Browsing by Author "Lin, Shen-Chieh"

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Effect of Etching Depth on Threshold Characteristics of GaSb-Based Middle Infrared Photonic-Crystal Surface-Emitting Lasers
(2019-03-14)
Li, Zong-Lin
;
Lin, Shen-Chieh
;
Lin, Gray
;
Cheng, Hui-Wen
;
Sun, Kien-Wen
We study the effect of etching depth on the threshold characteristics of GaSb-based middle infrared (Mid-IR) photonic-crystal surface-emitting lasers (PCSELs) with different lattice periods. The below-threshold emission spectra are measured to identify the bandgap as well as band-edge modes. Moreover, the bandgap separation widens with increasing etching depth as a result of enhanced diffraction feedback coupling. However, the coupling is nearly independent of lattice period. The relationship between threshold gain and Bragg detuning is also experimentally determined for PCSELs and is similar to that calculated theoretically for one-dimensional distributed feedback lasers.
PCSEL Performance of Type-I InGaAsSb Double-QWs Laser Structure Prepared by MBE
(2019-01-02)
Cheng, Hui-Wen
;
Lin, Shen-Chieh
;
Li, Zong-Lin
;
Sun, Kien-Wen
;
Lee, Chien-Ping
This paper discusses the issue of controlling the epitaxial growth of mixed group V alloys to form a type-I InGaAsSb/AlGaAsSb double quantum wells (QWs) structure. We also discuss the run-to-run reproducibility of lattice-matched AlGaAsSb alloys and strained In0.35Ga0.65As0.095Sb0.905 in terms of growth parameters (V/III ratio, Sb-2/As-2 ratio). Molecular beam epitaxy (MBE) was used to grow two type-I InGaAsSb double-QWs laser structures differing only in the composition of the bottom cladding layer: Al0.85Ga0.15As0.072Sb0.928 (sample A) and Al0.5Ga0.5As0.043Sb0.957 (sample B). Both samples were respectively used in the fabrication of photonic crystal surface-emitting lasers (PCSELs). Sample A presented surface lasing action from circular as well as triangular photonic crystals. Sample B did not present surface lasing due to the deterioration of the active region during the growth of the upper cladding. Our findings underline the importance of temperature in the epitaxial formation of AlxGa1-xAsySb1-y in terms of lasing performance.
Relationship between Threshold Gain and Bragg Detuning in Photonic-Crystal Surface-Emitting Lasers
(2019-01-01)
Li, Zong-Lin
;
Lin, Shen-Chieh
;
Chen, Yu-Chen
;
Lin, Gray
;
電子工程學系及電子研究所
The device characteristics of GaSb-based mid-infrared (MIR) photonic-crystal (PC) surface-emitting lasers (SELs) were investigated with respect to depths of etched PC holes. Measurement of below-threshold emission spectra identifies the bandgap as well as band-edge modes. The bandgap separation, which is a function of feedback coupling, increases with increasing depth. From within, the Bragg frequencies and their detuning from lasing frequencies can be determined. Moreover, with increasing depth, the threshold pumping density decreases exponentially to a saturation level, which is assigned to minimum device modal gain of certain value. The relative threshold gain is then plotted as a function of normalized frequency detuning. The gain-detuning relationship of PCSELs is similar to that of one-dimensional (1D) distributed feedback (DFB) lasers.