Browsing by Author "Lin, W"

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A novel two-step etching to suppress the charging damages during metal etching employing helicon wave plasma
(1998-06-01)
Cheng, HC
;
Lin, W
;
Kang, TK
;
Perng, YC
;
Dai, BT
A two-step etching has been performed to eliminate the plasma charging damages during helicon-wave plasma metal etching without selectivity loss, This technique utilized a normal etching recipe to remove the Al film and followed by an optimized etching recipe for the overetching step. By increasing the bias power and decreasing the source power, the optimum etching recipe can cause the plasma more directionally and reduce the Al charging damages. Eventually, the damage mechanism was also reported.
Charging damages to gate oxides in a helicon O-2 plasma
(1997-12-01)
Lin, W
;
Kang, TK
;
Perng, YC
;
Dai, BT
;
Cheng, HC
After the exposure of metal oxide semiconductor (MOS) capacitors with antenna structures to the helicon O-2 plasma, the leakage current. charge-to-breakdown (Q(bd)) and capacitance-voltage (C-V) curves have been characterized to realize the charging damages. The results indicate that the quasi static C-V(QSCV) distortion and Q(bd) depend on the exposure time rather than the antenna ratio. The QSCV and Q(bd) Show a two stage degradation as the exposure time increases. The leakage current increases slightly for the specimens exposed to the plasma for less than 120 s, and increases considerably for the ones with the exposure time of 300 s. Based on these results, the degradation mechanism of gate oxides under the helicon O-2 plasma is established.
Charging damages to gate oxides in a helicon O-2 plasma
(1997-12-01)
Lin, W
;
Kang, TK
;
Perng, YC
;
Dai, BT
;
Cheng, HC
After the exposure of metal oxide semiconductor (MOS) capacitors with antenna structures to the helicon O-2 plasma, the leakage current. charge-to-breakdown (Q(bd)) and capacitance-voltage (C-V) curves have been characterized to realize the charging damages. The results indicate that the quasi static C-V(QSCV) distortion and Q(bd) depend on the exposure time rather than the antenna ratio. The QSCV and Q(bd) Show a two stage degradation as the exposure time increases. The leakage current increases slightly for the specimens exposed to the plasma for less than 120 s, and increases considerably for the ones with the exposure time of 300 s. Based on these results, the degradation mechanism of gate oxides under the helicon O-2 plasma is established.
Effects of helicon-wave-plasma etching on the charging damage of aluminum interconnects
(1998-07-01)
Lin, W
;
Kang, TK
;
Perng, YC
;
Dai, BT
;
Cheng, HC
The etching parameters of aluminum in the helicon wave plasma are characterized to elucidate the mechanism of charging damage. By increasing the ion energy and decreasing the plasma density via increase of the bias power and decrease of the source power, respectively, we can significantly reduce charging damage, On the basis of this concept, we develop a two-step etching technique to suppress the charging damage without selectivity loss. Such a high-density plasma etching technique will be very suitable for the formation of high-density, and narrow-line interconnects.
Mode emission characteristics of semiconductor microdisc and microring lasers
(1996-10-01)
Lee, TD
;
Cheng, PH
;
Pan, JS
;
Tai, K
;
Lai, Y
We fabricate both microdisc and microring InGaAsP-InGaAs quantum well semiconductor lasers using an etching-and-bonding technique. Their emission properties are studied by optical pumping at 77 K. Single mode lasing is achieved for discs with a diameter of 5 mu m. Multimode emission is observed for rings with larger diameters. Both fundamental and higher order lasing modes are observed and are found to exhibit interesting emission characteristics.
The effect of indium impurity on the DC-etching behaviour of aluminum foil for electrolytic capacitor usage
(1997-09-01)
Lin, W
;
Tu, GC
;
Lin, CF
;
Peng, YM
;
材料科學與工程學系
The effects of indium impurity on the etched morphology of high purity aluminium foils for electrolytic capacitor usage were investigated. The indium impurity was present either in as-received aluminium foils or deposited purposely on the foil surface through immersion-reduction reaction. The rolling line effect can be improved through introducing deposited indium on foil surfaces by immersion of the foil into In(NO3)(3) solution prior to DC-etching. Under a high immersion temperature and more concentrated Ir(NO3)(3) condition, surface etching competes with tunnel etching, and the foil thickness clearly decreases. Under low temperature and dilute In(NO3)(3) condition, surface etching is inhibited and tunnel etching prevails. The different DC-etching behaviour under the two In-deposition conditions is explained through the energy state difference between the two deposited-In and the activation energy difference between surface etching and tunnel etching. The modification of etchability by indium on aluminium surface is stronger than that of lead. This facilitates employing lower temperature and dilute In(NO3)(3) condition in the immersion-reduction process to optimize the etchability. (C) 1997 Elsevier Science Ltd.
The effect of lead impurity on the DC-etching behaviour of aluminum foil for electrolytic capacitor usage
(1996-06-01)
Lin, W
;
Tu, GC
;
Lin, CF
;
Peng, YM
;
材料科學與工程學系
The effects of lead impurity on the etched morphology of high purity aluminum foils for electrolytic capacitor applications were investigated in this work. The lead impurity was either present in as-received aluminum foils or deposited purposely on the foil surface through an immersion-reduction reaction. The amount and distribution of deposited lead varies with the lead content in as-received foil. The as-received foil with higher lead content gave a higher concentration and a more uniform distribution of deposited lead. Uniformly distributed vertical tunnel etchings were obtained when high lead foil, formed by immersion as-received high lead foil in Pb(NO3)(2) solution, was subject to DC-etching. For the as-received lower lead foils, the deposited lead was concentrated in rolling lines which resulted in surface etching along rolling lines. Both the surfacial and cross-sectional etching morphologies are presented in this study, together with the etching mechanism discussed. Copyright (C) 1996 Elsevier Science Ltd.
The effect of lead impurity on the DC-etching behaviour of aluminum foil for electrolytic capacitor usage
(1996-06-01)
Lin, W
;
Tu, GC
;
Lin, CF
;
Peng, YM
;
材料科學與工程學系
The effects of lead impurity on the etched morphology of high purity aluminum foils for electrolytic capacitor applications were investigated in this work. The lead impurity was either present in as-received aluminum foils or deposited purposely on the foil surface through an immersion-reduction reaction. The amount and distribution of deposited lead varies with the lead content in as-received foil. The as-received foil with higher lead content gave a higher concentration and a more uniform distribution of deposited lead. Uniformly distributed vertical tunnel etchings were obtained when high lead foil, formed by immersion as-received high lead foil in Pb(NO3)(2) solution, was subject to DC-etching. For the as-received lower lead foils, the deposited lead was concentrated in rolling lines which resulted in surface etching along rolling lines. Both the surfacial and cross-sectional etching morphologies are presented in this study, together with the etching mechanism discussed. Copyright (C) 1996 Elsevier Science Ltd.