Browsing by Author "Lin, Ru-Zheng"

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Junctionless gate-all-around nanowire field-effect transistors with an extended gate in biomolecule detection
(2019-02-01)
Chen, Chih-Wei
;
Lin, Ru-Zheng
;
Chiang, Li-Chuan
;
Pan, Fu-Ming
;
Sheu, Jeng-Tzong
In this study, we investigated the potential drift and sensitivity in an extended-gate (EG) field-effect-transistor (FET)-based potentiometric sensor with junctionless (JL) and inversion-mode (IM) gate-all-around (GAA) nanowire (NW) FETs. An EG electrode (EGE) coated with Al2O3 via plasmaenhanced atomic-layer deposition exhibited high stability. Both JL and IM GAA NWFETs were prepared in the same batch and exhibited high electrical performance, including a steep subthreshold swing of approximately 63 mV dec(-1) and a high ON/OFF current ratio of approximately 3 x 10(7) at V-DS = 0.1 V. However, JL GAA NWFETs exhibited higher drift stability than did IM GAA NWFETs under various working regions over a long period of operation. Furthermore, JL GAA NWFETs with EGEs (JL GAA NWFETs w-EGEs) exhibited the highest sensitivity when operating under the subthreshold region in pH sensing (Delta I/I-0 = similar to 4410%). The readout sensitivity reached S-out = 82%. A JL GAA NWFET w-EGE was also demonstrated as a potentiometric biosensor for streptavidin real-time detection at concentrations of 42 fM to 4.2 nM. (C) 2019 The Japan Society of Applied Physics
Selective Deposition of Multiple Sensing Materials on Si Nanobelt Devices through Plasma-Enhanced Chemical Vapor Deposition and Device-Localized Joule Heating
(2017-11-22)
Lin, Ru-Zheng
;
Cheng, Kuang-Yang
;
Pan, Fu-Ming
;
Sheu, Jeng-Tzong
;
材料科學與工程學系奈米科技碩博班
This paper describes a novel method, using device-localized Joule heating OH) in a plasma enhanced atomic layer deposition (PEALD) system, for the selective deposition of platinum (Pt) and zinc oxide (ZnO) in the n(-) regions of n(+)/n(-)/n(+) polysilicon nanobelts (SNBs). COMSOL simulations were adopted to estimate device temperature distribution. However, during ALD process, the resistance of SNB device decreased gradually and reached to minima after 20 min JH. As a result, thermal decomposition of precursors occurred during PEALD process. Selective deposition in the n(-) region was dominated by CVD instead of ALD. Selective deposition of Pt and ZnO films has been achieved and characterized using atomic force microscopy, scanning electron microscopy, and transmission electron microscopy.