Browsing by Author "Lin, Po-Jui Jerry"

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Localized Tunneling Phenomena of Nanometer Scaled High-K Gate-Stack
(2017-08-01)
Lin, Po-Jui Jerry
;
Lee, Che-An Andy
;
Yao, Chih-Wei Kira
;
Lin, Hsin-Jyun Vincent
;
Watanabe, Hiroshi
The 3-D simulator, which is capable of sensing potential change due to single electron's movement via a local trap inside the high-K gate-stacking block, is developed. Then, we carefully investigate how the electron's movement effects on the reliabilities of high-K gate-stack far beyond 10-nm generations. The simulation result shows that the potential change caused by a single electron's charge is about a few hundered millivolts inside the high-K gate-stacking block. By this result, random telegraph noise (RTN) and trap-assisted tunneling (TAT) are carefully investigated with respect to various applied biases, interface suboxide layer thicknesses, and the dielectric constant of high-K dielectrics (K). We also take into account the Coulomb blockade of a local trap, and then obtain several phase diagrams for distinguishing RTN and TAT under various conditions. It is then found that K = 30 can most effectively suppress the gate leakage current.
Nano-meter Scaled Gate Area High-K Dielectrics with Trap-Assisted Tunneling and Random Telegraph Noise
(2014-01-01)
Lin, Po-Jui Jerry
;
Lee, Zhe-An Andy
;
Yao, Chih-Wei Kira
;
Lin, Hsin-Jyun Vincent
;
Watanabe, Hiroshi
If the trap density is 10(12)cm(-2), then there are only one trap in 10nm x 10nm on average. Accordingly, three-dimensional simulation that is sensitive to the movement of sole electron is indispensable for carefully investigating the reliability issues related to local traps in future nano-electron devices. As a demonstration, we investigate Random Telegraph Noise (RTN) and Trap-Assisted Tunneling (TAT) at the same moment in 5nmx5nm gate area high-K dielectrics (EOT=0.8nm to 0.47nm). The simulation is carried out with respect to various gate biases, physical thickness of high-K, interlayer suboxide thickness, and dielectric constant of high-K. It is suggested that thinner suboxide and higher permittivity can suppress the increase of the leakage current which is caused by TAT.