Browsing by Author "Lin, YH"

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2-bit poly-Si-TFT nonvolatile memory using hafnium oxide, hafnium silicate and zirconium silicate
(2005)
Lin, YH
;
Chien, CH
;
Chou, TH
;
Chao, TS
;
Chang, CY
In this paper, we, for the first time, have successfully fabricated SONOS-type poly-Si-TFT memories employing three kinds of high-k dielectrics, including HfO(2), Hf-silicate and Zr-silicate, as the trapping layer with low-thermal budget processing. It was demonstrated that the fabricated memories exhibit good performance in terms of relatively large memory window, high program/erase speed (1ms/10ms), long retention time (> 10(6)S for 20% charge loss) and negligible read/write disturbances. In particular, 2-bit operation has been successfully demonstrated.
A total standard WIP estimation method for wafer fabrication
(2001-05-16)
Lin, YH
;
Lee, CE
;
工業工程與管理學系
;
Department of Industrial Engineering and Management
The standard work-in-process (WIP) level in a wafer fabrication factory is an important parameter which can be properly used to trigger the decision of when to release specific wafer lots. There are many WIP-based release control policies which have been proven to be effective for wafer fabrication manufacturing, few methods have been proposed to find the suitable WIP-level as a parameter for these release policies. This paper proposes a queueing network-based algorithm to determine the total standard WIP level so that the Fixed-WIP release algorithm to determine the total standard WIP level so that the Fixed-WIP release control policy can apply. A numerical example is provided to elaborate the algorithm. A simulation model of a real-world wafer fabrication factory in Taiwan is built and analyzed. Results of simulation experiment indicate that under the Fixed-WIP control policy, the total standard WIP level estimated from this study achieves a target throughput rate while keeping the corresponding cycle time relatively low. Results also demonstrate that the queueing network-based algorithm is a very useful method to determine the standard WIP level efficiently. (C) 2001 Elsevier Science B.V. All rights reserved.
A WIP estimation model for wafer fabrication
(2002-09-01)
Lin, YH
;
Lee, CE
;
工業工程與管理學系
;
Department of Industrial Engineering and Management
The standard WIP (work-in-process) level in wafer fabrication is an important parameter which can be used to diminish system disturbances. This parameter can also be used to trigger the decisions of when to release particular wafer lots and how to dispatch them. This paper not only explores the significance of standard WIP in wafer fabrication, but also presents a method, based on the reorder point (ROP) model, to estimate the standard WIP level in front of each workstation. A numerical example illustrates the method's effectiveness. Also, a simulation model of a real-world wafer fabrication factory in Taiwan is constructed and the wafer input control rule, Fixed-WIP, is applied. Results of a single factor experimental design indicate that the standard WIP level estimated in this study achieves a short mean cycle time and an acceptably high mean throughput rate. The phenomenon, occurring throughout this study, in which a lower WIP level does not guarantee a shorter average cycle time in wafer fabrication, is also explored. Results presented herein demonstrate that the ROP-based WIP estimation method is a highly efficient method in deter-mining a safe and reliable standard WIP level during wafer fabrication.
All-optical data format conversion in synchronously modulated single-mode Fabry-Perot laser diode using external injection-locking-induced nonlinear threshold reduction effect
(2005-06-01)
Lin, GR
;
Chang, YC
;
Lin, YH
;
Chen, JH
;
光電工程學系
High-speed all-optical data-format conversion and logic gate from a synchronously modulated Fabry-Wrot laser diode (FPLD) below threshold condition is demonstrated by using external injection-induced. nonlinear threshold reduction effect of the FPLD. A pulsed pseudoreturn-to-zero (PRZ) data with maximum extinction ratio of 14.5 dB is obtained by externally seeding the 9.953-Gb/s (OC-192) nonreturn-to-zero (NRZ) data stream to optically gain-switch the FPLD. At optimized radio frequency and optical injecting powers of 24 and 4 dBm, the root mean square timing jitter and the duty-cycle (pulsewidth) of the PRZ eye pattern are determined as 0.4 ps and 45% (44 ps), respectively. The bit-error rate (BER) can be as low as 10(-13) under the 4-dBm external injecting power. A 1.5-dB power penalty with the BER of < 10(-9) is measured at a bit rate of 9.953 Gb/s. Highest NRZ-to-PRZ conversion rate of 12.5 Gb/s is achieved by increasing biasing current of the FPLD.
