Browsing by Author "Lin, Po-Shao"

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A Comprehensive Evaluation of the Performance of Fin-type Epitaxial Tunnel Layer (ETL) Tunnel FET
(2017-01-01)
Lin, Po-Shao
;
Tsui, Bing-Yue
;
電機學院
;
電子工程學系及電子研究所
;
College of Electrical and Computer Engineering
Epitaxial tunnel layer tunnel FET (ETL TFET) is one of the promising device for ultra-low power applications. In this work, device performance between planar ETL TFET and Fin ETL TFET are evaluated. For n-type TFET, the electric field enhancement in Si region due to the fin structure results in Si-to-Ge and Si-to-Si tunneling at low voltage so that the subthreshold swing is degraded. For the p-type TFET, different TFET structures show similar subthreshold swing because only Ge-to-Ge tunneling occurs. In comparison with the planar TFET, Fin TFET exhibits 35% improvement and 40% degradation on conduction current for n-type and p-type TFET, respectively.