Browsing by Author "Lin, Y. H."

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13 Gbit/s WDM-OFDM PON using RSOA-based colourless ONU with seeding light source in local exchange
(2011-10-27)
Chow, C. W.
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Yeh, C. H.
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Wu, Y. F.
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Chen, H. Y.
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Lin, Y. H.
Optical-carrier-distribution using reflective-semiconductor-optical-amplifier (RSOA)-based colorless optical-networking-unit (ONU) is a promising candidate for the wavelength-division-multiplexed passive-optical-network (WDM-PON). However, commercial available RSOA has a typical modulation-bandwidth of similar to 1 GHz, which is not enough for the future bandwidth demand. Here we demonstrate a WDM-PON using 1 GHz bandwidth RSOA-based ONU, which can be operated up to 13 Gbit/s. Experimental results show that 20 km singlemode-fibre transmission of the 13 Gbit/s orthogonal-frequency-division-multiplexed (OFDM) signal can be achieved with bit-error rate lower than the forward error correction threshold.
A computational study on the energetics and mechanisms for the dissociative adsorption of SiHx(x=1-4) on W(111) surface
(2016-01-30)
Lin, Y. H.
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Raghunath, P.
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Lin, M. C.
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應用化學系
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Department of Applied Chemistry
The adsorption and dissociation mechanisms of SiHx(x = 1-4) species on W(111) surface have been investigated by using the periodic density functional theory with the projector-augmented wave approach. The adsorption of all the species on four surface sites: top (T), bridge (B), shallow (S), and deep (D) sites have been analyzed. For SiH4 on a top site, T-SiH4(a), it is more stable with an adsorption energy of 2.6 kcal/mol. For SiH3, the 3-fold shallow site is most favorable with adsorption energy of 46.0 kcal/mol. For SiH2, its adsorption on a bridge site is most stable with 73.0 kcal/mol binding energy, whereas for SiH and Si the most stable adsorption configurations are on 3-fold deep sites with very high adsorption energies, 111.8 and 134.7 kcal/mol, respectively. The potential energy surfaces for the dissociative adsorption of all SiH species on the W(111) surface have been constructed using the CINEB method. The barriers for H-atom migration from SiHx(a) to its neighboring W atoms, preferentially on B-sites, were predicted to be 0.4, 1.0, 4.5 and, 8.0 kcal/mol, respectively, for x= 4, 3, 2, and 1, respectively. The adsorption energy of the H atom on a bridge site on the clean W(1 1 1) surface was predicted to be 65.9 kcal/mol, which was found to be slightly affected by the co-adsorption of SiHx-1 within +/- 1 kcal/mol. (C) 2015 Elsevier B.V. All rights reserved.
A New Observation of Strain-Induced Slow Traps in Advanced CMOS Technology with Process-Induced Strain Using Random Telegraph Noise Measurement
(2009)
Lin, M. H.
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Hsieh, E. R.
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Chung, Steve S.
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Tsai, C. H.
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Liu, P. W.
In this paper, the hot-carrier induced oxide trap and its correlation with enhanced degradation in strained CMOS devices have been reported for the first time. First, the I(D)-RTN (Drain Current Random Telegraph Noise) has been employed to study the HC stress induced slow oxide traps in strained nMOSFETs and pMOSFETs. Secondly, different behavior of the slow traps in nMOSFET and pMOSFET has been observed. Results show that the vertical compressive strain generates extra oxide defects and induces more scattering after the HC stress in CESL nMOSFET. This vertical strain in CESL, also contributes to a non-negligible amount of extra device degradation. While, SiGe S/D pMOSFET shows different behavior in that the compressive strain in this structure shows no impact on its reliability.
Ab initio chemical kinetics for the N2H4 + NOx (x=1-3) reactions and related reverse processes
(2014-10-15)
Raghunath, P.
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Lin, Y. H.
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Lin, M. C.
