Browsing by Author "Lin, Yi-Chen"

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A 9-GHz Dual-Modulus 0.18-mu m CMOS Prescaler Using HLO-FF Technique
(2008)
Wei, Hung-Ju
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Meng, Chinchun
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Lin, Yi-Chen
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Huang, Guo-Wei
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電信工程研究所
A fully single-ended GaInP/GaAs HBT micromixer using an integrated active LO balun
(2008-07-01)
Wu, Tzung-Han
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Lin, Yi-Chen
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Meng, Chinchun
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Wu, Tse-Hung
;
Wei, Hung-Ju
A Gilbert micromixer is demonstrated in this paper using GaInP/GaAS HBT technology. By using an on-chip active LO balun, the micromixer with the single-ended RF, LO, and IF ports is suitable for hybrid RF system applications. The port-to-port isolation has its best performance when the LO signal is balanced. The fully matched high-linearity micromixer has the conversion gain of 12dB, IP1dB of -9 dBm, IIP3 of 1 dBm when f(IF(input)) = 300 MHz, f(LO) = 3.5 GHz, and f(RF(output)) = 3.8 GHz. (C) 2008 Wiley Periodicals, Inc.
A High-Speed HBT Prescaler Based on the Divide-by-Two Topology
(2007)
Wei, Hung-Ju
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Meng, Chinchun
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Chang, Yuwen
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Lin, Yi-Chen
;
Huang, Guo-Wei
This paper demonstrates the Divide-by4/5 prescalers with merged AND gates in 2 mu m GaInP/GaAs heterojunction bipolar transistor (HBT) and 035 mu m SiGe HBT technologies. By biasing the HBT near the peak transit-time frequency (f(tau)), the maximum operating frequency of a D-type flip-flop (D-FF) can be promoted. At the supply voltage of 5 V, the GaInP/GaAs prescaler operates from 30 MHz to 5.2 GHz, and the SiGe prescaler has the higher-speed performance of 1 GHz similar to 8 GHz at the cost of power consumption.
Characteristics of GaAs transformers for RFIC applications
(2008-11-01)
Meng, Chinchun
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Teng, Ya-Hui
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Syu, Jin-Siang
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Lin, Yi-Chen
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Jhong, Jhin-Ci
In this article, stacked transformers, coupling stacked transformers, interleave transformers, and symmetrical transformers on GaAs substrate are systematically studied. Two kinds of stacked transformer are under study. One has the symmetrical electric property while the other one has a better quality factor for the primary port. The stack transformers have achieved the highest coupling coefficient (similar to 0.9) at the cost of lower self-resonance frequency. The interleave transformers have the identical electrical properties for the primary and the secondary ports. However, the layout is incompatible with the differential operation. Oil the other hand, the symmetrical transformer is compatible with the differential operation (aid call have the center-tapped biasing option. The data established here provides a useful design library for the GaAs RFIC. (C) 2008 Wiley Periodicals, Inc.
Characteristics of Integrated RF Transformers on GaAs Substrate
(2007)
Meng, Chinchun
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Teng, Ya-Hui
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Lin, Yi-Chen
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Jhong, Jhin-Ci
;
Yen, Ying-Chieh
Stacked transformers, coupling stacked transformers, interleave transformers and symmetrical transformers on GaAs substrate are systematically studied in this paper. Two kinds stacked transformer are under study. One has the symmetrical electric property while the other one has a better quality factor for the primary port. The stack transformers have achieved the highest coupling coefficient (similar to 0.9) at the cost of lower self-resonance frequency. The interleave transformers have the identical electric properties for the primary and the secondary ports. However, the layout is incompatible with the differential operation. On the other hand, the symmetrical transformer is compatible with the differential operation and can have the center-tapped biasing option. The data established here provide a useful design library for the GaAs RFIC.
Compact GaInP/GaAs HBT Gilbert Mixers With On-Chip Active LO Balun
(2007)
Wu, Tzung-Han
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Lin, Yi-Chen
;
Meng, Chinchun
;
Wu, Tse-Hung
;
Wei, Hung-Ju
A Gilbert micromixer is demonstrated in this paper using GaInP/GaAs HBT technology. The RF, LO, and IF ports of the micromixer are all single-ended using the on-chip active LO balun. The port-to-port isolation has its best performance when the LO signal is balanced. The stand-along micromixer is suitable for hybrid RF system applications. The fully matched high linearity micromixer has the conversion gain of 12 dB, IP(1dB) of -9 dBm, IIP(3) of 1 dBm when input IF=300 MHz, LO=3.5 GHz and output RF=3.8 GHz.
