Browsing by Author "Lin, Kung Liang"

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High-Quality 1 eV In(0.3)Ga(0.7)As on GaAs Substrate by Metalorganic Chemical Vapor Deposition for Inverted Metamorphic Solar Cell Application
(2011-07-01)
Hong Quan Nguyen
;
Chang, Edward Yi
;
Yu, Hung Wei
;
Lin, Kung Liang
;
Chung, Chen Chen
In(0.3)Ga(0.7)As layers were grown by metalorganic chemical vapor deposition using step graded buffer layers on different misoriented GaAs(001) substrates. Smooth-surface In(0.3)Ga(0.7)As film with a root mean square roughness of 1.9 nm was obtained with the growth temperature of 490 degrees C using a 10-step graded parabolic-like indium profile buffer layer on the surface with the 6 degrees-off cut toward the [111] direction. The threading dislocation density in the film was determined to be 1.2 x 10(6) cm(-2) by transmission electron microscopy. The photoluminescence results obtained at 300 and 77K indicate that very low recombination centers existed in the epilayer. (C) 2011 The Japan Society of Applied Physics
High-Quality 1 eV In0.3Ga0.7As on GaAs Substrate by Metalorganic Chemical Vapor Deposition for Inverted Metamorphic Solar Cell Application
(2011-07-01)
Hong Quan Nguyen
;
Chang, Edward Yi
;
Yu, Hung Wei
;
Lin, Kung Liang
;
Chung, Chen Chen
In0.3Ga0.7As layers were grown by metalorganic chemical vapor deposition using step graded buffer layers on different misoriented GaAs(001) substrates. Smooth-surface In0.3Ga0.7As film with a root mean square roughness of 1.9 nm was obtained with the growth temperature of 490 degrees C using a 10-step graded parabolic-like indium profile buffer layer on the surface with the 6 degrees-off cut toward the [111] direction. The threading dislocation density in the film was determined to be 1.2 x 10(6) cm(-2) by transmission electron microscopy. The photoluminescence results obtained at 300 and 77K indicate that very low recombination centers existed in the epilayer. (C) 2011 The Japan Society of Applied Physics
InGaP/GaAs Dual-Junction Solar Cell with AlGaAs/GaAs Tunnel Diode Grown on 10 degrees off Misoriented GaAs Substrate
(2012-08-01)
Yu, Hung Wei
;
Chung, Chen Chen
;
Wang, Chin Te
;
Hong Quan Nguyen
;
Binh Tinh Tran
InGaP/GaAs dual-junction solar cells with different tunnel diodes (TDs) grown on misoriented GaAs substrates are investigated. It is demonstrated that the solar cells with P++-AlGaAs/N++-GaAs TDs grown on 10 degrees off GaAs substrates not only show a higher external quantum efficiency (EQE) but also generate a higher peak current density (J(peak)) at higher concentration ratios (185 x) than the solar cells with P++-GaAs/N++-InGaP TDs grown on 6 degrees off GaAs substrates. Furthermore, the cell design with P++-AlGaAs/N++-GaAs TDs grown on 10 degrees off GaAs substrates does not generate a disordered InGaP epitaxial layer during material growth, and thus shows superior current-voltage characteristics. (c) 2012 The Japan Society of Applied Physics