Browsing by Author "Lin, Tzu-Neng"

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Coherent and Polarized Random Laser Emissions from Colloidal CdSe/ZnS Quantum Dots Plasmonically Coupled to Ellipsoidal Ag Nanoparticles
(2017-02)
Yao, Yung-Chi
;
Yang, Zu-Po
;
Hwang, Jung-Min
;
Su, Hai-Ching
;
Haung, Jing-Yu
This study demonstrates the capability of controlling optical anisotropy of lasing emissions by manipulating the coupling strength spatially and spectrally between the oscillated electric field of emitted light and the localized surface plasmon (LSP) resonance for a random lasing medium composed of colloidal CdSe/ZnS quantum dots (QDs) and ellipsoidal silver nanoparticles (Ag NPs). Distinctive from the amplified spontaneous emission generally observed on colloidal CdSe/ZnS QDs, it has been found that lasing emissions of the revealed system exhibit clear interference features (coherent optical feedbacks) with low-threshold characteristics, mainly attributed to enhanced light scatterings and optical gains arisen in peripheral surfaces of ellipsoidal Ag NPs. Importantly, the relative orientation, between the oscillated electric field of emitted light from colloidal CdSe/ZnS QDs and the ellipse axis of Ag NPs, plays a critical role in selective excitation of LSP resonances leading to laser emissions with preferential optical polarizations. The achievement of spatial and spectral coupling of LSP resonance with colloidal QDs, respectively, by spin coating thin QDs film on Ag NPs and control of the Ag NP geometry makes the present system one of the promising candidates of colloidal QDs-based random lasers to achieve coherent and polarized lasing emissions.
Enhanced Color-Conversion Efficiency of Hybrid Nanostructured-Cavities InGaN/GaN Light-Emitting Diodes Consisting of Nontoxic InP Quantum Dots
(2017-09-01)
Liu, Che-Yu
;
Chen, Tzu-Pei
;
Huang, Jhih-Kai
;
Lin, Tzu-Neng
;
Huang, Chia-Yen
Color-conversion efficiency enhancement of hybrid light-emitting diodes (LEDs) by cadmium-free colloidal quantum dots (QDs) and a novel selective area nanocavities structure has been demonstrated. Combining nanoimprinting and photolithography techniques, nanocavities array can be fabricated at designated locations on the LEDs. The color-conversion efficiency of selective area nanocavities LED can be enhanced by up to 13%. The significant color-conversion efficiency enhancement is attributed to resonance of InP QDs emission in nanocavities and nonradiative energy transfer from LED active layers to InPQDs, which has been investigated and characterized by finite domain time-domain simulation, electroluminescence, and time-resolved photoluminescence measurements. This hybrid nanostructured device, therefore, exhibits a great potential for the applications of multicolor lighting sources and micro-LED.
Enhanced Conversion Efficiency of III-V Triple-junction Solar Cells with Graphene Quantum Dots
(2016-12-16)
Lin, Tzu-Neng
;
Santiago, Svette Reina Merden S.
