Browsing by Author "Lin, Po-Shun"

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A novel nanowire channel poly-Si TFT functioning as transistor and nonvolatile SONOS memory
(2007-09-01)
Chen, Shih-Ching
;
Chang, Ting-Chang
;
Liu, Po-Tsun
;
Wu, Yung-Chun
;
Lin, Po-Shun
In this letter, a polycrystalline silicon thin-film transistor consisting of silicon-oxide-nitride-oxide-silicon (SONOS) stack gate dielectric and nanowire (NW) channels was investigated for the applications of transistor and nonvolatile memory. The proposed device, which is named as NW SONOS-TFT, has superior electrical characteristics of transistor, including a higher drain current, a smaller threshold voltage (V-th), and a steeper subthreshold slope. Moreover, the NW SONOS-TFT also can exhibit high program/erase efficiency under adequate bias operation. The duality of both transistor and memory device for the NW SONOS-TFT can be attributed to the trigate structure and channel corner effect.
Characteristics of poly-Si TFT combined with nonvolatile SONOS memory and nanowire channels structure
(2007-12-15)
Chen, Shih-Ching
;
Chang, Ting-Chang
;
Liu, Po-Tsun
;
Wu, Yung-Chun
;
Lin, Po-Shun
In this work, we study a polycrystalline silicon thin-film transistor (poly-Si TFT) combined with a silicon-oxide-nitride-oxide-silicon (SONOS) stack gate dielectric and nanowire channels structure for the applications of transistor and nonvolatile memory. The proposed device named with NW SONOS-TFT has superior electrical characteristics of transistor and also can exhibit high program/erase (P/E) efficiency under adequate bias operation. The V-th decreases from 2.45 V to 1.76 V and subthreshold swing reduces from 0.57 V/decade to 0.42 V/decade. The programming V-th shift is improved from 2.2 V to 3.3 V at 14 V for 1 s and the erasing V-th shift is improved from -0.3 V to -1.3 V at -14 V for 1 s. The dramatic improvement can be attributed to the tri-gate structure and corner effect. In addition, the memory device has a promising data retention behavior at 85 degrees C and a 0.8 V memory window after 5 x 10(3) P/E cycles operations. Hence, the NW SONOS-TFT is suitable for application in the future system-on-panel display. (C) 2007 Elsevier B.V. All rights reserved.