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交大名義發表
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應用化學系
The kinetics and mechanisms for N2H4 + NOx, (x = 1-3) reactions and the related reverse reactions have been investigated by ab initio molecular orbital theory based on the CCSD(T)/CBS/ICCSD/6-31G(d,p), CCSD(T)//B3LYP and CCSD(T)//BH&HLYP methods with the 6-311++G(3df,2p) basis set. These reactions are important to the propulsion chemistry of the N2H4-N2O4 propellant system. The results show that the reactions of N2H4 with NO and NO2 producing N2H3 + HNO and N2H3 + c-HONO by H-abstraction with 33.7 and 10.3 kcal/mol barriers, respectively, are dominant. For the N2H4 + NO3(D-3h) reaction via two pre-reaction van der Waals complexes with 0.5 kcal/mol and -1.6 kcal/mol binding energies produces HNO3 + N2H3 by H-abstraction and t-HONO + N2H3O by concerted O- and H-atom transfers, respectively. The predicted enthalpies of formation of various products at 0 K are in good agreement with available experimental data within reported errors. Furthermore, the rate constants for the forward and some key reverse reactions have been predicted in the temperature range 300-2000 K with tunneling corrections using transition state theory (for direct abstraction) and variational Rice-Ramsperger-Kassel-Marcus theory (for association! decomposition) by solving the master equation. (C) 2014 Elsevier B.V. All rights reserved.
An Electrically Tunable Focusing Pico Projector Using a Liquid Crystal Lens as an Active Optical Element
(2011)
Lin, H. C.
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Chen, M. S.
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Lin, Y. H.
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光電工程學系
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Department of Photonics
An electrically tunable pico projector adapting a liquid crystal (LC) lens as an active optical element is demonstrated. The electrically tunable focusing properties of the pico-projectors with different aperture sizes of the LC lenses are also investigated. The tunable ranges of the electrically tunable pico projectors are 350cm to 14cm. The response times are 1.2sec for the LC lens of 2mm aperture and around 5sec for the LC lens of 4mm aperture. The image performance of the electrically tunable focusing pico projector is demonstrated.
Convergent optical wired and wireless long-reach access network using high spectral-efficient modulation
(2012-04-09)
Chow, C. W.
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Lin, Y. H.
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光電工程學系
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Department of Photonics
To provide broadband services in a single and low cost perform, the convergent optical wired and wireless access network is promising. Here, we propose and demonstrate a convergent optical wired and wireless long-reach access networks based on orthogonal wavelength division multiplexing (WDM). Both the baseband signal and the radio-over-fiber (ROF) signal are multiplexed and de-multiplexed in optical domain, hence it is simple and the operation speed is not limited by the electronic bottleneck caused by the digital signal processing (DSP). Error-free de-multiplexing and down-conversion can be achieved for all the signals after 60 km (long-reach) fiber transmission. The scalability of the system for higher bit-rate (60 GHz) is also simulated and discussed. (C)2012 Optical Society of America
Device Instability of ReRAM and a Novel Reference Cell Design for Wide Temperature Range Operation
(2017-09-01)
Lin, Y. H.
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Lin, Y. Y.
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Lee, F. M.
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Ho, Y. H.
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Hsu, K. C.
This letter addresses two difficult challenges for transition metal oxide resistive random access memories (ReRAMs)-sensitivity to operation temperature and random fluctuation of resistance value. A careful study of a WOx ReRAM array reveals that these devices are unstable and their read currents fluctuate with time due to random telegraph noise and structure relaxation. Consequently, even after careful programming, the current distribution can broaden with time and tail bit population grows. Furthermore, ReRAM state is sensitive to temperature and a reference cell made of the same device material must be used. Thus, although the broadening of read current distribution may be tolerated by creating a larger RESET/SET memory window, the current fluctuation still makes it impossible to predict the output of the reference cell, leading to array malfunction. This letter investigates the current (resistance) instability in detail and proposes a reference array with a novel trimming method that can stabilize the reference current level. The proposed reference array has very good dc stress reliability as well as wide-range temperature tracking performance from -40 degrees C to 85 degrees C.