All-optical NRZ-to-PRZ format transformer with an injection-locked Fabry-Perot laser diode at unlasing condition
(2004-09-20)
Chang, YC
;
Lin, YH
;
Chen, JH
;
Lin, GR
;
光電工程學系
By using an optical nonreturn-to-zero (NRZ) format data-stream to injection-lock an synchronously modulated Fabry-Perot laser diode at below threshold condition (without DC driving current), an output data-stream with pseudo-return-to-zero (PRZ) format can be generated at bit rate of up to 2.488 Gbit/s. Such an NRZ-to-PRZ format transformation is due to the injection-locking induced gain-switching of the FPLD with the incoming NRZ data. The PRZ data-stream with a maximum on/off extinction ratio of 12.2 dB is obtained under the optical injecting power of -2 dBm and the RF driving power of 24.4 dBm. The best side-mode suppression ratio of 40 dB and the lowest timing jitter of 0.4 ps for the PRZ data-stream are observed. A power penalty of 1.2 dB is measured at a bit-error rate of 10(-9) after NRZ-to-PRZ transformation. In application, the demonstration of an all-optical OR logic gate using the FPLD-based NRZ-to-PRZ transformer is also reported. (C) 2004 Optical Society of America.
Anaphora resolution for biomedical literature by exploiting multiple resources
(2005)
Liang, T
;
Lin, YH
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資訊工程學系
;
Department of Computer Science
In this paper, a resolution system is presented to tackle nominal and pronominal anaphora in biomedical literature by using rich set of syntactic and semantic features. Unlike previous researches, the verification of semantic association between anaphors and their antecedents is facilitated by exploiting more outer resources, including UMLS, WordNet, GENIA Corpus 3.02p and PubMed. Moreover, the resolution is implemented with a genetic algorithm on its feature selection. Experimental results on different biomedical corpora showed that such approach could achieve promising results on resolving the two common types of anaphora.
Annealing temperature effect on the performance of nonvolatile HfO2Si-oxide-nitride-oxide-silicon-type flash memory
(2006-05-01)
Lin, YH
;
Chien, CH
;
Chang, CY
;
Lei, TF
;
電子工程學系及電子研究所
In this article, we demonstrate the effect of the postdeposition annealing for the HfO2 trapping layer on the performance of the Si-oxide-nitride-oxide-silicon-type flash memories. It was found that the memory window becomes larger while the retention and endurance characteristics get worse as the annealing temperature increases. This was ascribed to the larger amount and the shallower energy levels of the crystallization-induced traps as compared to the traps presented in the as-fabricated HfO2 film. Finally, in the aspect of disturbances, we show only insignificant read, drain, and gate disturbances presented in the three samples in the normal operation. (c) 2006 American Vacuum Society.
Brownian dynamics simulations of the effects of hydrodynamic interactions on the polymer viscoelastic behavior
(2003-04-01)
Yang, DJ
;
Lin, YH
;
應用化學系
;
Department of Applied Chemistry
Brownian dynamics simulation is used to investigate the viscoelastic response of the Gaussian chain to a step shear deformation in both the linear and non-linear regions under the influence of hydrodynamic interactions. Both the preaveraged Oseen tensor and the Rotne-Prager tensor are used in the study. In the former case, the simulation results are shown to be in agreement with the expected results calculated using the eigenvalues of the normal modes of motion obtained numerically. It is shown that an initial state with zero second normal-stress difference is generated by the step shear deformation. The subsequent rise of the second normal-stress difference as revealed by the simulation is shown mainly arising from the coupling of the recoil of the stretched bond in the direction of deformation and the anisotropy in the hydrodynamic interaction created by the step deformation. (C) 2003 Elsevier Science Ltd. All rights reserved.
Chain dynamics of concentrated polystyrene solutions studied by depolarized photon-correlation and viscosity measurements
(1999-05-08)
Lai, CS
;
Juang, JH
;
Lin, YH
;
應用化學系
;
Department of Applied Chemistry
Concentrated solutions of nearly monodisperse polystyrene samples in cyclohexane in the theta condition and in the entanglement-free region have been studied by means of the depolarized photon-correlation spectroscopy and viscosity measurements. It is shown that the viscoelastic behavior of the studied systems is described by the Rouse theory and that in agreement with the theoretical analysis the main polymer dynamic process probed by the depolarized Rayleigh scattering is basically the reorientational motion associated with a Rouse segment of the polymer chain, whose relaxation is independent of the scattering angle and the molecular weight. In addition to the main dynamic process, the tail region of a very fast process associated with the sub-Rouse-segmental motions can be observed, whose existence is expected from the theoretical analysis. (C) 1999 American Institute of Physics. [S0021-9606(99)51817-5].
