Browsing by Author "Lin, Wen-Zhang"

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A 256b-Wordlength ReRAM-based TCAM with 1ns Search-Time and 14x Improvement in WordLength-EnergyEfficiency-Density Product using 2.5T1R cell
(2016)
Lin, Chien-Chen
;
Hung, Jui-Yu
;
Lin, Wen-Zhang
;
Lo, Chieh-Pu
;
Chiang, Yen-Ning
A ReRAM-Based 4T2R Nonvolatile TCAM Using RC-Filtered Stress-Decoupled Scheme for Frequent-OFF Instant-ON Search Engines Used in IoT and Big-Data Processing
(2016-11)
Chang, Meng-Fan
;
Huang, Lie-Yue
;
Lin, Wen-Zhang
;
Chiang, Yen-Ning
;
Kuo, Chia-Chen
This paper outlines the RC-filtered stress-decoupled (RCSD) 4T2R nonvolatile TCAM (nvTCAM) with the following benefits: 1) reduced NVM-stress; 2) reduced ML parasitic load; and 3) suppression of match-line (ML) leakage current from match cells. The RCSD-4T2R cell achieves a 6x reduction in NVM-stress, a 2x increase in maximum wordlength, and a 2x reduction in search delay. In this paper, we also outline two search schemes, referred to as dynamic source-line pulse controlled (DSL-PC) search and dataline-pulse controlled (DL-PC) search, which were developed specifically for the RCSD-4T2R nvTCAM. We fabricated a 128 x 32 b RCSD-4T2R nvTCAM macro with HfO ReRAM using a 180 nm CMOS process. Using the DSL-PC and DL-PC schemes, the measured search delay of the RCSD-4T2R nvTCAM macro was 1.2 ns under typical VDD.