Browsing by Author "Lin, Ting-Yi"

Now showing 1 - 10 of 10

Direct Observation of Dual-Filament Switching Behaviors in Ta2O5-Based Memristors
(2017-04-18)
Chang, Chia-Fu
;
Chen, Jui-Yuan
;
Huang, Chun-Wei
;
Chiu, Chung-Hua
;
Lin, Ting-Yi
Electron Beam Irradiation-Induced Deoxidation and Atomic Flattening on the Copper Surface
(2019-10-30)
Lin, Ting-Yi
;
Lee, Shih-Kuang
;
Huang, Guan-Min
;
Huang, Chun-Wei
;
Tai, Kuo-Lun
Electron beam (e-beam) has been developed for nanomaterial observation and moreover to induce structural evolutions in atomic scale. In this work, we demonstrate the deoxidation of cuprous oxide (Cu2O) and the formation of an atomically flat surface on a Cu nanowire by e-beam irradiation. To develop e-beam irradiation applications, the relation between e-beam radiation and the atomic surface is significant. Through the density functional theory simulation of atomic sputtering, an obvious disparity in the sputtering threshold has been found under different structural conditions, which leads to different structural evolutions. Both surface deoxidation and atomic surface flattening reactions have been identified as self-limiting and irreversible processes via in situ transmission electron microscope observation. Under e-beam irradiation, the dynamic mechanism of atomic surface flattening is driven by the convergence of total surface energy and confirmed by climbing-image nudged elastic band (ci-NEB) calculations. With precise control, e-beam irradiation reveals enormous potentials in atomic surface engineering.
In Situ Investigation of Defect-Free Copper Nanowire Growth
(2018-02-01)
Lin, Ting-Yi
;
Chen, Yong-Long
;
Chang, Chia-Fu
;
Huang, Guan-Min
;
Huang, Chun-Wei
The fabrication and placement of high purity nanometals, such as one-dimensional copper (Cu) nanowires, for interconnection in integrated devices have been among the most important technological developments in recent years. Structural stability and oxidation prevention have been the key issues, and the defect control in Cu nanowire growth has been found to be important. Here, we report the synthesis of defect-free single-crystalline Cu nanowires by controlling the surface-assisted heterogeneous nucleation of Cu atomic layering on the graphite-like loop of an amorphous carbon (a-C) lacey film surface. Without a metal-catalyst or induced defects, the high quality Cu nanowires formed with high aspect ratio and high growth rate of 578 nm/s. The dynamic study of the growth of heterogeneous nanowires was conducted in situ with a high-resolution transmission electron microscope. The study illuminates the new mechanism by heterogeneous nucleation control and laying the groundwork for better understanding of heterosurface-assisted nucleation of defect-free Cu nanowire on a-C lacey film.
Intensify the application of ZnO-based nanodevices in humid environment: O-2/H-2 plasma suppressed the spontaneous reaction of amorphous ZnO nanowires
(2014-06-02)
Lai, Chun-Yen
;
Chien, Tzu-Chiao
;
Lin, Ting-Yi
;
Ke, Teng
;
Hsu, Shih-Han
In this work, we have demonstrated that amorphous ZnO nanobranches (a-ZnO NBs) could spontaneously react from the crystalline ZnO NWs (c-ZnO NWs) at specific humid environment. The spontaneous reaction mechanism and result can be analyzed by humidity controlling and optical microscope (OM)/scanning electron microscope (SEM)/Kelvin probe force microscopy (KPFM)/transmission electron microscopy (TEM) system. We can make the c-ZnO NWs spontaneous reaction happen at different humid environments and suppress the a-ZnO NBs spontaneous reaction by oxygen/hydrogen plasma surface passivation. The hydrogen plasma surface treatment also can improve the UV sensing sensitivity more than twofold. This work provides the mechanism and methods of the a-ZnO NBs spontaneous growth and offers the passivation treatment for strengthening and enhancing ZnO-based nanodevice application in humid environment and UV light detection, respectively.
