Browsing by Author "Lin, Pei-Yin"

Now showing 1 - 4 of 4

Defects in semipolar (11(2)over-bar(2)over-bar) ZnO grown on (112) LaAlO3/(La, Sr) (Al, Ta)O-3 substrate by pulsed laser deposition
(2013-03-27)
Tian, Jr-Sheng
;
Wu, Yue-Han
;
Peng, Chun-Yen
;
Chiu, Kun-An
;
Shih, Yi-Sen
The microstructure of semipolar (11 (2) over bar(2) over bar) ZnO deposited on (112) LaAlO3/(La, Sr) (Al, Ta)O-3 was investigated by transmission electron microscopy. The ZnO shows an in-plane epitaxial relationship of [11 (2) over bar3](ZnO) parallel to [11 (1) over bar](LAO/LSAT) with oxygen-face sense polarity. The misfit strain along [11 (2) over bar3](ZnO) and [1 (1) over bar 00](ZnO) is relieved through the formation of misfit dislocations with the Burgers vectors b = 1/6[11 (2) over bar3](ZnO) and b = 1/3 < 1 (2) over bar 10 >(ZnO), respectively. The line defects in the semipolar ZnO are predominantly perfect dislocations, and the dislocation density decreases with increasing ZnO thickness as a result of dislocation reactions. Planar defects were observed to lie in the M-plane and extend along < 0001 >, whereas basal stacking faults were rarely found.
Effect of Growth Temperature on Formation of Amorphous Nitride Interlayer between AlN and Si(111)
(2013-08-01)
Lin, Pei-Yin
;
Chen, Jr-Yu
;
Chen, Yu-Chang
;
Chang, Li
;
材料科學與工程學系
The formation of an amorphous interlayer between AlN and Si(111), which may degrade the film quality, is studied by varying the substrate temperature from 860 to 1010 degrees C in metal-organic chemical vapor deposition with a preflow of trimethylaluminum. The microstructure and chemistry of the amorphous interlayer have been investigated using transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). Cross-sectional TEM examinations show that AlN is directly in contact with Si for growth at 860 degrees C. At higher growth temperatures, an amorphous interlayer can be formed even if an AlN layer has been previously deposited on Si, and its thickness increases with growth temperature. The XPS depth profile across the amorphous interlayer formed at 1010 degrees C shows that both Al and N exhibit similar distribution, which gradually decreases toward the Si substrate whereas the Si concentration has the opposite distribution. The composition of the amorphous interlayer is determined to consist of Al, Si, and N. (C) 2013 The Japan Society of Applied Physics
Growth orientations of semipolar ZnO on GaN(1 1 (2)over-bar 2)
(2014-12-15)
Shih, Yi-Sen
;
Lin, Pei-Yin
;
Chen, Jr-Yu
;
Chang, Li
;
材料科學與工程學系
On semipolar GaN(1 1 (2) over bar 2), epitaxial ZnO grown by chemical vapor deposition can form in two different semipolar orientations as evidenced by transmission electron microscopy and X-ray diffraction. One orientation relationship is shown to be ZnO(1 1 (2) over bar 2)//GaN(1 1 (2) over bar 2) and [(1) over bar 1 0 0](ZnO)//[(1) over bar 1 0 0](GaN) which is expected for ZnO growth on GaN(1 1 (2) over bar 2), while the other is a newly found relationship of ZnO((1) over bar 0 1 (1) over bar)//GaN(0 0 0 2) and [5 (7) over bar 2 (3) over bar](ZnO)//[(1) over bar 1 0 0](GaN). (C) 2014 Elsevier B.V. All rights reserved.
Structural properties of Al-rich AlInN grown on c-plane GaN substrate by metal-organic chemical vapor deposition
(2014-11-23)
Lin, Pei-Yin
;
Chen, Jr-Yu
;
Shih, Yi-Sen
;
Chang, Li
;
材料科學與工程學系
The attractive prospect for AlInN/GaN-based devices for high electron mobility transistors with advanced structure relies on high-quality AlInN epilayer. In this work, we demonstrate the growth of high-quality Al-rich AlInN films deposited on c-plane GaN substrate by metal-organic chemical vapor deposition. X-ray diffraction, scanning electron microscopy, and scanning transmission electron microscopy show that the films lattice-matched with GaN can have a very smooth surface with good crystallinity and uniform distribution of Al and In in AlInN.