Browsing by Author "Lin, T. L."
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Item type:Item, Controllable Disorder in a Hybrid Nanoelectronic System: Realization of a Superconducting Diode(2013-07-24) ;Lo, Shun-Tsung ;Chen, Kuang Yao ;Lin, Sheng-Di ;Wu, J-Y.Lin, T. L.We have studied a hybrid nanoelectronic system which consists of an AlGaAs/GaAs two-dimensional electron gas (2DEG) in close proximity (similar to 70 nm) to an Al superconducting nanofilm. By tuning the current through the Al film, we can change the conductance of the 2DEG and furthermore vary the effective disorder in the Al superconducting film in a controllable way. When a high current is injected into the film, screening which couples the Al film and the 2DEG results in a collapse of anti-symmetric behavior in the current-voltage characteristics, V(I) similar to - V(-I), which holds true in a conventional superconductor. Our results may open a new avenue of experimentally realizing a superconducting diode.Item type:Item, Probing the onset of strong localization and electron-electron interactions with the presence of a direct insulator-quantum Hall transition(2010-10-01) ;Lo, Shun-Tsung ;Chen, Kuang Yao ;Lin, T. L. ;Lin, Li-HungLuo, Dong-ShengWe have performed low-temperature transport measurements on a disordered two-dimensional electron system (2DES). Features of the strong localization leading to the quantum Hall effect are observed after the 2DES undergoes a direct insulator-quantum Hall transition on increasing the perpendicular magnetic field. However, such a transition does not correspond to the onset of strong localization. The temperature dependences of the Hall resistivity and Hall conductivity reveal the importance of the electron-electron interaction effects for the observed transition in our study. (C) 2010 Elsevier Ltd. All rights reserved.Item type:Item, Probing the onset of strong localization and electron-electron interactions with the presence of a direct insulator-quantum Hall transition(2010-10-01) ;Lo, Shun-Tsung ;Chen, Kuang Yao ;Lin, T. L. ;Lin, Li-HungLuo, Dong-ShengWe have performed low-temperature transport measurements on a disordered two-dimensional electron system (2DES). Features of the strong localization leading to the quantum Hall effect are observed after the 2DES undergoes a direct insulator-quantum Hall transition on increasing the perpendicular magnetic field. However, such a transition does not correspond to the onset of strong localization. The temperature dependences of the Hall resistivity and Hall conductivity reveal the importance of the electron-electron interaction effects for the observed transition in our study. (C) 2010 Elsevier Ltd. All rights reserved.Item type:Item, Superconductivity in an Aluminum Film Grown by Molecular Beam Epitaxy(2012-08-01) ;Liang, C. -T. ;Yeh, M. -R. ;Lin, S. D. ;Lin, S. W.Wu, J. Y.We report on superconductivity in an aluminum film grown on a GaAs substrate by molecular beam epitaxy (MBE). We show that the quality of the MBE-grown sample is better than that of its counterpart prepared by electron gun evaporation. This is evidenced by the observed much lower resistivity, higher critical current, longer coherence length, and downward critical field-temperature characteristic H-c(T). Our results suggest that a MBE-grown Al thin film can be used to study superconductivity in a relatively clean metal.