;
Zheng, Jie-An
;
Chao, Yu-Chiang
;
Yuan, Chi-Tsu
Graphene has been used to synthesize graphene quantum dots (GQDs) via pulsed laser ablation. By depositing the synthesized GQDs on the surface of InGaP/InGaAs/Ge triple-junction solar cells, the short-circuit current, fill factor, and conversion efficiency were enhanced remarkably. As the GQD concentration is increased, the conversion efficiency in the solar cell increases accordingly. A conversion efficiency of 33.2% for InGaP/InGaAs/Ge triple-junction solar cells has been achieved at the GQD concentration of 1.2 mg/ml, corresponding to a 35% enhancement compared to the cell without GQDs. On the basis of time-resolved photoluminescence, external quantum efficiency, and work-function measurements, we suggest that the efficiency enhancement in the InGaP/InGaAs/Ge triple-junction solar cells is primarily caused by the carrier injection from GQDs to the
Enhanced external quantum efficiency in GaN-based vertical-type light-emitting diodes by localized surface plasmons
(2016-03-03)
Yao, Yung-Chi
;
Hwang, Jung-Min
;
Yang, Zu-Po
;
Haung, Jing-Yu
;
Lin, Chia-Ching
Enhancement of the external quantum efficiency of a GaN-based vertical-type light emitting diode (VLED) through the coupling of localized surface plasmon (LSP) resonance with the wave-guided mode light is studied. To achieve this experimentally, Ag nanoparticles (NPs), as the LSP resonant source, are drop-casted on the most top layer of waveguide channel, which is composed of hydrothermally synthesized ZnO nanorods capped on the top of GaN-based VLED. Enhanced light-output power and external quantum efficiency are observed, and the amount of enhancement remains steady with the increase of the injected currents. To understand the observations theoretically, the absorption spectra and the electric field distributions of the VLED with and without Ag NPs decorated on ZnO NRs are determined using the finite-difference time-domain (FDTD) method. The results prove that the observation of enhancement of the external quantum efficiency can be attributed to the creation of an extra escape channel for trapped light due to the coupling of the LSP with wave-guided mode light, by which the energy of wave-guided mode light can be transferred to the efficient light scattering center of the LSP.
Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots
(2017-08-02)
Lin, Tzu-Neng
;
Santiago, Svette Reina Merden
;
Yuan, Chi-Tsu
;
Chiu, Kuo-Pin
;
Shen, Ji-Lin
ablation. The synthesized GQDs can improve the optical and electrical properties of InGaN/InAlGaN UV light emitting diodes (LEDs) remarkably. An enhancement of electroluminescence and a decrease of series resistance of LEDs were observed after incorporation of GQDs on the LED surface. As the GQD concentration is increased, the emitted light (series resistance) in the LED increases (decreases) accordingly. The light output power achieved a maximum increase as high as 71% after introducing GQDs with the concentration of 0.9 mg/ml. The improved performance of LEDs after the introduction of GQDs is explained by the photon recycling through the light extraction from the waveguide mode and the carrier transfer from GQDs to the active layer.
Greener Luminescent Solar Concentrators with High Loading Contents Based on in Situ Cross-Linked Carbon Nanodots for Enhancing Solar Energy Harvesting and Resisting Concentration Induced Quenching
(2018-10-10)
Talite, Maria Jessabel
;
Huang, Hsiu-Ying
;
Wu, Yao-Hsuan
;
Sena, Princess Genevieve
;
Cai, Kun-Bin
A luminescent solar concentrator (LSC) is composed of loaded luminophores and a waveguide that can be employed to harvest and concentrate both direct and diffused sunlight for promising applications in solar windows. Thus far, most of efficient LSCs still relied on the heavy-metal-containing colloidal quantum dots (CQDs) dispersed into a polymer matrix with a very low loading (typically <1 wt %). Such low-loading constraint is required to mitigate the concentration induced quenching (CIQ) and maintain high optical quality and film uniformity, but this would strongly reduce the light absorbing efficiency. To address all issues, greener LSCs with high loading concentration were prepared by in situ cross-linking organosilane-functionalized carbon nanodots (Si-CNDs), and their photophysical properties relevant to LSC operation were studied. The PL emission is stable and does not suffer from the severe CIQ effect for cross-linked Si-CNDs even with 25 wt % loadings, thus exhibiting high solid-state quantum yields (QYs) up to 45 +/- 5% after the calibration of the reabsorption losses. Furthermore, such LSCs can still hold high optical quality and film uniformity, leading to low scattering losses and high internal quantum efficiency of similar to 22%. However, the reabsorption losses need to be further addressed to realize large-area LSCs based on earth-abundant, cost-effective CNDs.
Highly Efficient Flexible Hybrid Nanocrystal-Cu(In,Ga)Se-2 (CIGS) Solar Cells
(2015-01-21)
Liao, Yu-Kuang
;
Brossard, Mael
;
Hsieh, Dan-Hua
;
Lin, Tzu-Neng
;
Charlton, Martin D. B.
