Browsing by Author "Lin, PJ"

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Copper chemical vapor deposition films deposited from Cu(1,1,1,5,5,5-hexafluoroacetylacetonate) vinyltrimethylsilane
(1999-08-01)
Lin, PJ
;
Chen, MC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Copper chemical vapor deposition (Cu CVD) from Cu(hfac)vinyltrimethylsilane was studied using a low pressure chemical vapor deposition (LPCVD) system of a cold-wall vertical reactor. It was found that the resistivity of the chemical vapor deposited Cu films,was dependent on the film's microstructure and impurity content, which in turn. were dependent on the deposition conditions. Using H-2 as the carrier gas, we were able to deposit Cu films of low impurity content at deposition rates as high as 150 Angstrom/min. The lowest resistivity Cu films can be deposited at a temperature of 180 degrees C and a pressure of 300 mTorr.
CVD Cu films deposited from Cu(hfac)TMVS
(1996)
Lin, PJ
;
Chen, MC
;
交大名義發表
;
電子工程學系及電子研究所
;
National Chiao Tung University
Copper chemical vapor deposition from Cu(hfac)TMVS was studied using an LPCVD system of a cold wall vertical reactor. It was found that the resistivity of the chemically vapor deposited Cu films was dependent on the film's microstructure and impurity content, which in turn were dependent on the deposition conditions. At a deposition temperature of 180 degrees C and with H-2 as the carrier gas, copper films with low impurity content can be deposited with low flow rate of H-2 at low deposition pressure, while copper films with a compact microstructure can be deposited at a condition of low pressure which ensures high supersaturation of active reactants' molecules(1). It turns out that copper films with the optimal resistivity can be deposited at a temperature of 180 degrees C and a pressure of 300 mTorr using H-2 as the carrier gas.
The CVD growth of Cu films using H-2 as carrier gas
(1999-05-01)
Lin, PJ
;
Chen, MC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Copper chemical vapor deposition from Cu(hexafluoroacetylacetonate)trimethyl-vinylsilane (Cu(hfac)TMVS) was studied using a low pressure chemical vapor deposition system of a cold wall vertical reactor. The Cu films deposited using H-2 as a carrier gas revealed no impurities in the films within the detection limits of Auger electron spectroscopy and x-ray photoelectron spectroscopy. Using hydrogen as a carrier gas, the hydrogen not only acts as a reducing agent, but also reacts with the residual fragment of precursor. As a result, using H-2 as a carrier gas for Cu(hfac)TMVS resulted in Cu films of lower resistivity, denser microstructure and faster deposition rate than using Ar or N-2 as the carrier gas. Moreover, we found that N-2 plasma treatment on the substrate surface prior to Cu deposition increased the deposition rate of Cu films.
Upper critical field of granular SnGe samples near the superconductor-to-insulator transition
(2005-06-01)
Lin, PJ
;
Hsu, SY
;
電子物理學系
;
Department of Electrophysics
We have measured the upper critical field, H-c2(T), in granular SnGe samples with normal state resistivities, rho(N), that range from 0.3 m Omega cm to 0.5 Omega cm. The samples demonstrate an evolution from superconducting to insulating in transport with increasing disorder. The temperature dependence of H-c2 shows a clear change in curvature between high rho(N) and intermediate rho(N) samples differing from the experimental results by Deutscher et al.. Our data is analyzed in terms of Ginzburg-Landau theory and grain structure induced disorder effect. The result is similar to the observation in high T-c superconductors that anisotropy induced fluctuation effect play an important role.