Browsing by Author "Lin, Sheng-Yu"

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Germanium nanowire/conjugated semiconductor nanocomposite field effect transistors
(2018-06-01)
Lin, Sheng-Yu
;
Chan, Chih-Yu
;
Tsai, Chih-Wen
;
Hsieh, Gen-Wen
;
光電系統研究所
We demonstrate p-channel solution-processed nanocomposite field effect transistors based on a novel bilayer semiconductor of conjugated 6,13-bis(triisopropylsilylethinyl) pentacene (TIPS-PEN) or poly (3-octylthiophene-2,5-diyl) (P3OT) on an ordered network of germanium (Ge) nanowires. With an appropriate loading of Ge nanowires into the active channel, nanocomposite transistors show an enhancement of more than a factor of 10 over pristine devices. A hole carrier mobility as high as 0.248 cm(2) V(-1)s(-1) can be achieved based on the heterogeneous Ge/TIPS-PEN network. Moreover, the nanowire orientation relative to the source and drain contacts plays a crucial role in influencing the effective charge transport pathway and mobility anisotropy. It is expected that the nanocomposite FETs with oriented nanowire networks may open up a promising alternative route for the creation of next generation optoelectronic devices.
Graphene-induced enhancement of charge carrier mobility and air stability in organic polythiophene field effect transistors
(2018-03-01)
Hsieh, Gen-Wen
;
Lin, Zong-Rong
;
Hung, Chun-Yi
;
Lin, Sheng-Yu
;
Yang, Chii-Rong
We investigate multifunctional graphene nanostructures as charge carrier mobility enablers and moisture and air barrier films for organic-based polythiophene field effect transistors. Primary results show that a tiny amount of graphene flakes blended in the polythiophene active channel could reach a ten-fold increase in effective transistor mobility. Moreover, densely packed honeycomb graphene for efficient moisture and air shielding is firstly applied on organic active channels without any supporting polymer, resulting in mild mobility degradation in ambient environment with respect to unprotected polythiophene devices. Thus, hybrid graphene-polythiophene blend transistors laminated with graphene passivation layers exhibit significantly superior and prolonged performances over 1400 h, whereas the hybrid devices without graphene passivation become unswitchable in 600 h. Moreover, their low processing temperature (< 150 degrees C), solution processability, and flexibility of both graphene and polythiophene makes them a highly promising means for next-generation organic field effect transistors.