Browsing by Author "Lin, S. T."

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Electron-phonon dephasing time due to the quasistatic scattering potential in metallic glass CuZrAl
(2006-11-01)
Li, L.
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Lin, S. T.
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Dong, C.
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Lin, J. J.
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電子物理學系
We have measured the electron-phonon scattering time in the metallic glass CuZrAl between 0.37 and 16 K, using the weak-localization magnetoresistance. The electron dephasing rate reveals a T-2 temperature dependence for almost two decades of temperature and is in good quantitative agreement with the theory considering the interference of electron-phonon and elastic electron scattering mechanisms in the presence of quasielastic scattering potential. In addition, this result demonstrates that the Pippard ineffectiveness condition for electron-phonon scattering is not applicable to amorphous alloys that comprise atoms with considerably different atomic masses.
Gate Current Variation: A New Theory and Practice on Investigating the Off-State Leakage of Trigate MOSFETs and the Power Dissipation of SRAM
(2013-01-01)
Hsieh, E. R.
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Lin, S. T.
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Chung, Steve S.
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Huang, R. M.
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Tsai, C. T.
A new gate current variation (sIg) has been proposed for the first time and demonstrated on the trigate devices. It was found that gate current variation can serve as an indicator of the gate sidewall surface roughness. A new theory has then been developed and verified experimentally on trigate devices with various fin heights. Results show that surface roughness increases with the increasing fin height. In addition, hot carrier and NBT stresses have also been performed for trigate CMOS devices. It was found that NBTI exhibits the worst Ig variation. Finally, this theory has been tested on the SRAM to examine the standby power dissipation. Results show that the power dissipation is dominated by the pFET NBTI effect.