Correlation of stress-induced leakage current with generated positive trapped charges for ultrathin gate oxide
(1998-02-01)
Lin, YH
;
Lee, CL
;
Lei, TF
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
In this work, the evidence of the stress-induced leakage current related with the stress-generated positive trapped charges is presented and investigated. It is shown that the centroid of the positive trapped charges, which depends on the polarity of the stress current, affects the magnitude of the leakage current. And the trapping density of positive charges, which is determined by the final stress applied on the oxide, determines the final level of the leakage currents.
Correlation of stress-induced leakage current with generated positive trapped charges for ultrathin gate oxide
(1998-02-01)
Lin, YH
;
Lee, CL
;
Lei, TF
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
In this work, the evidence of the stress-induced leakage current related with the stress-generated positive trapped charges is presented and investigated. It is shown that the centroid of the positive trapped charges, which depends on the polarity of the stress current, affects the magnitude of the leakage current. And the trapping density of positive charges, which is determined by the final stress applied on the oxide, determines the final level of the leakage currents.
Cu contamination effect in oxynitride gate dielectrics
(2001-11-01)
Lin, YH
;
Pan, FM
;
Liao, YC
;
Chen, YC
;
Hsieh, IJ
We have studied the effect of Cu contamination in oxynitride gate dielectrics. Compared to thermal SiO2 with a physical thickness of 3-5 nm, the oxynitride shows a much improved Cu contamination resistance. Furthermore, the Cu contamination resistance increases with increasing nitrogen content. The mechanism of improved gate dielectric resistance to Cu is due to the strong diffusion barrier properties of oxynitride as observed by secondary ion mass spectroscopy. (C) 2001 The Electrochemical Society.
Direct observation of long-term durability of superconductivity in YBa2Cu3O7-Ag2O composites
(2003-10-01)
Lin, JJ
;
Lin, YH
;
Huang, SM
;
Lee, TC
;
Chen, TM
We report direct observation of long-term durability of superconductivity of several YBa2Cu3O7-Ag2O composites that were first prepared and studied almost fourteen years ago [J. J. Lin et al.: Jpn. J. Appl. Phys. 29 (1990) 497]. Remeasurements performed recently on both resistances and magnetizations indicate a sharp critical transition temperature at 91 K. We also find that such long-term environmental stability of high-temperature superconductivity can only be achieved in YBa2Cu3O7 with Ag2O addition, but not with pure Ag addition.
Dynamics of a ''Rouse'' segment as probed by depolarized photon-correlation and viscoelasticity measurements
(1996-07-15)
Lin, YH
;
Lai, CS
;
交大名義發表
;
應用化學系
;
National Chiao Tung University
A polystyrene melt, whose molecular weight (weight-average molecular weight = 1050) is about that estimated for a Rouse segment;, has been studied with depolarized photon-correlation and viscosity measurements. Theoretically the dynamic depolarized light scattering is shown to be affected by the reorientational motion of the whole polymer molecule in the long-time region and the local segmental motions in the short-time region. The elastic dumbbell model is used to describe the viscoelasticity and reorientational motion of the polymer molecule. Relaxation times [tau] and tau(v) are extracted from the depolarized light scattering and viscosity measurement results, respectively. The ratio tau(v)/[tau], being independent of temperature as expected, is of the order of magnitude predicted from the theoretical analysis. We come to a similar conclusion supporting the above results by analyzing the depolarized photon-correlation results and the viscoelastic relaxation data in the glass-rubber transition zone of entangled polystyrene melts, which are available in literature.
High performance multi-bit nonvolatile HfO2 nanocrystal memory using spinodal phase separation of hafnium silicate
(2004)
Lin, YH
;
Chien, CH
;
Lin, CT
;
Chen, CW
;
Chang, CY
In this paper, we exploit a novel technique for preparing high density HfO2 nanocrystals with an average size < 10nm using spinodal phase separation of Hf-silicate thin film by 900degreesC rapid thermal annealing for nonvolatile memories. The density can be as high as 0.9similar to1.9x10(12)cm(-2). Owing to the fact that HfO2 nanocrystals are well embedded inside SiO2 matrix and their sufficiently deep energy level, we, for the first time, have demonstrated superior characteristics of the nanocrystal memory in terms of considerably large memory window, high speed program/erase (1mus/0.1ms), long retention time greater than 10(8)s for 10% charge loss, excellent endurance after 10(6) P/E cycles, negligible read/write disturbances and multi-bit operation.
