Browsing by Author "Lin, W. H."
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Item type:Item, Effects of electronic confinement and substrate on the low-temperature growth of Pb islands on Si(100)-2 x 1 surfaces(2010-01-01) ;Hsu, C. C. ;Lin, W. H. ;Ou, Y. S. ;Su, W. B.Chang, C. S.The growth of Pb films on the Si(1 0 0)-2 x 1 surface has been investigated at low temperature using scanning tunneling microscopy Although the orientation of the substrate is (1 0 0), flat-top Pb islands with (1 1 1) surface can be observed The island thickness is confined within four to nine atomic layers at low coverage Among these islands. those with a thickness of six layers are most abundant Quantum-well states in Pb(1 1 1) islands of different thickness are acquired by scanning tunneling spectioscopy. They are found to be identical to those taken oil the Pb(1 1 1) islands grown oil the Si(1 1 1)7 x 7 surface. Besides Pb(1 1 1) islands. two additional types of Pb islands are formed. rectangular flat-top Pb(1 0 0) islands and rectangular three-dimensional (3D) Pb islands, and both their orientations rotate by 90 degrees from a terrace to the adjacent one This phenomenon implies that the structures of Pb(1 0 0) and 3D islands are influenced by the Si(1 0 0)-2 x 1 substrate (C) 2009 Elsevier B.V. All rights reservedItem type:Item, Long Photon Lifetime from Microdisk Cavity Laser with Type II GaSb/GaAs Quantum Dots(2013-01-01) ;Hsu, K. S. ;Chang, C. C. ;Lin, W. H. ;Shih, M. H.Lin, S. Y.Microdisk lasers with active region made of type II GaSb/GaAs quantum dots on the GaAs substrate have been demonstrated. Lasing wavelengths near 1 mu m was achieved and longer photon lifetime from type II structure also observed. (C) 2013 Optical Society of America