exposed on the PSS structure after etching. GaN grown on the PSS by metal-organic chemical vapor deposition was found to have a semi-polar orientation by structural characterization with scanning and transmission electron microscopy. Also, the results show that GaN is mainly grown on the {12 (3) over bar5} sapphire facet with the orientation relationship between GaN and sapphire as(01 (1) over bar(4) over bar)(GaN) // (3 (3) over bar0 (6) over bar)(sapphire) and [02 (2) over bar1](GaN) // [11 (2) over bar0](sapphire), and the dislocation density in the grown GaN decreased with thickness. In addition, photoluminescence and catholuminescence measurements show only strong near-band-edge emission from the semi-polar GaN on the {12 (3) over bar5} sapphire facet. (C) 2015 The Electrochemical Society. All rights reserved.
Growth of GaN on {12(3)over-bar5}-like Facets of Patterned Sapphire Substrate
(2017-01-01)
Wu, Pei-Yu
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Chen, Chien-Chih
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Huang, Chia-Yen
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Kuo, Hao-Chung
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Lin, Kun-Lin
GaN has been grown on wet-etched patterned sapphire substrate (PSS) by metal-organic chemical vapor deposition. It has been found that GaN was initiated not only from bottom c-facet but also from E {12 (3) over bar5} facets of hexagonal patterns/pyramids. In this study, a vacancy-PSS on c-plane sapphire was used to investigate the growth of GaN on the E-like facets (E1 and E2) of distorted pyramids. The results show that the orientation relationship between E1-GaN and sapphire is ((11) over bar2 (6) over bar) GaN // ((1) over bar 10 (2) over bar)(sapphire) and [11 (21) over bar] GaN // [11 (2) over bar0](sapphire). At the same time, that between E2-GaN and sapphire is (01 (14) over bar) GaN // (3 (3) over bar0 (6) over bar) sapphire and [02 (2) over bar1] GaN // [11 (2) over bar0] sapphire. (C) 2017 The Electrochemical Society. All rights reserved.
High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
(2017-05-02)
Wu, Tsung-Ta
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Huang, Wen-Hsien
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Yang, Chih-Chao
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Chen, Hung-Chun
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Hsieh, Tung-Ying
Development of manufacture trend for TFTs technologies has focused on improving electrical properties of films with the cost reduction to achieve commercialization. To achieve this goal, high-performance sub-50 nm TFTs-based MOSFETs with ON-current (I-on)/subthreshold swing (S.S.) of 181 mu A/mu m/107 mV/dec and 188 mu A/mu m/98 mV/dec for NMOSFETs and PMOSFETs in a monolithic 3D circuit were demonstrated by a low power with low thermal budget process. In addition, a stackable static random access memory (SRAM) integrated with TFTs-based MOSFET with static noise margins (SNM) equals to 390 mV at V-DD = 1.0 V was demonstrated. Overall processes include a low thermal budget via ultra-flat and ultra-thin poly-Si channels by solid state laser crystallization process, chemical-mechanical polishing (CMP) planarization, plasma-enhanced atomic layer deposition (ALD) gate stacking layers and infrared laser activation with a low thermal budget. Detailed material and electrical properties were investigated. The advanced 3D architecture with closely spaced inter-layer dielectrics (ILD) enables high-performance stackable MOSFETs and SRAM for power-saving IoT/mobile products at a low cost or flexible substrate.
High Performance Poly Si Junctionless Transistors with Sub-5nm Conformally Doped Layers by Molecular Monolayer Doping and Microwave Incorporating CO2 Laser Annealing for 3D Stacked ICs Applications
(2015)
Lee, Yao-Jen
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Cho, Ta-Chun
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Sung, Po-Jung
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Kao, Kuo-Hsing
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Hsueh, Fu-Kuo
A junctionless (JL) fin thin film transistor (FinTFT) with a novel shell doping profile (SDP) formed by a damage-free conformal molecular monolayer doping (MLD) method and a combination of microwave annealing (MWA) and CO2 laser spike annealing (COLSA) is demonstrated and studied. MWA drives in and partially activates the MLD dopants; the resultant SDP features an ultra-shallow depth (< 5nm) and an abrupt steepness (< 0.8 nm/dec). The dopant activation of the devices experienced MLD and MWA is further enhanced by the nonmelting COLSA without dopant diffusion, and which can also avoid fin deformation and recover surface defects left by fin patterning. Thanks to the enhanced dopant activation by COLSA, the SDP-FinTFTs overall exhibit better performance than the SDP-FinTFTs without COLSA and the conventional implanted (imp) FinTFTs in terms of subthreshold swing (S.S.), on-currents (I-on by 160% compared to the SDP-FinTFTs without COLSA) and on/off current ratio (I-on/I-off > 10(7)) for 3D stacked ICs applications. Our results reveal the potential of the proposed SDP formed by MLD, MWA and COLSA enabling a JLFinTFT showing excellent performance.
