Browsing by Author "Lin, Li-Chien"

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Temperature-dependent electroluminescence from GeSn heterojunction light-emitting diode on Si substrate
(2016-04-01)
Chang, Chiao
;
Li, Hui
;
Huang, Ssu-Hsuan
;
Lin, Li-Chien
;
Cheng, Hung-Hsiang
The electroluminescence from a Ge/GeSn/Ge p-i-n light-emitting diode on Si was investigated under different temperatures ranging from 25 to 150 K. The diode was operated at a low injection current density of 13A/cm(2). We obtained no-phonon-and phonon-assisted replicas in emission spectra. Also, the relationship between indirect bandgap energy and temperature was investigated. The temperature-dependent bandgap energy followed Varshni's empirical expression with alpha = 4.884 x 10(-4) eV/K and beta = 130 K. (C) 2016 The Japan Society of Applied Physics
Temperature-dependent electroluminescence from GeSn heterojunction light-emitting diode on Si substrate
(2016-04)
Chang, Chiao
;
Li, Hui
;
Huang, Ssu-Hsuan
;
Lin, Li-Chien
;
Cheng, Hung-Hsiang
The electroluminescence from a Ge/GeSn/Ge p-i-n light-emitting diode on Si was investigated under different temperatures ranging from 25 to 150 K. The diode was operated at a low injection current density of 13A/cm(2). We obtained no-phonon-and phonon-assisted replicas in emission spectra. Also, the relationship between indirect bandgap energy and temperature was investigated. The temperature-dependent bandgap energy followed Varshni\'s empirical expression with alpha = 4.884 x 10(-4) eV/K and beta = 130 K. (C) 2016 The Japan Society of Applied Physics