Browsing by Author "Lin, S. J."

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Box-Cox Transformation Approach for Evaluating Non-Normal Processes Capability Based on the C-pk Index
(2014-07-01)
Wu, C. H.
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Lin, S. J.
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Yang, D. L.
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Pearn, W. L.
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工業工程與管理學系
In manufacturing quality control and operations management, the process yield plays an important role. The capability index C-pk provides a lower bound on the process yield under the assumption that the process characteristic is normally distributed. When the normality assumption is violated, we can transform the non-normal data into normal data by using an appropriate transformation approach. In this paper, we consider the Box-Cox transformation and compare two estimation methods including the maximum likelihood estimator (MLE) and the method of percentiles (MOP). The performance comparison is based on the coverage rate, the precision, and the accuracy of the process non-conformity percentage evaluation. For various sample sizes and various distributions, several figures are presented to compare these two methods.
InN nanotips as excellent field emitters
(2008-03-24)
Wang, K. R.
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Lin, S. J.
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Tu, L. W.
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Chen, M.
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Chen, Q. Y.
Unidirectional single crystalline InN nanoemitters were fabricated on the silicon (111) substrate via ion etching. These InN nanoemitters showed excellent field emission properties with the threshold field as low as 0.9 V/mu m based on the criterion of 1 mu A/cm(2) field emission current density. This superior property is ascribed to the double enhancement of (1) the geometrical factor of the InN nanostructures and (2) the inherently high carrier concentration of the degenerate InN semiconductor with surface electron accumulation layer induced downward band bending effect that significantly reduced the effective electron tunneling barrier even under very low external field. (c) 2008 American Institute of Physics.