Interfacial and mechanical characterization of yttria-stabilized zirconia (YSZ) to stainless steel joints fabricated using Ag-Cu-Ti interlayers
(2014-01-01)
Lin, Kun-Lin
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Singh, Mrityunjay
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Asthana, Rajiv
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Lin, Chao-Hsien
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影像與生醫光電研究所
An Ag-26.7Cu-4.5Ti metallic interlayer was used to join yttria-stabilized zirconia (YSZ) and stainless steel for solid oxide fuel cell (SOFC) applications. Scanning electron microscopy (SEM), transmission electron microscopy (TEM), and energy dispersive spectroscopy (EDS) were used to characterize the joint microstructure. The bond strength and hermeticity of steel/metallic interlayer/YSZ joints were also evaluated. TEM analysis revealed that the Fe from the steel reacted with Ti of the interlayer to form Fe2Ti near the steel/Ag-26.7Cu-4.5Ti interface. At the Ag-26.7Cu-4.5Ti interlayer/YSZ interface, Ti2O3 and Fe2Ti4O reaction layers formed near the YSZ and the interlayer, respectively. While titanium reacted with oxygen from YSZ to form titanium oxide (Ti2O3), Fe diffused toward the YSZ to react with titanium oxide to form the Fe2Ti4O layer. The tensile and shear strengths of the joints, evaluated according to "ISO 13124" test method, were 16.7 +/- 4.8 and 40.2 +/- 8.2 MPa, respectively. Nano-indentation hardness was characterized across the steel/Ag-26.7Cu-4.5Ti interlayer/YSZ joint. The hermeticity of the joint was measured by using He leakage tests. The leak rate of the joined assembly was 1.5 +/- 1.1 x 10(-9) mbar l/s, indicating good hermeticity of joints. (C) 2013 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
Interfacial reactions between Ti and Y2O3/Ca4Ti3O10 composites
(1970-01-01)
Lu, Ming-Wei
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Lin, Kun-Lin
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Lin, Chien-Cheng
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材料科學與工程學系
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Department of Materials Science and Engineering
In titanium casting, the interfacial reactions between selected Y2O3/Ca4Ti3O10 composites in contact with titanium at 1600 degrees C for 30 minutes in an argon environment were characterized using X-ray diffraction, scanning electron microscopy, and analytical transmission electron microscopy. Before contact with titanium, reaction phases of the Y2O3/Ca4Ti3O10 composites formed through hot pressing at 1500 degrees C or annealing at 1600 degrees C. These phases were identified as Ca4Ti3O10, Y2O3, and minor amounts of CaO. The amount of Ca4Ti3O10 in the composites gradually decreased as the amount of Y2O3 increased. When the Y2O3/Ca4Ti3O10 composites were in contact with titanium, a reaction layer of alpha-Ti and Y2O3 was formed near the interface of the composite side. Large amounts of calcium and oxygen were expelled toward the composite side from Ca4Ti3O10 near the interface to form CaO, which precipitated in the Ca4Ti3O10 and Y2O3 phases. Furthermore, no reaction phases were detected in titanium. Ca4Ti3O10 and Y2O3 can function as diffusion barrier layers to effectively suppress the diffusion of oxygen into titanium.
Investigation of the interactions between titanium and calcium zirconium oxide (CaZrO3) ceramics modified with alumina
(2019-01-01)
Lu, Ming-Wei
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Lin, Kun-Lin
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Lin, Chien-Cheng
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材料科學與工程學系
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Department of Materials Science and Engineering
Powdered mixtures of CaO, ZrO2 and Al2O3 in various ratios were hot pressed. The mixtures reacted with titanium at 1600 degrees C for 30 min in argon to evaluate the suitable ceramic crucibles for casting of titanium. The interfacial microstructures between titanium and ceramic composites were characterized using X-ray diffractometer, scanning and transmission electron microscope. The produced hot pressed mixtures that were chemically bonded together, contained calcium aluminate (CaAl2O4), calcium dialuminate (CaAl4O7), cubic zirconia (c-ZrO2), and calcium zirconium oxide (CaZrO3). The increase in Al2O3 amount led to the decrease in CaZrO3 amount and an increase in the amount of CaAl2O4, CaAl4O7 and c-ZrO2 due to the reaction of CaO and Al2O3. At the end of the reaction of the ceramic mixtures with Ti at 1600 degrees C for 30 min, the acicular alpha-Ti and beta'-Ti were formed at the interface of Ti and the composites containing up to 10 vol.% Al O-2(3). In composites containing more than 20 vol.% Al2O3, Ti3Al5 was found at the interface instead of alpha-Ti and beta'-Ti. Furthermore, CaZrO3, ZrO2 and Ca3Al2O6 existed on the sides of the ceramic far away from the interface. CaZrO3/Al2O3 composites with less than 20 vol.% Al2O3 could be a potential crucible or mould material for productive applications in titanium casting.
