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Browsing by Author "Lin, Meng-Wei"

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    Contact resistance reduction on layered MoS2 by Ar plasma pre-treatment
    (2016)
    Ho, Yen-Teng
    ;
    Chu, Yung-Ching
    ;
    Jong, Chao An
    ;
    Chen, Hung-Yi
    ;
    Lin, Meng-Wei
    The effect of resistance (Rc) reduction of Ti/Au contact on MoS2 by ICP Ar plasma pretreatment is presented. The lowest Rc of 1.72 ohm-cm was achieved with the ICP treatment condition of 50W (ICP) /2W (chuck) for 10 sec. Compared with the contact without treatment (19.6 ohm-cm), the Rc improves over 10 times, demonstrating the advantage of Ar plasma pre-treatment on MoS2 contact.