Browsing by Author "Lin, L. F."

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Cu/CuMg gate electrode for the application of hydrogenated amorphous silicon thin-film transistors
(2007)
Wang, M. C.
;
Chang, T.-C.
;
Liu, Po-Tsun
;
Li, Y. Y.
;
Xiao, R. W.
The feasibility of using Cu/CuMg as a gate electrode for a-Si:H thin-film transistors (TFTs) has been investigated in this work. The issue of adhesion between the Cu film and glass substrates has been overcome by introducing the Cu/CuMg alloy. Furthermore, a wet-etching process of Cu-based gate metal has been proposed by using the copper etchant in the conventional printed circuit boards. The experimental result showed superior performance of a-Si:H TFT with desired electrode taper angle and minimal loss of critical dimension. The a-Si:H TFT exhibited mobility of 0.37 cm(2)/V s, subthreshold slope of 0.83 V/dec, and V(th) of 2.02 V.
n(+)-doped-layer-free microcrystalline silicon thin film transistors fabricated with the CuMg as source/drain metal
(2007-07-09)
Wang, M. C.
;
Chang, T. C.
;
Liu, Po-Tsun
;
Xiao, R. W.
;
Lin, L. F.
The feasibility of using CuMg as source/drain metal electrodes for n(+)-doped-layer-free microcrystalline silicon thin film transistors (mu-Si:H TFTs) has been investigated. The Ohmic-contact characteristic has been achieved by using the CuMg alloy as source/drain metal. Furthermore, a wet etching process of Cu alloy source/drain metal has been completed by using the ferric chloride base etchant. The proposed mu-Si:H TFT has shown similar electrical characteristic with the mu-Si:H TFT with n(+)-doped layer. The experimental result also showed that the CuMg alloy was suitable for the replacement of n(+)-doped layer in thin film transistor liquid-crystal displays. (C) 2007 American Institute of Physics.
Schottky barrier height for the photo leakage current transformation of a-Si : H TFTs
(2007)
Wang, M. C.
;
Chang, T. C.
;
Liu, Po-Tsun
;
Li, Y. Y.
;
Xiao, R. W.
For effectively reducing the off-state signal loss resulting from the a-Si: H thin film transistors' (TFTs) photo leakage current, the a-Si: H TFTs with the use of indium tin oxide as source-drain metal have been fabricated for this study. A remarkable transformation in photo leakage current has been observed under the 3300 cd/m(2) cold cathode fluorescent lamp (CCFL) backlight illumination. The source-drain barrier height engineering has been proposed for this study. According to the energy band diagram, the barrier height for hole is estimated to be about 3 eV. As a result, the photogeneration holes blocked in the Schottky barrier could effectively result in the different characteristic of photo leakage current. (c) 2007 The Electrochemical Society.
Suppression of Schottky leakage current in island-in amorphous silicon thin film transistors with the Cu/CuMg as source/drain metal
(2007-08-06)
Wang, M. C.
;
Chang, T. C.
;
Liu, Po-Tsun
;
Xiao, R. W.
;
Lin, L. F.
The feasibility of using Cu/CuMg as a source/drain metal for the island-in amorphous silicon thin film transistors (a-Si:H TFTs) has been investigated. The issue of adhesion between the Cu film and n(+)-a-Si layer has been overcome by introducing the Cu/CuMg alloy. Furthermore, the suppression of Schottky leakage current in metal/a-Si:H structure was also observed in the island-in a-Si:H TFT. The island-in a-Si:H TFT exhibited the mobility of 0.52 cm(2)/V s, the subthreshold slope of 0.78 V/decade, and the V-th of 3.02 V. The experimental result also showed superior performance of the a-Si:H TFT with minimal loss of critical dimension and good thermal stability.