Browsing by Author "Lin, S. W."

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Cell Endurance Prediction from a Large-area SONOS Capacitor
(2009)
Lee, C. H.
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Tu, W. H.
;
Gu, S. H.
;
Wu, C. W.
;
Lin, S. W.
Endurance considerations induced by the degadation of top and bottom oxides are proposed for a SONOS memory. First, a correlation is found between the widespread C-V curves induced by interface generation and cycling numbers (cyc. #). Unlike V-FB (accumulation region), V-T (inversion region) shows a much severe shift. Inter-face state (N-it) is identified as a key factor even when a 2nm bottom oxide is used. Moreover, charge to breakdown (Q(BD)) for an ONO capacitor under positive and negative constant current stress (CCS) is investigated. Our study reveals that QBD of such stacks strongly depends on the top oxide thickness. A field enhancement induced by charges in a trapping nitride layer is the root cause. Based on Weibull statistics, the risk of dielectric breakdown for both blocking layers is then evaluated.
Modeling of nitrogen profile effects on direct tunneling probability in ultrathin nitrided oxides
(2008-01-14)
Liu, Po-Tsun
;
Huang, Chen-Shuo
;
Lee, D. Y.
;
Lim, P. S.
;
Lin, S. W.
The dependence of the gate tunneling current (J(g)) on nitrogen profile (N profile) within an ultrathin silicon oxynitride film is reported. It was found that gate tunneling current is dependent on N profile, even with equal oxide thickness and nitrogen dosage. Gate tunneling current increased with steeper N profile, and it had higher sensitivity for p-type metal-oxide-semiconductor field-effect transistor (MOSFET) than n-type MOSFET. A direct tunneling model based on Wentzel-Kramers-Brillouin approximation has been proposed. The model described the influence of N profiles on gate tunneling current through local change of dielectric constant, band bending, and effective mass. Also, it reasonably explained the different J(g) sensitivity in n-/p-MOSFETs, a phenomenon that has not been addressed in earlier publications. (c) 2008 American Institute of Physics.
Superconductivity in an Aluminum Film Grown by Molecular Beam Epitaxy
(2012-08-01)
Liang, C. -T.
;
Yeh, M. -R.
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Lin, S. D.
;
Lin, S. W.
;
Wu, J. Y.
We report on superconductivity in an aluminum film grown on a GaAs substrate by molecular beam epitaxy (MBE). We show that the quality of the MBE-grown sample is better than that of its counterpart prepared by electron gun evaporation. This is evidenced by the observed much lower resistivity, higher critical current, longer coherence length, and downward critical field-temperature characteristic H-c(T). Our results suggest that a MBE-grown Al thin film can be used to study superconductivity in a relatively clean metal.