Electrical measurements on iridium dioxide nanorods
(2006)
Lin, Y. H.
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Lee, T. C.
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Lin, J. J.
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Chang, H. M.
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Huang, Y. S.
Iridium dioxide (IrO2) nanorods have been prepared by metal-organic chemical vapor deposition method. Applying the standard electron-beam lithography technique, a single nanorod with a diameter of I 10 nm is contacted by three Cr/Au fingers from above. The resistance measurements on this nanorod have been performed between 10 and 300 K, using different probe configurations. We observe that the resistivity rho of the nanorod has a value <= 120 mu Omega cm at 300 K. On the other hand, the temperature dependence of the contact resistance R obeys the law logR proportional to T-1/2 below 100 K. The conduction process through the contact is ascribed to the transport of electrons via hopping in granular metals accidentally formed at the contact region.
Electrical transport studies of individual IrO(2) nanorods and their nanorod contacts
(2008-01-30)
Lin, Y. H.
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Sun, Y. C.
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Jian, W. B.
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Chang, H. M.
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Huang, Y. S.
We have studied the electrical transport properties of individual single-crystalline IrO(2) nanorods prepared by the metal-organic chemical vapour deposition method. With the help of the standard electron-beam lithographic technique, individual nanorods are contacted by Cr/Au submicron electrodes from above. Utilizing two-probe, three-probe and four-probe measurement configurations, not only the intrinsic electrical transport properties of the individual nanorods but also the electronic contact resistances, Rc(T), have been determined from 300 K down to liquid-helium temperatures. Our measured resistivity behaviour of the nanorods is in close agreement with the current theoretical understanding of this rutile material. On the other hand, we found that the temperature behaviour of the electronic contact resistance obeys the law log R(C) alpha T(-1/2) over an extremely wide temperature range, from approximately 100 K down to liquid-helium temperatures. This latter conduction process is ascribed to the hopping of electrons through nanoscale Cr granules and/or an amorphous coating incidentally formed at the interface between the submicron Cr/Au electrode and the nanorod.
Electrical transport studies of individual IrO2 nanorods and their nanorod contacts
(2008-01-30)
Lin, Y. H.
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Sun, Y. C.
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Jian, W. B.
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Chang, H. M.
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Huang, Y. S.
We have studied the electrical transport properties of individual single-crystalline IrO2 nanorods prepared by the metal-organic chemical vapour deposition method. With the help of the standard electron-beam lithographic technique, individual nanorods are contacted by Cr/Au submicron electrodes from above. Utilizing two-probe, three-probe and four-probe measurement configurations, not only the intrinsic electrical transport properties of the individual nanorods but also the electronic contact resistances, Rc(T), have been determined from 300 K down to liquid-helium temperatures. Our measured resistivity behaviour of the nanorods is in close agreement with the current theoretical understanding of this rutile material. On the other hand, we found that the temperature behaviour of the electronic contact resistance obeys the law log R-C alpha T-1/2 over an extremely wide temperature range, from approximately 100 K down to liquid-helium temperatures. This latter conduction process is ascribed to the hopping of electrons through nanoscale Cr granules and/or an amorphous coating incidentally formed at the interface between the submicron Cr/Au electrode and the nanorod.
Liquid crystal cell with graphene electrodes
(2017-01-01)
Marinova, V.
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Tong, Z. F.
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Petrov, S.
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Lin, S. H.
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Chen, M. S.
We demonstrate a graphene-based nematic liquid crystal cells fabricated by photo alignment technique. The modulation characteristics have been measured revealing that photo alignment method shows great potential for protecting the graphene layer on glass substrate during LC device fabrication.
Liquid crystal light valve operating at near infrared spectral range
(2016-04)
Marinova, V.
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Chi, C. H.
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Tong, Z. F.
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Liu, R. C.
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Berberova, N.
