Browsing by Author "Lin, Ting-Chun"

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Characteristics of a low repetition rate passively mode-locked Yb-doped fiber laser in an all-normal dispersion cavity
(2013-02-01)
Lin, Ja-Hon
;
Jhu, Jia-Liang
;
Jyu, Siao-Shan
;
Lin, Ting-Chun
;
Lai, Yinchieh
The lasing characteristics of a 365 kHz low repetition rate Yb-doped fiber laser operated in an all-normal dispersion cavity and mode-locked by the nonlinear polarization rotation mechanism are investigated in detail. As the pump power increases, the laser exhibits two transition routes when evolved from the continuous-wave (CW) state to the mode-locked (ML) state. In one evolution route the Q-switched mode-locked (QML) state is sandwiched between the CW and ML states, whereas in the other more interesting evolution route the hysteresis transition between the CW and ML states is found for the first time. Under the mode-locking operation, the laser generates sub-nanosecond pulses with linear dependence of pulsewidth on bandwidth under different pump powers, indicating the presence of giant linear chirps on the laser output pulses.
Effect of Thermal Treatments on HfO2/In0.7Ga0.3As Metal-Oxide-Semiconductor Capacitor Characteristics
(2010)
Chang, Chia-Hua
;
Shie, Tin-En
;
Lin, Yueh-Chin
;
Kakushima, K.
;
Iwai, H.
Post deposition annealing is a critical process for the quality improvement of gate oxides on III-V MOS capacitors. Though high temperature annealing would effectively repair defects, it could also induce undesired electrical characteristics due to the crystallization of the gate oxide. In this work, we investigate the novel two steps annealing technique to improve the HfO2/In0.7Ga0.3As MOSCAP properties. The two steps process takes advantage of 1st high temperature annealing (550 degrees C) to improve the interface quality and 2nd low temperature annealing (450 degrees C) for curing bulk oxide without oxide crystallization. The two steps annealing technique greatly improves the HfO2/In0.7Ga0.3As properties as compared to single step process and is expected to be helpful for future III-V MOSFET development.
Effects of post-annealing on the structural and nanomechanical properties of Ga-doped ZnO thin films deposited on glass substrate by rf-magnetron sputtering
(2011-11-15)
Wang, Szu-Ko
;
Lin, Ting-Chun
;
Jian, Sheng-Rui
;
Juang, Jenh-Yih
;
Jang, Jason S. -C.
In this study, the effects of post-annealing on the structure, surface morphology and nanomechanical properties of ZnO thin films doped with a nominal concentration of 3 at.% Ga (ZnO:Ga) are investigated using X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM) and nanoindentation techniques. The ZnO:Ga thin films were deposited on the glass substrates at room temperature by radio frequency magnetron sputtering. Results revealed that the as-deposited ZnO:Ga thin films were polycrystalline albeit the low deposition temperature. Post-annealing carried out at 300, 400 and 500 degrees C, respectively, has resulted in progressive increase in both the average grain size and the surface roughness of the ZnO:Ga thin film, in addition to the improved thin films crystallinity. Moreover, the hardness and Young's modulus of ZnO:Ga thin films are measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM) option. The hardness and Young's modulus of ZnO:Ga thin films increased as the annealing temperature increased from 300 to 500 degrees C, with the best results being obtained at 500 degrees C. (C) 2011 Elsevier B.V. All rights reserved.
Nanomechanical properties and fracture toughness of Bi3Se2Te thin films grown using pulsed laser deposition
(2016-10-01)
Phuoc Huu Le
;
Luo, Chih-Wei
;
Jian, Sheng-Rui
;
Lin, Ting-Chun
;
Yang, Ping-Feng
Mechanical properties of thermoelectric (TE) materials are crucial for fabricating efficient and endurable TE devices. In this study, polycrystalline Bi3Se2Te thin films are grown on c-plane sapphire substrates at 250 degrees C and helium gas pressure of 6.5 x 10(-1) Torr using pulsed laser deposition (PLD). The structural, compositional, morphological and mechanical properties of Bi3Se2Te thin films are studied. The Bi3Se2Te thin films are highly c-axis oriented structure and exhibit the stoichiometric compositions of Bi3Se2Te phase. The hardness and Young\'s modulus of the Bi3Se2Te thin films are 5.6 +/- 0.2 GPa and 197.2 +/- 5.4 GPa, respectively, which determined by nanoindentation tests with the continuous stiffness measurement (CSM) mode. The true hardness of the Bi3Se2Te thin films is also calculated using the energy principle of nanoindentation contact. The micro-Vicker indentation-induced fracture behavior of the Bi3Se2Te thin films is observed and discussed. (C) 2016 Elsevier B.V. All rights reserved.
Study of La2O3/HfO2 Gate Dielectric for n-InAs Metal-Oxide-Semiconductor Capacitor
(2011)
Lin, Yueh-Chin
;
Chang, Chia-Hua
;
Kakushima, Kuniyuki
;
Iwai, Hiroshi
;
Shie, Tin-En
In this study, we investigate the composite La2O3/HfO2 high k dielectric as the gate oxide for n-InAs metal-oxide semiconductor (MOS) capacitor. The La2O3 was used for its high k value and HfO2 was used as the diffusion barrier and was deposited between La2O3 and InGaAs to prevent the Inter-diffusion between InAs and La(2)OZ(3) layers after post deposition annealing (PDA). Finally, we demonstrate the La2O3/HfO2 composite oxide structure as the high K dielectric for n-InAs MOS capacitor with enhanced capacitance for the MOS capacitor.