A novel scheme for hybridizing inkjet-printed thin film Cu(In,Ga)Se-2 (CIGS) solar cells with self-assembled clusters of nanocrystal quantum dots (NQDs), which provides a 10.9% relative enhancement of the photon conversion efficiency (PCE), is demonstrated. A non-uniform layer of NQD aggregates is deposited between the transparent conductive oxide and a CdS/CIGS p-n junction using low cost pulsed-spray deposition. Hybridization significantly improves the external quantum efficiency of the hybrid devices in the absorption range of the NQDs and in the red to near-IR parts of the spectrum. The low wavelength response enhancement is found to be induced by luminescent down-shifting (LDS) from the NQD layer, while the increase at longer wavelengths is attributed to internal scattering from NQD aggregates. LDS is demonstrated using time-resolved spectroscopy, and the morphology of the NQD layer is investigated in fluorescence microscopy and cross-sectional transmission electron microscopy. The influence of the NQD dose on the PCE of the hybrid devices is investigated and an optimum value is obtained. The low costs and limited material consumptions associated with pulsed-spray deposition make these flexible hybrid devices promising candidates to help push thin-film photovoltaic technology towards grid parity.
P-Type Doping of WS2 Quantum Dots via Pulsed Laser Ablation
(2018-12-01)
Caigas, Septem P.
;
Cheng, Min-Chiang
;
Lin, Tzu-Neng
;
Santiago, Svette Reina Merden S.
;
Yuan, Chi-Tsu
Doping provides an advantage to engineering the optical and electrical characteristics of transition-metal dichalcogenides (TMDs). Here, we report the doping of WS2 quantum dots (QDs) with diethylenetriamine (DETA) using pulsed laser ablation. The synthesized DETA-doped 2H-WS2 QDs with an average size of similar to 6 nm have been demonstrated by transmission electron microscopy. With the introduction of DETA during pulsed laser ablation, current modulation, carrier concentration, and field-effect mobility are greatly enhanced, demonstrating a successful doping in WS2 QDs. The positive shift of the threshold voltage in gate dependent conductance measurements reveals p-type doping for DETA-doped WS2 QDs. A remarkable improvement in photoluminescence in WS2 QDs by 74-fold has been achieved after DETA doping. An anomalous dopant-dependent negative photoconductivity was observed for WS2 QDs, originating from light-induced desorbing of water (oxygen) molecules on the surface. The proposed doping approach can provide a vehicle to modulate the optical and electrical properties in WS2 QDs and could be important in the performance improvement of WS2-QD-based devices.
Tunnel injection from WS2 quantum dots to InGaN/GaN quantum wells
(2018-01-01)
Santiago, Svette Reina Merden
;
Caigas, Septem P.
;
Lin, Tzu-Neng
;
Yuan, Chi-Tsu
;
Shen, Ji-Lin
We propose a tunnel-injection structure, in which WS2 quantum dots (QDs) act as the injector and InGaN/GaN quantum wells (QWs) act as the light emitters. Such a structure with different barrier thicknesses has been characterized using steady-state and time-resolved photoluminescence (PL). A simultaneous enhancement of the PL intensity and PL decay time for the InGaN QW were observed after transfer of charge carriers from the WS2-QD injector to the InGaN-QW emitter. The tunneling time has been extracted from the time-resolved PL, which increases as the barrier thickness is increased. The dependence of the tunneling time on the barrier thickness is in good agreement with the prediction of the semiclassical Wentzel-Kramers-Brillouin model, confirming the mechanism of the tunnel injection between WS2 QDs and InGaN QWs.
Tunnel injection from WS2 quantum dots to InGaN/GaN quantum wells (vol 8, pg 15399, 2018)
(2018-01-01)
Santiago, Svette Reina Merden
;
Caigas, Septem P.
;
Lin, Tzu-Neng
;
Yuan, Chi-Tsu
;
Shen, Ji-Lin