A near infrared sensitive liquid crystal light valve, based on Ru-doped Bi12TiO20 (BTO:Ru) inorganic crystal and liquid crystal is proposed. The two-beam mixing experiments at Raman-Nath regime show promising gain value at 1064 nm. An image evolution through the proposed device is demonstrated supporting all optical switching property.
More Strain and Less Stress- The Guideline for Developing High-End Strained CMOS Technologies with Acceptable Reliability
(2008)
Chung, Steve S.
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Hsieh, E. R.
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Huang, D. C.
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Lai, C. S.
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Tsai, C. H.
In this paper, the design guideline with emphasis on CMOS device reliability has been addressed. Advanced 65nm CMOS devices with various strain engineering were evaluated. For nMOSFETs, charge pumping (CP) measurement is efficient for their reliability characterizations. Although biaxial strained SiGe-channel device provides good driving current enhancement, it suffers from the Ge out-diffusion such that exhibits worse reliability. The SSOI device exhibits good hot-carrier immunity, but its interface quality needs special care during the process. In addition, SiC on S/D device is an alternative for high current enhancement, but its off-state junction leakage is serious. Then, CESL device becomes the most promising technology with high performance and the best reliability, especially with process simplicity. For pMOSFETs, both uniaxial and biaxial strained devices have been studied. For the first time, an accurate representation of interface trap (Nit) profiling, suitable for HC and NBTI analyses, has been developed by an improved DCIV method. The uniaxial-strained device shows much better reliability, in particular a special class of SiGe S/D device with EDB design seems to be promising. These results provide a valuable guideline for the aggressive design of strained CMOS technologies.
New Observation of an Abnormal Leakage Current in Advanced CMOS Devices with Short Channel Lengths Down to 50nm and Beyond
(2008)
Hsieh, E. R.
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Chung, Steve S.
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Lin, Y. H.
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Tsai, C. H.
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Liu, P. W.
In this work, for the first time, an abnormal leakage current has been observed in MOSFET with 50nm channel length and beyond. This effect shows that, in an ultra-short channel MOSFET, sub-threshold swing (SS) and I(off) are decreased for back-biased nMOSFET and pMOSFET. This effect is attributed to the BJT-induced current from the source to the drain. An experimental approach has been used to verify the existence of this BJT current component. As a consequence, this BIT current can be reduced with appropriate control of the S/D-to-substrate junction. As an application of the approach to advanced embedded-SiC MOSFET with various splits, it was found that a higher band-offset of S/D-to-substrate junction will give rise to a larger the BJT ballistic transport current. This provides us important information on reducing the leakage current for advanced CMOS with 50nm and beyond.
New observations on the uniaxial and biaxial strain-induced hot carrier and NBTI Reliabilities for 65nm node CMOS devices and beyond
(2006)
Chung, Steve S.
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Huang, D. C.
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Tsai, Y. J.
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Lai, C. S.
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Tsai, C. H.
In this paper, new observations on the uniaxial and biaxial strain-induced hot carrier reliability and/or NBTI in nMOSFET and pMOSFET respectively have been reported for the first time. Uniaxial and biaxial strained nMOSFET and pMOSFET have been extensively examined. Different mechanisms are responsible for different strains in nMOSFET and pMOSFET. For the nMOFETs, it was found that uniaxial strain device has comparable HC reliability with the control device, while biaxial SiGe-strained device exhibits a much worse reliability. This is related to a large impact ionization rate in a biaxial strain which leads to a much worse reliability. For the pMOSFETs, either uniaxial or biaxial strained device shows a comparable amount of HC degradation, while SiGe S/D strained structure might be better considering process complexity, performance, and reliability Although NBTI is still a great concern in SiGe S/D devices, embedded SiGe S/D technique can improve greatly the device NBTI reliability. These results provide a valuable guideline for the present 65nm and beyond CMOS device design with focus on the strain engineering.
Rayleigh Backscattering Circumvention in Ring-Based Access Network Using RSOA-ONU
(2011-08-15)
Chow, C. W.
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Yeh, C. H.
