Browsing by Author "Lin, Y. M."

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65-nm 160-GHz f(T) RF n-MOSFET intrinsic noise extraction and modeling using lossy substrate de-embedding method
(2006-01-01)
Guo, J. C.
;
Lin, Y. M.
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A lossy substrate model for accurate simulation of extrinsic noise and a lossy substrate de-embedding method for precise extraction of intrinsic noise have been proven by 80 nm, super-100 GHz f(T) RF nMOS. The method is further applied to 65 nm 160-GHz f(T) nMOS to investigate aggressive gate length scaling effect on RF noise. The extrinsic noise reveals abnormally weak dependence on gate length scaling even with 50 similar to 60% improvement on fT but strong dependence on finger number. The intrinsic noise extracted through lossy substrate de-embedding can consistently reflect the gain in f(T) and weak dependence on finger number. The NFmin at 10 GHz can be suppressed to 0.5dB for 65 nm nMOS corresponding to an optimized drain current, which is around 0.2 dB improvement over 80 nm devices. Noise suppression due to gate length scaling becomes even more significant in higher current region. The noise reduction is attributed to lower noise resistance (R.) and real part of optimum source admittance (Re(Y-opt)). The accurate extraction of intrinsic noise provides useful guideline for RF CMOS device design and optimization in terms of speed, power, and noise.
65-nm 160-GHz f(T) RF n-MOSFET intrinsic noise extraction and modeling using lossy substrate de-embedding method
(2006)
Guo, J. C.
;
Lin, Y. M.
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A lossy substrate model for accurate simulation of extrinsic noise and a lossy substrate de-embedding method for precise extraction of intrinsic noise have been proven by 80 nm, super-100 GHz f(T) RF nMOS. The method is further applied to 65 nm 160-GHz f(T) nMOS to investigate aggressive gate length scaling effect on P.F noise. The extrinsic noise reveals abnormally weak dependence on gate length scaling even with 50 similar to 60% improvement on f(T) but strong dependence on finger number. The intrinsic noise extracted through lossy substrate de-embedding can consistently reflect the gain in fT and weak dependence on finger number. The NFmin at 10 GHz can be suppressed to 0.5dB for 65 nm nMOS corresponding to an optimized drain current, which is around 0.2 dB improvement over 80 nm devices. Noise suppression due to gate length scaling becomes even more significant in higher current region. The noise reduction is attributed to lower noise resistance (R-n) and real part of optimum source admittance (Re(Y-opt)). The accurate extraction of intrinsic noise provides useful guideline for RF CMOS device design and optimization in terms of speed, power, and noise.
Compositional grading in GaAsSb grown on GaAs substrates
(2014-09-15)
Lin, Y. M.
;
Chen, C. H.
;
Wu, J. S.
;
Lee, C. P.
;
電子工程學系及電子研究所
The composition profile and lattice strain of GaAsSb grown on GaAs substrates by molecular beam epitaxy have been investigated using the Rutherford backscattering spectrometry (RBS) and X-ray reciprocal space mapping. Through RBS, we found that the Sb content in the layer increases from the interface to the top surface. The X-ray reciprocal space mapping shows that the GaAsSb lattice also gradually relaxes as the layer becomes thicker. The behavior of composition grading and gradual lattice relaxation is quite different from those of III-V ternary compounds with two group Ill atoms. (C) 2014 Elsevier B.V. All rights reserved.
Compositional grading in GaAsSb grown on GaAs substrates
(2014-09-15)
Lin, Y. M.
;
Chen, C. H.
;
Wu, J. S.
;
Lee, C. P.
;
電子工程學系及電子研究所
The composition profile and lattice strain of GaAsSb grown on GaAs substrates by molecular beam epitaxy have been investigated using the Rutherford backscattering spectrometry (RBS) and X-ray reciprocal space mapping. Through RBS, we found that the Sb content in the layer increases from the interface to the top surface. The X-ray reciprocal space mapping shows that the GaAsSb lattice also gradually relaxes as the layer becomes thicker. The behavior of composition grading and gradual lattice relaxation is quite different from those of III-V ternary compounds with two group Ill atoms. (C) 2014 Elsevier B.V. All rights reserved.
Demonstration of High Spectral Efficient OFDM-QAM Long Reach Passive Optical Network
(2008)
Chow, C. W.
;
Yeh, C. H.
;
Wang, C. H.
;
Shih, F. Y.
;
Lin, Y. M.
We demonstrate a high spectral-efficient LR-PON using 4Gb/s OFDM-QAM for both up-and-downstream, achieving a high split-ratio 256, using optical components optimized for GPON.
Effect of interfacial layer on the crystal structure of InAs/AlAs0.16Sb0.84/AlSb quantum wells
(2014-04-28)
Lin, Y. M.
;
Chen, C. H.
;
Lee, C. P.
;
電子工程學系及電子研究所
;
奈米科技中心
Ion channeling technique using MeV C2+ ions and high resolution X-ray diffraction were used to study the crystal quality of an InAs/AlSb-based quantum wells. We found that the InAs quality has a strong dependence on the type of the interface used. With the addition of the InSb-like interface, the crystal quality of the InAs channel was greatly improved. The InAs lattice was fully strained and aligned with the lattice of the buffer layer without any lattice relaxation. On the other hand, if the interface was of the AlAs type, the lattice of the InAs quantum well was relaxed and the crystal quality was poor. This explains why a superior InAs quantum well with high electron mobility and good surface morphology can be achieved with the use of the InSb interface. (C) 2014 AIP Publishing LLC.
Insulating state to quantum Hall-like state transition in a spin-orbit-coupled two-dimensional electron system
(2014-07-07)
Lo, Shun-Tsung
;
Hsu, Chang-Shun
;
Lin, Y. M.
;
Lin, S-D
;
Lee, C. P.
We study interference and interactions in an InAs/InAsSb two-dimensional electron system. In such a system, spin-orbit interactions are shown to be strong, which result in weak antilocalization (WAL) and thereby positive magnetoresistance around zero magnetic field. After suppressing WAL by the magnetic field, we demonstrate that classical positive magnetoresistance due to spin-orbit coupling plays a role. With further increasing the magnetic field, the system undergoes a direct insulator-quantum Hall transition. By analyzing the magnetotransport behavior in different field regions, we show that both electron-electron interactions and spin-related effects are essential in understanding the observed direct transition. (C) 2014 AIP Publishing LLC.