Browsing by Author "Lin, MT"

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Ferromagnetic behavior of a triplet superconductor
(1999-04-15)
Knigavko, A
;
Rosenstein, B
;
Chen, YF
;
Huang, HL
;
Lin, MT
Properties of a type II triplet superconductor with equal spin pairing are investigated using the phenomenological Ginzburg-Landau approach. It is shown that there exist two kinds of fluxons: vortices and magnetic skyrmions. Vector nature of the order parameter allows a direct coupling of the effective spin of the condensate to a magnetic field. This coupling, which is reminiscent to Zeeman interaction in the form, significantly modifies the structure of an isolated vortex, as compared to the usual Abrikosov vortex, and changes the energetics of a vortex lattice. If the coupling is sufficiently strong, then magnetization of the triplet superconductor becomes positive at high magnetic fields. Formation of spontaneous vortex state is also possible. (C) 1999 American Institute of Physics. [S0021-8979(99)55408-X].
In-situ O-2-plasma passivation effect on poly-Si TFTs during ion plating capping oxide
(1997)
Yeh, CF
;
Chen, TJ
;
Lin, MT
;
Kao, JS
;
交大名義發表
A novel method has been developed to effectively reduce defect density in poly-Si thin-film transistors (TFTs) using ion plating (IF) oxides as capping layers. The characteristics of TFTs with TP capping oxides are superior to those of TFTs with TEOS capping oxides due to the in-situ O-2-plasma passivation effect during IP oxide deposition. The hydrogenation effect on the novel devices is not very evident because their trap-state density has been reduced by O-2 plasma. poly-Si TFTs with IP capping oxides still maintain good performance even stressing at 100 degrees C with a bias of 20 V.
O-2-plasma passivation effects on polysilicon thin film transistors using ion plating method
(1998-01-01)
Yeh, CF
;
Chen, TJ
;
Lin, MT
;
Kao, JS
;
電子工程學系及電子研究所
A novel method has been developed for efficiently reducing defect density in polysilicon thin film transistors using ion plated oxides as capping layers. The characteristics of these novel thin film transistors are superior to those of thin film transistors with plasma-enhanced chemical vapor deposited tetraethylorthosilicate capping oxides due to an in situ O-2-plasma passivation effect during ion plating oxide deposition. The passivation effect of a NH3 plasma on the novel devices was also studied. The in situ ion plating O-2 plasma shows a better passivation efficiency on trap states than the NH3 plasma. Polysilicon thin film transistors with ion plating capping oxides are hardly degraded even when stressed with a bias of 20 V at 100 degrees C.
Vortex domain wall depinning by polarized current in submicron half-ring wires
(2006-04-15)
Chen, YS
;
Cheng, KW
;
Yu, C
;
Lee, SF
;
Chen, DC
Domain wall pinning force in the junctions (corners), with different shapes of square, semicircle, or triangle, of half-ring in-series wires is considered to study the current injection induced wall movements. This geometry has less thermal activation at the region of domain wall nucleation in contrast to notch structures. The wires with square corners have the largest domain pinning force to resist polarized current-induced magnetization reversal, judging from the largest slope in the current-field dependence (Delta I/Delta H=0.274). (C) 2006 American Institute of Physics.