High-perfomance nonvolatile HfO2 nanocrystal memory
(2005-03-01)
Lin, YH
;
Chien, CH
;
Lin, CT
;
Chang, CY
;
Lei, TF
In this letter, we demonstrate high-performance nonvolatile HfO2 nanocrystal memory utilizing spinodal phase separation of Hf-silicate thin film by 900 degreesC rapid thermal annealing. With this technique. a remarkably high nanocrystal density of as high as 0.9 similar to 1.9 X 10(12) cm(-2) with an average size < 10 nm can be easily achieved. Because HfO2 nanocrystals are well embedded inside an SiO2-rich matrix and due to their sufficiently deep energy level, we, for the first time, have demonstrated superior characteristics of the nanocrystal memories in terms of a considerably large memory window, high-speed program/erase (P/E) (1 mus/0.1 ms), long retention time greater than 10(8) s for 10 % charge loss, and excellent endurance after 10(6) P/E cycles.
Low temperature electrical transport properties of RuO2 and IrO2 single crystals
(2004-11-17)
Lin, JJ
;
Huang, SM
;
Lin, YH
;
Lee, TC
;
Liu, H
We have systematically measured the electrical transport properties of several RuO2 and IrO2 single crystals over a wide temperature range from 300 K down to 0.3 K to study the conduction mechanisms in these oxides. Our measured resistivities are in close agreement with the recent band-theory calculations for these materials. The characteristic temperatures for the acoustic-mode and optical-mode phonons are determined. Our measured magnetoresistances are positive and follow the Kohler rule, indicating that the transport properties of these oxides exhibit normal behaviour as described by the Boltzmann equation. In contrast, we do not find any signature of superconductivity down to 0.3 K, though the band-theory calculations predict a superconducting transition temperature of similar to5 K. Magnetization measurements suggest a very low level of paramagnetic impurities in our crystals.
Mobility enhancement of MOSFETs on p-silicon (111) with in situ HF-Vapor. pre-gate oxide cleaning
(2004-09-01)
Chao, TS
;
Lin, YH
;
Yang, WL
;
電子物理學系
;
Department of Electrophysics
In this paper, we grow and characterize in detail native-oxide-free ultrathin gate oxide on silicon (111) by an advance clustered vertical furnace with in situ HF-vapor stripping of the native oxide. Excellent results are demonstrated. Gate oxide integrity is significantly improved in terms of time-to-breakdown, drain current, and transconductance. In-situ HF-vapor cleaning by a clustered vertical furnace appears to be very promising to grow high-quality native-oxide-free gate oxide on silicon (111).
Mode beating noise reduction of mutually injection-locked erbium-doped fiber laser and laser diode link
(2004-08-01)
Lin, YH
;
Lin, GR
;
光電工程學系
;
Department of Photonics
We report a mutually injection-locked Erbium-doped fiber amplifier (or laser) and Fabry-Perot laser diode link (EDFA-FPLD or EDFL-FPLD) for single longitudinal mode lasing with linewidth of 0.012 nm and sidemode suppression ratio of 42 dB. The 3-dB linewidths of < 20 MHz and 350 kHz for the EDFL-FPLD and EDFA-FPLD links, respectively, are reported using interferometric determination., The mode-beating noise can be completely eliminated in the EDFA-FPLD link.
Monitoring trapped charge generation for gate oxide under stress
(1997-09-01)
Lin, YH
;
Lee, CL
;
Lei, TF
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A measurement method to extract the respective quantities and centroids of positive and negative trapped charges, i.e., Q(p) and Q(n), generated by the negative current stress for gate oxides is proposed and demonstrated, The method is based on neutralization of Q(p) by a low positive current stress to differentiate the effects of Q(p) and Q(n). From the extracted quantities and centroids of Q(p) and Q(n) of negatively stressed oxides, it was found that Q(p) and Q(n) are generated near the oxide/substrate interface and Q(p) is initially much larger than Q(n). After the continuous stressing, Q(p) saturates and moves closer to the interface, but Q(n) keeps increasing and moves away from the interface, especially for those oxides after the post-poly anneal (PPA) treatment, Q(n) is very unstable and easily neutralized, either by a small stress of opposite polarity or the same polarity, For the latter, Q(n) is mainly dependent on the level of the final stressing field.