Browsing by Author "Lin, Liang-Yu"

Now showing 1 - 4 of 4

Communication-driven task binding for multiprocessor with latency insensitive Network-on-Chip
(2005)
Lin, Liang-Yu
;
Wang, Cheng-Yeh
;
Huang, Pao-Jui
;
Chou, Chih-Chieh
;
Jou, Jing-Yang
Network-on-Chip is a new design paradigm for designing core based System-on-Chip. It features high degree of reusability and scalability. In this paper, we propose a switch which employs the latency insensitive concepts and applies the round-robin scheduling techniques to achieve high communication resource utilization. Based on the assumptions of the 2D-mesh network topology constructed by the switch, this work not only models the communication and the contention effect of the network, but develops a communication-driven task binding algorithm that employs the divide and conquer strategy to map applications onto the multiprocessor system-on-chip. The algorithm attempts to derive a binding of tasks such that the overall system throughput is maximized. To compare with the task binding without consideration of communication and contention effect, the experimental results demonstrate that the overall improvement of the system throughput is 20% for 844 test cases.
Fabrication of high-performance, low-temperature solution processed amorphous indium oxide thin-film transistors using a volatile nitrate precursor
(2015-01-01)
Choi, Chang-Ho
;
Han, Seung-Yeol
;
Su, Yu-Wei
;
Fang, Zhen
;
Lin, Liang-Yu
In this study, we fabricate amorphous indium oxide thin film transistors (TFTs) on a display glass substrate at various annealing temperatures from 200 degrees C to 300 degrees C. Using a volatile nitrate precursor, we were able to fabricate TFTs with excellent device performance within this annealing temperature range. Amorphous In2O3 films could be obtained by carefully controlling the film thickness and annealing temperature. TFTs based on amorphous In2O3 channel layers with an average mobility as high as 7.5 cm(2) V-1 s(-1), an I-on/I-off ratio of 10(7), and V-on = -5 V could be fabricated at 300 degrees C annealing temperature in air. The devices prepared at 200 degrees C still exhibit transistor characteristics with an average mobility of 0.04 cm(2) V-1 s(-1), an Ion/Ioff ratio of 10(5), and V-on = 0 V. The temperature effects on the device performances are elucidated based on X-ray photoelectron spectroscopy and thermal gravimetric analysis characterization results of precursors and the resulting amorphous In2O3 thin films.
Hierarchical Architecture for Network-on-Chip Platform
(2009)
Lin, Liang-Yu
;
Lin, Huang-Kai
;
Wang, Cheng-Yeh
;
Van, Lan-Da
;
Jou, Jing-Yang
In this paper, we propose one hierarchical 2-D mesh Network-on-Chip (NoC) platform to support applications with the complexity of several hundreds of tasks or with huge amount of transmission data. Moreover, applying the task binding method by considering communication amount, communication data contention and bandwidth penalty to enhance the system overall performance of the new architecture. Modeling the NoC system data transmission behavior at system level is applied to predict system overall performance and an automatic NoC system performance simulation too] is also built. Therefore, architecture and designer.,; can predict the system performance and obtain all parameters of the designed platform at system abstraction level. The experimental results show that the overall system throughput, the latency, and the saving of redundant transactions are improved by 27%. 14.4% and 21.8% respectively under the communication dominated situation.
The effects of gallium on solution-derived indium oxide-based thin film transistors manufactured on display glass
(2015-01-01)
Choi, Chang-Ho
;
Su, Yu-Wei
;
Lin, Liang-Yu
;
Cheng, Chun-Cheng
;
Chang, Chih-hung
Metal oxide semiconductor TFTs have been considerably investigated as a promising alternative to hydrogenated amorphous silicon and organic semiconductors. While many multicomponent oxide TFTs have been studied, there are only a few reports of TFTs using amorphous indium gallium oxide channel layers. In this study, the effects of gallium atomic ratio on the performance of solution-derived indium oxide-based TFTs on display glass were investigated for the first time. The morphological, optical, and electrical properties of IGO channel layers with different gallium atomic ratios were characterized. IGO TFTs with various chemical compositions were compared and interpreted based on the analysis of In3d, Ga2p, and O1s XPS data. It was found that gallium dopant suppresses the generation of oxygen vacancies, while promoting the formation of oxygen in the oxide lattice without oxygen vacancies by reducing the density of hydroxides. By adjusting the atomic ratio of gallium, we were able to fabricate IGO TFTs on display glass with an average field-effect mobility as high as 6.1 cm(2) V-1 s(-1), V-on = -2 V, and on-off ratio of 10(7).