Browsing by Author "Lin, PY"

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The growth mechanism of micron-size V defects on the hydride vapor phase epitaxy grown undoped GaN films
(2003-05-26)
Lin, PY
;
Wu, YCS
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Micron-size V defects were found on the hydride vapor phase epitaxy grown GaN films. When the film thickness increased, the diameter of V defects increased, but the density of the defects decreased. The defect has six {1 1 0 1} facets, which encircle to form a concave hexagonal pyramid. Its shape is similar to that of epitaxial lateral overgrowth (ELO) GaN crystal grown on a dot-patterned GaN underlying layer. Through the analysis of the growth mechanism of ELO GaN, the growth mechanism of the V defects was investigated. (C) 2003 Elsevier Science B.V. All rights reserved.