Browsing by Author "Lin, Min-Chen"

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Benefit of NMOS by Compressive SiN as Stress Memorization Technique and Its Mechanism
(2010-04-01)
Liao, Chia-Chun
;
Chiang, Tsung-Yu
;
Lin, Min-Chen
;
Chao, Tien-Sheng
;
電子物理學系
In this letter, we certify that the compressive SiN capping layer has more potential than the tensile layer for fabrication using the stress memorization technique to enhance NMOS mobility. The mechanism that we have proposed implies that the conventional choice of the capping layer should bemodulated from the point of view of stress shift rather than using the highest tensile film.
Effects of Channel Width and Nitride Passivation Layer on Electrical Characteristics of Polysilicon Thin-Film Transistors
(2011-11-01)
Liao, Chia-Chun
;
Lin, Min-Chen
;
Chiang, Tsung-Yu
;
Chao, Tien-Sheng
;
電子物理學系
SiN passivation layers were found to yield better performance, suppress the kink effect, and improve the gate leakage current and gate-induced drain leakage (GIDL) of polysilicon thin-film transistors (TFTs). The SiN passivation layers deposited under different deposition conditions possess different characteristics due to their varying passivation effect. A physical mechanism is proposed to explain the double-hump phenomenon induced by incomplete trap passivation. Based on the analysis of width dependence, the better performance of the samples with SiN passivation layers was attributed not only to radical passivation of the defect states but also to radical passivation of preexisting defects in the gate oxide. Furthermore, using SiN passivation layers improves immunity to positive gate bias stress, negative gate bias stress, and hot-carrier stressing. Moreover, the manufacturing processes are simple (without the long processing time plasma treatment requires) and compatible with TFT processes.
Hydrogen Instability Induced by Postannealing on Poly-Si TFTs
(2012-06-01)
Liao, Chia-Chun
;
Lin, Min-Chen
;
Chao, Tien-Sheng
;
電子物理學系
;
Department of Electrophysics
This brief investigates hydrogen instability induced by postannealing. Results show that using a SiN capping layer can prevent the release of hydrogen from a polycrystalline-silicon channel. However, removing this SiN capping layer allows the hydrogen release during postannealing, and the resulting device performance becomes comparable to that of the control sample. Hydrogen release reduces the immunity of PBTI and NBTI. Two possible mechanisms can explain the increased preexisting defects associated with hydrogen release, which affects the NBTI and PBTI.
Impact of Strain Layer on Gate Leakage and Interface-State for nMOSFETs Fabricated by Stress-Memorization Technique
(2011)
Liao, Chia-Chun
;
Lin, Min-Chen
;
Chiang, Tsung-Yu
;
Chao, Tien-Sheng
;
電子物理學系
This paper investigates the impact of stress memorization on the interface-state for n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETS). We found that both the initial component of the deposited capping layer and the H released during annealing affected interface-state passivation. The annealed stress is responsible for degraded gate-leakage characteristics. Based on electrical performance and gate leakage, an initial compressive layer of SiN performs better than an initial tensile layer for the stress-memorization technique process. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3506399] All rights reserved.
Impacts of the Underlying Insulating Layers on the MILC Growth Length and Electrical Characteristics
(2012-02-01)
Liao, Chia-Chun
;
Lin, Min-Chen
;
Liu, Shao-Xuan
;
Chao, Tien-Sheng
;
電子物理學系
This letter investigates the impacts of proximity layers on metal-induced lateral crystallization (MILC). The underlying insulating layers not only affect the MILC growth length but also influence the electrical characteristics. Based on the comparison among the underlying insulating layers, SiN is unsuitable to be an underlying insulating layer because of concerns regarding the crystallization condition. This letter proposes three reasonable mechanisms, including the gettering of Ni, intrinsic stress, and the involvement of hydrogen to enhance the understanding of the impacts of proximity layers.