Nickel/Platinum Dual Silicide Axial Nanowire Heterostructures with Excellent Photosensor Applications
(2016-02)
Wu, Yen-Ting
;
Huang, Chun-Wei
;
Chiu, Chung-Hua
;
Chang, Chia-Fu
;
Chen, Jui-Yuan
Transition metal silicide nanowires (NWs) have attracted increasing attention as they possess advantages of both silicon NWs and transition metals. Over the past years, there have been reported with efforts on one silicide in a single silicon NW. However, the research on multicomponent silicides in a single silicon NW is still rare, leading to limited functionalities. In this work, we successfully fabricated beta-Pt2Si/Si/theta-Ni2Si, beta-Pt2Si/theta-Ni2Si, and Pt, Ni, and Si ternary phase axial NW heterostructures through solid state reactions at 650 degrees C. Using in situ transmission electron microscope (in situ TEM), the growth mechanism of silicide NW heterostructures and the diffusion behaviors of transition metals were systematically studied. Spherical aberration corrected scanning transmission electron microscope (Cs-corrected STEM) equipped with energy dispersive spectroscopy (EDS) was used to analyze the phase structure and composition of silicide NW heterostructures. Moreover, electrical and photon properties for the silicide nanowire heterostructures demonstrated promising applications in nano-optoeletronic devices. We found that Ni, Pt, and Si ternary phase nanowire heterostructures have an excellent infrared light sensing property which is absent in bulk Ni2Si or Pt2Si. The above results would benefit the further understanding of heterostructured nano materials. sensing
Observing phase transformation in CVD-grown MoS2 via atomic resolution TEM
(2018-09-14)
Tai, Kuo-Lun
;
Huang, Guan-Min
;
Huang, Chun-Wei
;
Tsai, Tsung-Chun
;
Lee, Shih-Kuang
We utilized in situ transmission electron microscopy to observe phase transformation in CVD-grown MoS2. Significantly, the reaction was performed under electron irradiation through appropriate control of the electron dose and exposure time. Moreover, we proposed a new route between the 2H and 1T phases that involved the higher energy states TS1/TS2.
Observing Solid-State Formation of Oriented Porous Functional Oxide Nanowire Heterostructures by in Situ TEM
(2018-09-01)
Ho, Jo-Hsuan
;
Ting, Yi-Hsin
;
Chen, Jui-Yuan
;
Huang, Chun-Wei
;
Tsai, Tsung-Chun
Transition metal oxide nanowires have attracted extensive attention because of their physical characteristics. Among them, ZnO nanowires have great potential. Due to the multifunctional properties of ZnO, devices built using ZnO-based heterostructures always perform well. In this study, interesting diffusion behavior between ZnO nanowires and Fe metal was observed by using in situ transmission electron microscopy. ZnO nanowires and Fe metal were annealed under ultrahigh vacuum (UHV) conditions at 800 K. By controlling the annealing time for the solid-state diffusion, porous Fe3O4 and unique ZnO/porous Fe3O4 nanowire heterostructures were formed. As-formed porous Fe3O4 nanowires with voids can be divided into two types by appearance: plate-like voids and zigzag-like hollow voids. From high-resolution transmission electron microscopy (HRTEM) images and fast Fourier transform (FFT) diffraction patterns, we found that plate-like voids formed along the {111} plane, which was the close-packed plane of Fe3O4, and that zigzag-like hollow voids formed along the {111}/{022} planes. Moreover, a transition region existed during diffusion, with a parallel relationship found between the Fe3O4 crystal with plate-like voids and the ZnO crystal. A sharp interface was determined to exist between the Fe3O4 crystal with zigzag-like hollow voids and ZnO. These oriented porous Fe3O4/ZnO axial nanowire heterostructures exhibited a unique appearance and interesting formation behavior. Furthermore, the structures had a high surface-area-to-volume ratio, which is promising for sensing applications.