High-speed divide-by-4/5 prescalers with merged and gates using gainp/gaas hbt and sige hbt technolmes
(2008-06-01)
Wei, Hung-Ju
;
Meng, Chinchun
;
Chang, YuWen
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Lin, Yi-Chen
;
Huan, Guo-Wei
This paper demonstrates the divide-by-4/5 prescalers with merged AND gates in 2-mu m GaInP/GaAs heterojunction bipolar transistor (HBT) and 0.35-mu m SiGe HBT technologies. By biasing the HBT near the peak transit-time frequency (f(T)), the maxinnun operating frequency of a D-type flip-flop can be promoted. At the supply, voltage of 5 the GaInP/GaAs prescaler operates from 30 MHz to 5.2 GHz, and the SiGe prescaler has the higher-speed performance of 1-8 GHz at the cost of power consumption. (c) 2008 Wiley Periodicals, Inc.
Multioutputs single-stage gate driver on array with wide temperature operable thin-film-transistor liquid-crystal display for high resolution application
(2019-01-01)
Liu, Po-Tsun
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Zheng, Guang-Ting
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Lin, Yi-Chen
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光電工程學系
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顯示科技研究所
A hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) gate driver with multioutputs (eight outputs per stage) for high reliability, 10.7-inch automotive display has been proposed. The driver circuit is composed of one SR controller, eight driving TFTs (one stage to eight outputs) with bridging TFTs. The SR controller, which starts up the driving TFTs, could also prevent the noise of gate line for nonworking period. The bridging TFT, using width decreasing which connects between the SR controller and the driving TFT, could produce the floating state which is beneficial to couple the gate voltage, improves the driving ability of output, and reaches consistent rising time in high temperature and low temperature environment. Moreover, 8-phase clocks with 75% overlapping and dual-side driving scheme are also used in the circuit design to ensure enough charging time and reduce the loading of each gate line. According to lifetime test results, the proposed gate driver of 720 stages pass the extreme temperature range test (90 degrees C and -40 degrees C) for simulation, and operates stably over 800 hours at 90 degrees C for measurement. Besides, this design is successfully demonstrated in a 10.7-inch full HD (1080 x RGBx1920) TFT-liquid-crystal display (LCD) panel.
Neural correlates of merging number words
(2015-11-15)
Hung, Yi-Hui
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Pallier, Christophe
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Dehaene, Stanislas
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Lin, Yi-Chen
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Chang, Acer
Complex number words (e.g., "twenty two") are formed by merging together several simple number words (e.g., "twenty" and "two"). In the present study, we explored the neural correlates of this operation and investigated to what extent it engages brain areas involved processing numerical quantity and linguistic syntactic structure. Participants speaking two typologically distinct languages, French and Chinese, were required to read aloud sequences of simple number words while their cerebral activity was recorded by functional magnetic resonance imaging. Each number word could either be merged with the previous ones (e.g., 'twenty three') or not (e.g., 'three twenty'), thus forming four levels ranging from lists of number words to complex numerals. When a number word could be merged with the preceding ones, it was named faster than when it could not. Neuroimaging results showed that the number of merges correlated with activation in the left inferior frontal gyrus and in the left inferior parietal lobule. Consistent findings across Chinese and French participants suggest that these regions serve as the neural bases for forming complex number words in different languages. (C) 2015 Elsevier Inc. All rights reserved.
Programmable-Gain Constant-IF-Bandwidth SiGe BiCMOS Upconversion Micromixer at 2.4/5.8 GHz Using Current-Mode Approach
(2017-01-01)
Syu, Jin-Siang
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Chang, Wei-Ling
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Meng, Chinchun
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Lin, Yi-Chen
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Huang, Guo-Wei
A 2.4/5.8-GHz dual-band programmable-gain upconverter with a constant IF bandwidth is demonstrated using 0.35-mu m SiGe BiCMOS technology. Using a current-mode design approach, the input IF bandwidth remains the same at different gain settings. A dual-band LC current combiner is used at the mixer RF output to combine differential signals to a single-ended one at two bands. Then, a wideband amplifier is cascaded after the dual-band mixer. The demonstrated upconverter achieves maximum gain of -4/-3 dB at 2.4/5.8 GHz, respectively. In addition, four gain steps with 5-dB gain difference between each step are controlled by a two-bit digital circuit. The total current consumption is 26 mA at a 4-V supply.