Microstructural Characterization of Multilayer Metal Stack on InGaAs/InP Contact
(2020-08-01)
Hsu, Chih-Lin
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Wu, Yewchung Sermon
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Chen, Szu-Hung
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Lin, Kun-Lin
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材料科學與工程學系
Al/InGaAs, Al/Ti/InGaAs, and Al/Ni/InGaAs contacts were prepared by conducting rapid thermal annealing at different temperatures, and the interfacial reaction was characterized using x-ray diffraction, atomic force microscopy, and transmission electron microscopy. The specific contact resistivity of the metal film contacts onn-InGaAs was determined using a circular transmission line measurement. The Al/Ni/InGaAs, Al/Ti/InGaAs, and Al/InGaAs stack contacts remained stable even after the samples were subjected to annealing at 400 degrees C. When the annealing temperature increased to 600 degrees C, Al began melting and clustering due to the formation of Al(Ga) to form Al/InGaAs. An AlNi phase was formed at the interfaces of an Al/Ni/InGaAs contact when it was annealed above 400 degrees C, thus causing the specific resistance and roughness to increase dramatically. Each element of the Al/Ti/InGaAs contact began diffusing when it was annealed beyond 400 degrees C, and an Al3Ti phase was formed above 500 degrees C. The formation of Al3Ti led to the increase in the specific resistance and roughness. Moreover, the as-deposited Al/Ni/InGaAs, Al/Ti/InGaAs and Al/InGaAs samples had specific resistances of 1.11 x 10(-5) omega cm(2), 5.11 x 10(-5) omega cm(2), and 1.14 x 10(-4) omega cm(2), respectively. These results reveal that to develop the Al/Ti/InGaAs and Al/Ni/InGaAs stacks on InGaAs with a low parasitic resistance, the processing temperature should be lower than 400 degrees C.
Monolithic 3D SRAM-CIM Macro Fabricated with BEOL Gate-All-Around MOSFETs
(2019-01-01)
Hsueh, Fu-Kuo
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Lee, Chun-Ying
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Xue, Cheng-Xin
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Shen, Chang-Hong
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Shieh, Jia-Min
For the first time, below 400 degrees C-fabricated gate-all-around (GAA) transistor fabrication process was demonstrated with monolithic computing-in-memory (CIM) circuit. Key enablers are plasma-assisted atomic layer etching (PA-ALE), plasma immersion ion implantation (PIII) and far-infrared laser activation (FIR-LA). The 3D stackable single-grained Si GAA MOSFETs thus fabricated exhibit record-high I-on/I-off ratio (similar to 10(8)) with low I-off (pFETs<10(-2) nA/mu m). Moreover, the stackability of the GAA MOSFETs and the differential output of dual-mode 10T SRAM readout enable 2x throughput in the CIM circuitry.
Ordered silicon nanocones as a highly efficient platinum catalyst support for direct methanol fuel cells
(2008-08-01)
Tiwari, Jitendra N.
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Chen, Te-Ming
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Pan, Fu-Ming
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Lin, Kun-Lin
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材料科學與工程學系
Platinum nanoparticles were electrodeposited on ordered silicon nanocones (SNCs) and used as the catalyst for methanol electro-oxidation in direct methanol fuel cells (DMFCs). Because of uniform dispersion of Pt nanoparticles and the high surface area, the Pt-SNC electrode exhibited superior electrocatalytic properties toward the methanol electro-oxidation, with the onset potential of 0.08 V (vs. SCE). According to chronoamperometric analysis and CO stripping cyclic voltammetric (CV) study, the Pt/SNC electrode had a stable electro-oxidation activity with a very good CO tolerance. The Si surface oxide surrounding the Pt nanoparticles on the SNCs was suggested to play a key role in improving the CO tolerance via the bifunctional mechanism. (c) 2008 Elsevier B.V. All rights reserved.