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Wu, Y. F.
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Lin, Y. H.
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Shih, F. Y.
We propose and demonstrate a Rayleigh backscattering (RB) interferometric beat noise circumvention architecture for the ring-based wavelength-division-multiplexed (WDM) access networks. RB can be significantly avoided since the RB and the upstream signal are traveling in opposite directions. We also analyze the performance of the proposed scheme for upgrading to 40 Gb/s and the influence of wavelength-drift at the remote node (RN).
Robust level coincidences in the subband structure of quasi-2D systems
(2012-12-01)
Winkler, R.
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Wang, L. Y.
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Lin, Y. H.
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Chu, C. S.
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電子物理學系
Recently, level crossings in the energy bands of crystals have been identified as a key signature for topological phase transitions. Using realistic models we show that the parameter space controlling the occurrence of level coincidences in energy bands has a much richer structure than anticipated previously. In particular, we identify robust level coincidences that cannot be removed by a small perturbation of the Hamiltonian compatible with the crystal symmetry. Different topological phases that are insulating in the bulk are then separated by a gapless (metallic) phase. We consider HgTe/CdTe quantum wells as a specific example. (c) 2012 Elsevier Ltd. All rights reserved.
Signal Generation and Transmission of 13-Gb/s OFDM Signal using RSOA in Carrier Distribution WDM-PON
(2012)
Chow, C. W.
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Yeh, C. H.
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Lin, Y. H.
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Liu, Y.
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光電工程學系
We demonstrate the 20-km transmission of 13-Gb/s orthogonal-frequency-division-multiplexed (OFDM) signal generated by using a 1.2-Ghz bandwidth reflective-semiconductor-optical-amplifier (RSOA) based optical-networking-unit (ONU). The bit-error-rate (BER) performance is within the forward-error-correction (FEC) threshold.
Stable wavelength-tuning laser in single-frequency by optical-injected Fabry-Perot laser diode and RSOA for long fiber distance propagation
(2012-01-01)
Yeh, C. H.
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Chow, C. W.
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Wu, Y. F.
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Lu, S. S.
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Lin, Y. H.
In this demonstration, we propose and experimentally investigate a stable wavelength-tuning laser configuration by using self-seeded Fabry-Perot laser diode (FP-LD) and external-injected reflective semi-conductor optical amplifier (RSOA). Here, this proposed laser can be tuned in the wavelength range of 1534.05 to 1553.00 nm with a 1.1 nm tuning-step. And the output powers and side-mode suppression ratios (SMSRs) are measured at -5.3 to 4.6 dBm and 31.2 to 50.1 dB/0.05 nm, respectively. And, the proposed laser also can be directly modulated at 2.5 Gb/s on-off keying (OOK) modulation format and propagates 75 km single-mode fiber (SMF) with no optical amplifier and dispersion compensation.
Technology roadmaps on the ballistic transport in strain engineered nanoscale CMOS devices
(2007)
Chung, Steve S.
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Tsai, Y. J.
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Tsai, C. H.
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Liu, P. W.
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Lin, Y. H.
As device channel length continues to scale beyond 90nm, carrier transport in the ballistic regime becomes critically important. In this paper, the strain engineering and its correlation to the ION current enhancement of CMOS devices in the ballistic regime has been examined. It was characterized by two parameters, the ballistic transport efficiency and the injection velocity. Experimental verifications on very high mobility n- and p-MOSFET channel/substrate orientations with various strains have been made. For nMOSFETs, it shows that uniaxial tensile-stress using CESL is more efficient in current enhancement than the biaxial stress with bulk strained-SiGe technique. For the pMOSFETs, compressive stress using uniaxial or biaxial has been evaluated for various structures. It was found that both ballistic efficiency and the injection velocity can be enhanced in a specific pMOS structure with appropriate combination of CESL and biaxial strain. The technology roadmaps have then been established from advanced 65nm CMOS devices. These results provide a guideline for designing high performance strained technology for CMOS devices in the sub-100nm regime.