Phosphorus-Doped p-n Homojunction ZnO Nanowires: Growth Kinetics in Liquid and Their Optoelectronic Properties
(2015-06-23)
Lee, Wei-Che
;
Chen, Jul-Yuan
;
Huang, Chun-Wei
;
Chiu, Chung-Hua
;
Lin, Ting-Yi
For wide-ranging applications in nanoscale electronic devices, durable and reproducible p-type nanostructures are essential. In this work, simple ZnO nano-wire (NW) p-n homojunctions were grown using a two-step hydrothermal synthesis method. P2O5 served as a doping source to obtain p-type ZnO NW\'s. The morphology of the ZnO NW arrays was examined using field emission scanning electron microscopy. The high-resolution transmission electron microscopy (HRTEM) image indicated that the ZnO NW p-n homojunction is single-crystalline with a < 0001 > growth direction. The distribution of P element was analyzed using energy-dispersive spectroscopy. The dynamic growth observation was conducted using liquid in situ TEM to investigate the ZnO nucleation and growth mechanism. We divided the ZnO nanocrystal precipitation into three processes. Whether two adjacent particles grow stably or not was found to be related to the distance. Moreover, the temperature-dependent photoluminescence spectra revealed that two extra emission peaks located at 416 and 435 nm were emitted from the ZnO NW p-n homojunction, which resulted from donor-acceptor recombination. In addition, the electron transport properties confirmed the rectification behavior of the multi ZnO NW p-n homojunctions. The turn-on voltage and the current were approximately 2.8 V and 10(-4) to 10(-5) A, respectively, under forward bias. The results indicate the potential application of ZnO NW p-n homojunctions as nanoscale light-emitting diodes.
Revealing conducting filament evolution in low power and high reliability Fe3O4/Ta2O5 bilayer RRAM
(2018-11-01)
Chang, Chia-Fu
;
Chen, Jui-Yuan
;
Huang, Guan-Min
;
Lin, Ting-Yi
;
Tai, Kuo-Lun
In this work, we used the polycrystalline-Fe3O4 to improve the reliability of the Ag/Ta2O5/Pt resistive random access memory (RRAM). In both the Ag/Ta2O5/Fe3O4/Pt and Ag/Fe3O4/Ta2O5/Pt structures, the switching properties for these bilayer RRAMs were measured in atmosphere and vacuum environments. The results demonstrated that the humidity would affect the Ag filament formation in different environments, and the Ta2O5 and Fe3O4 interface in a different sequence would change the performance of the device, particularly the Forming voltage. Furthermore, the switching voltage and reliability of these bilayer RRAMs was better than single-layer RRAM device, which significantly increased endurance, especially in the Ag/Fe3O4/Ta2O5/Pt device. We also observed the conducting filament shape and evolution during Forming via in/ex-situ transmission electron microscopy (TEM) in the Ag/Fe3O4/Ta2O5/Pt system. In low humidity, the conducting filament was composed of many weak filaments in a low-resistance state (LRS), where the grain boundaries in the Fe3O4 layer limited filament size. The results of energy dispersive spectrometry (EDS) analysis demonstrated that the filament was composed of Ag metal. This study provided detailed switching knowledge of the bilayer RRAM for improving the reliability and power consumption of the device and new design viewpoints of the RRAM structure in future applications.
Unique amorphization-mediated growth to form heterostructured silicide nanowires by solid-state reactions
(2019-05-05)
Lin, Wan-Jhen
;
Lin, Ting-Yi
;
Huang, Chun-Wei
;
Ting, Yi-Hsin
;
Tsai, Tsung-Chun
Transition metal silicide nanowires exhibit low resistivity, great thermal stability and excellent mechanical strength, contributing to their applications as interconnection and contact materials for future integrated circuits devices. In this work, we successfully fabricated two kinds of chromium silicide/silicon heterostructure nanowires through solid state reactions - bare Si/Cr3Si nanowires and Si/Cr5Si3-Al2O3 core-shell nanowires. The growth behaviors and diffusion mechanisms of the two silicide heterostructure nanowires were investigated with in-situ TEM at 700 degrees C. During the growth of chromium silicide nanowires, unique amorphous Si phase would form first in front of silicide nanowires. Also, we found that oxide-shell could control the diffusion process in silicon nanowires. With oxide-shell, compression stress would restrain the growth of chromium silicide in the radial direction but accelerate its growth rate in the axial direction. Additionally, Al2O3 shell reduced the radial expansion of chromium silicide nanowires and hindered Cr-rich phases with Cr5Si3 appearing as the first phase. The crystal structures of the nanowires have been identified to be single-crystalline A15 and D8m type structure of the intrinsic Cr3Si nanowires and Cr5Si3 nanowires, respectively. In addition to fundamental science, the significant study is beneficial for future processing techniques in nanotechnology and related applications. (C) 2019 Elsevier Ltd.