Browsing by Author "Lin, Shang-Yuan"

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High Efficiency Power Management System for Solar Energy Harvesting Applications
(2010)
Chang, Ming-Hung
;
Wu, Jung-Yi
;
Hsieh, Wei-Chih
;
Lin, Shang-Yuan
;
Liang, You-Wei
A high efficiency power management system for solar energy harvesting applications is proposed. The power management system receives power from photovoltaic (PV) cell and generate different voltage levels, they are 1V similar to 0.3V for analog circuitry and low power digital circuitry, -1.2V for super-cutoff technique in memory circuitry, and 10V for FLASH memory or I/O components. The great voltage varieties are suitable for green integrated regulator SoC electronics. The power management system also contains a rechargeable battery which is charged by multi-phase maximum power tracking (MPT) circuitry with the PV cell module. With the MPT circuitry, the power of PV cell can be regulated in the maximum power region. The average power efficiency of the MPT circuitry is up to 80%similar to 73%. All resultsare simulated in UMC 90nm bulk CMOS technology model.
Near-/Sub-V-th Process, Voltage, and Temperature (PVT) Sensors with Dynamic Voltage Selection
(2013)
Chang, Ming-Hung
;
Lin, Shang-Yuan
;
Wu, Pei-Chen
;
Zakoretska, Olesya
;
Chuang, Ching-Te
A process, voltage and temperature (PVT) sensors with dynamic voltage selection are proposed for environmental management in the ultra-low voltage dynamic voltage and frequency scaling (DVFS) system. The process and voltage (PV) sensors initially monitor the process variation. With known process information, PV sensors can real-time provide voltage variation status. The temperature sensor has six temperature sensitive ring oscillators (TSROs) generating frequency proportional to temperature. It dynamically selects the proper TSRO to convert the frequency into digital readings according to voltage status provided by PV sensors. With known process and voltage information from PV sensors, a pure temperature measurement result can be obtained. The proposed PVT sensors are designed in TSMC 65nm CMOS technology. This work can be dynamically operated over an ultra-low voltage range from 0.25V to 0.5V. Only 2.3 mu W is consumed at 0.25V. They can achieve 0.15 degrees C resolution and 50k samples/sec conversion rate.