Browsing by Author "Lin, S. L."

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BCB-to-oxide bonding technology for 3D integration
(2012-02-01)
Lin, S. L.
;
Huang, W. C.
;
Ko, C. T.
;
Chen, K. N.
;
電子工程學系及電子研究所
Process optimization of BCB polymer to silicon oxide bonding was investigated. The suitable bonding temperature is about 300 degrees C, while bond failure of BCB-to-oxide bonding is observed starting from 400 degrees C. Bonding interface morphologies and bond strengths of BCB-to-oxide bonding were investigated as well. PECVD oxide to BCB bonding has better bonding quality than that of thermal oxide to BCB bonding. Si-O-Si bonds may be the reason of a strong BCB to oxide bonding. Water molecules link BCB and oxide surfaces during the initial contact, while Si-O-Si bonds are formed during bonding. This proposed mechanism of BCB-to-oxide bonding provides a guideline for polymer to oxide hybrid bonding technology in 3D integration. (C) 2011 Elsevier Ltd. All rights reserved.