Browsing by Author "Lin, M. T."

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Effects of length scaling on electromigration in dual-damascene copper interconnects
(2008-04-01)
Lin, M. H.
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Lin, M. T.
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Wang, Tahui
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
The electromigration short-length effect in dual-damascene Cu interconnects has been investigated through experiments on lines of various lengths (L), being stressed at a variety of current densities (j), and using a technologically realistic three-level structure. This investigation represents a complete study of the short-length effect after a well-developed dual-damascene Cu process. Lifetime measurement and resistance degradation as a function of time were used to describe this phenomenon. It has been found that the sigma of log-normal distribution increased as the current density-length product decreased. The statistical distribution of the critical volume fits the sigma curve well. Lower jL(2) values show large sigma values because of back-stress-induced TTF (time-to-fail) dispersion. A simplified equation is proposed to analyze the experimental data from various combinations of current density and line length at a certain temperature. The resulting threshold-length product (jL)(C) value appears to be temperature dependent, decreasing with an increase in temperature in a range of 250-300 degrees C. (c) 2007 Elsevier Ltd. All rights reserved.