Browsing by Author "Lin, KungLiang"

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Effect of Graded AlxGa1-xN Interlayer Buffer on the Strain of GaN Grown on Si (111) Using MOCVD Method
(2008)
Lin, KungLiang
;
Chang, Edward-Yi
;
Li, Tingkai
;
Huang, Wei-Ching
;
Hsiao, Yu-Lin
GaN film grown on Si substrate with AlN/AlxGa1-xN buffer is studied by low pressure metal organic chemical vapor deposition (MOCVD) method. The AlxGa1-xN film with Al composition varying from 0 similar to 0.66 was used. The correlation of the Al composition in the AlxGa1-xN film with the stress of the GaN film grown was studied using high resolution X-ray diffraction including symmetrical and asymmetrical omega/2 theta scans and reciprocal space maps. It is found that with proper design of the Al composition in the AlxGa1-xN buffer layer, crack-free GaN films can be successfully grown on Si (111) substrates using AlN and AlxGa1-xN buffer layers.