Browsing by Author "Lin, Ting-Yao"

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Channel Thickness Effect on High-Frequency Performance of Poly-Si Thin-Film Transistors
(2013-08-01)
Chen, Kun-Ming
;
Tsai, Tzu-I
;
Lin, Ting-Yao
;
Lin, Horng-Chih
;
Chao, Tien-Sheng
In this letter, we present the high-frequency performances of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with a nominal gate length of 0.22 mu m. Owing to the short gate length and adoption of salicide process, cutoff frequency (f (T)) of 17 GHz and maximum oscillation frequency of similar to 21 GHz are obtained. The result suggests that the poly-Si TFT technology is applicable to RF integrated circuits up to 2 GHz. In addition, we also investigate the effects of channel thickness on the high-frequency characteristics of poly-Si TFTs. We find that the variation of f (T) with channel thickness is mainly due to the change in transconductance.
Low-Operating-Voltage Ultrathin Junctionless Poly-Si Thin-Film Transistor Technology for RF Applications
(2012-11-01)
Tsai, Tzu-I
;
Chen, Kun-Ming
;
Lin, Horng-Chih
;
Lin, Ting-Yao
;
Su, Chun-Jung
In this letter, for the first time, we experimentally investigate the radio-frequency (RF) characteristics and low-frequency noise (LFN) of n-type planar junctionless (JL) poly-Si thin-film transistors (TFTs). The fabricated JL devices show remarkable dc performance with good current drive and a high on-current/off-current ratio of 8 x 10(7). Furthermore, with the implementation of an in situ phosphorus-doped channel architecture and a salicide process, the JL device with a channel length of 0.4 mu m exhibits a cutoff frequency (f(t)) of 3.36 GHz and a maximum oscillation frequency (f(max)) around 7.37 GHz at a drain bias of 2 V. As far as LFN is concerned, the JL device shows approximately four orders of magnitude lower drain-current noise power spectral density (S-id) over conventional inversion-mode counterparts. These results demonstrate that the JL poly-Si TFT technique is promising for RF modules implemented in system-on-panel applications.