Browsing by Author "Lin, Shih-Kai"

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A Smart Headband for Epileptic Seizure Detection
(2017-01-01)
Lin, Shih-Kai
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Lin, Yu-Shan
;
Lin, Chin-Yew
;
Chiueh, Herming
;
電機工程學系
Epilepsy is a common neural disorder disease; about 1.7% of the global population has epilepsy. Most patients take antiepileptic drugs to reduce their seizures. Among them, nearly one-third of the patients are drug-resistant epilepsy. The alternative treatment is the resection surgery of removing the epileptogenic zone. However, all above patients will still have some seizures, which will influence the patients' quality-of-life, and further introduce danger and inconvenience to patients and people around. This paper presents the design and develop of the smart headband for epileptic seizure detection. The headband consists of a textile headband with flexible print circuit (FPC) inside, and fabric electrodes on it. The whole system includes the following circuits: an analog front-end circuitry for electroencephalography (EEG) record, an epileptic seizure detection System-on-Chip (SoC), and a Bluetooth Low Energy (BLE) Chip. The result of designed circuits yields a compact and low-power design of smart headband for epileptic seizure detection which is suitable for wearable usage.
An Ultra-Low Power Smart Headband for Real-Time Epileptic Seizure Detection
(2018-01-01)
Lin, Shih-Kai
;
Istiqomah
;
Wang, Li-Chun
;
Lin, Chin-Yew
;
Chiueh, Herming
In this paper, the design of a smart headband for epileptic seizure detection is presented. The proposed headband consists of four key components: 1) an analog front-end circuitry; 2) an epileptic seizure detection tag (ESDT); 3) a Bluetooth low-power chip; and 4) customized electrodes. All the above components are integrated into a fabric headband with only 50.3 g. The smart headband system dissipates 55.89 mW. The epileptic seizure detection algorithm inside ESDT is validated by using Boston Children's Hospital's CHB-MIT scalp EEG clinical database with the detection rate of 92.68% and the false alarm of 0.527/h. We develop a service APP connected to the cloud so that the patients' health condition can be recorded and then referenced by doctors for further diagnosis or research.
Analyzing Electric Field Effect by Applying an Ultra-Short Time Pulse Condition in Hafnium Oxide-Based RRAM
(2018-08-01)
Wu, Cheng-Hsien
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Lin, Shih-Kai
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Pan, Chih-Hung
;
Chen, Po-Hsun
;
Lin, Wen-Yan
In this letter, we determine the importance of the electrical field distribution and strength during the switching process by demonstrating different trends in the degree of reset and the reset pulse time. In general, a longer reset pulse time results in a higher reset energy; a higher reset energy leads to a higher degree of reset, which we obtainedby applying different width square waves. But quite notably, the opposite result was obtained using triangle waves, where a higher degree of reset occurred with a shorter rising time and lower reset energy. We believe that this is due to the electric field effect: if the voltage rises faster than the filament oxidation, the device can produce a larger effective electric field and a higher resistance in the reset process. To further investigate the mechanism, the procedure of the reset process was analyzed in detail, and COMSOL simulation is also carried out for confirmation.
Effect of charge quantity on conduction mechanism of high-and low-resistance states during forming process in a one-transistor-one-resistor resistance random access memory
(2017-05-01)
Wu, Cheng-Hsien
;
Chang, Ting-Chang
;
Tsai, Tsung-Ming
;
Chang, Kuan-Chang
;
Chu, Tian-Jian
The forming process is a necessary and irreversible process to activate the resistance switching behavior in a resistance random access memory (RRAM) device. However, during the forming process, an overshoot current leads to device damage and causes inferior resistance switching characteristics; consequently, the process is considered to be a key factor in device degradation. In this paper, we find that a discontinuous conduction path can be formed by a pulse forming process such that the operation current can be reduced. We further investigate how the charge quantity during the forming process affects the carrier conduction mechanism of HRS, with all experiments and results demonstrated on onetransistor- one-resistor (1T1R) devices. (C) 2017 The Japan Society of Applied Physics
Impact of electrode thermal conductivity on high resistance state level in HfO2-based RRAM
(2020-09-23)
Lin, Shih-Kai
;
Wu, Cheng-Hsien
;
Chen, Min-Chen
;
Chang, Ting-Chang
;
Lien, Chen-Hsin
This study examines the influence of different electrode thermal conductivity on switching behavior during the reset process. Electrical analysis methods and an analysis of current conduction mechanism indicate that better thermal conductivity in the electrode will require larger input power in order to induce more active oxygen ions to take part in the reset process. More active oxygen ions result in a more oxidized switching layer, and cause the effective switching gap (d(sw)) to become larger in the reset process. The effect of the electrode thermal conductivity and input power are explained by our model and clarified by electrical analysis methods.
Incorporation of Resistive Random Access Memory into Low-Temperature Polysilicon Transistor with Fin-Like Structure as 1T1R Device
(1970-01-01)
Huang, Wei-Chen
;
Zheng, Hao-Xuan
;
Chen, Po-Hsun
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Chang, Ting-Chang
;
Tan, Yung-Fang
In this study, a one transistor one resistor (1T1R) structure combining a fin-like low-temperature polycrystalline-silicon (LTPS) transistor and a resistive random access memory (RRAM) is successfully fabricated. For the fin-like LTPS transistor, both n-type and p-types show excellent electrical output characteristics. Fin-like structure produces more stable output characteristics. Also, the forming and current-voltage (I-V) characteristics are measured in this study, and the RRAM exhibits a forming voltage of about -1.9 V. As for the I-V switching property, the devices are stable and show excellent performance, with the set and reset voltages showing only minimal change over 100 cycles. Moreover, combining the fin-like LTPS transistor and RRAM into a 1T1R structure results in favorable operation over 100 cycles, with excellent retention and endurance. According to these results, RRAM can be successfully combined with a fin-like LTPS transistor for application in current integrated circuit processes without difficulty.
The Effect of Humidity on Reducing Forming Voltage in Conductive-Bridge Random Access Memory With an Alloy Electrode
(2019-10-01)
Lin, Shih-Kai
;
Chen, Min-Chen
;
Chang, Ting-Chang
;
Lien, Chen-Hsin
;
Chang, Jing-Shuen
This letter investigates Au30Ag70 (alloy electrode)/SiO2/TiN conductive-bridge random access memory (CBRAM) to verify the influence of ambient conditions on forming voltage (V-F) and the location of galvanic reaction. Previous literature demonstrates that the galvanic reaction in CBRAM with an alloy electrode results in a lower V-F. In this work, a higher environmental H2O concentration results in a decrease in V-F. From this change in VF, we infer that environmental H2O concentration influences the amount of galvanic reaction. Moreover, we verify the location of the galvanic reaction by varying electrode thickness. Finally, we propose a physical model to explain our observations.